BCR5AS-12 Triac Medium Power Use REJ03G0289-0200 Rev.2.00 Nov.08.2004 Features * IT(RMS) : 5 A * VDRM : 600 V * IFGT I, IRGT I, IRGT III : 30 mA * Non-Insulated Type * Planar Passivation Type Outline MP-3A 4 2, 4 3 12 3 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 Applications Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of household equipment such as washing machine, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Nov.08.2004, page 1 of 6 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V BCR5AS-12 Symbol Ratings Unit RMS on-state current Parameter IT(RMS) 5 A Commercial frequency, sine full wave Note3 360 conduction, Tc = 103C Surge on-state current ITSM 50 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2 t 10.4 A2s PGM PG(AV) VGM IGM Tj Tstg -- 3 0.3 10 2 - 40 to +125 - 40 to +125 0.26 W W V A C C g Symbol IDRM VTM Min. -- -- Typ. -- -- Max. 2.0 1.8 Unit mA V VFGT I VRGT I VRGT III IFGT I IRGT I IRGT III VGD Rth(j-c) -- -- -- -- -- -- 0.2 -- -- -- -- -- -- -- -- -- 1.5 1.5 1.5 30 30 30 -- 3.0 V V V mA mA mA V C/W Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 5 -- -- V/s Tj = 125C I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 I II III I II III Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 7 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 tab. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = -2.5 A/ms 3. Peak off-state voltage VD = 400 V Rev.2.00, Nov.08.2004, page 2 of 6 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR5AS-12 Performance Curves 102 7 5 3 2 Tj = 125C 100 7 5 3 2 Tj = 25C 10-1 0.6 1.4 2.2 3.0 3.8 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 80 70 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 102 7 5 3 2 VGM = 10V 101 7 5 3 VGT = 1.5V 2 PGM = 3W PG(AV) =0.3W IGM = 2A IFGT I IRGT I IRGT III VGD = 0.2V 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 103 7 5 4 3 2 Typical Example IRGT III IRGT I 102 IFGT I 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Rev.2.00, 90 0 100 4.6 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Voltage (V) Surge On-State Current (A) 100 101 7 5 3 2 100 7 5 3 2 Rated Surge On-State Current Nov.08.2004, page 3 of 6 Transient Thermal Impedance (C/W) On-State Current (A) Maximum On-State Characteristics 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR5AS-12 Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 Curves apply regardless 140 of conduction angle 6 360 Conduction Resistive, 5 inductive loads 4 3 2 1 0 0 1 2 3 4 5 6 7 8 100 80 60 40 360 Conduction 20 Resistive, inductive loads 0 0 1 3 4 2 7 8 Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 120 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 102 7 5 4 3 2 Latching Current vs. Junction Temperature Typical Example 101 7 5 4 3 2 100 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Nov.08.2004, page 4 of 6 Latching Current (mA) VD = 12V Distribution 0 20 40 60 80 100 120 140 Junction Temperature (C) Holding Current vs. Junction Temperature Holding Current (mA) 6 Allowable Ambient Temperature vs. RMS On-State Current RMS On-State Current (A) Rev.2.00, 5 RMS On-State Current (A) 140 0 120 RMS On-State Current (A) 160 Ambient Temperature (C) Case Temperature (C) 7 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) On-State Power Dissipation (W) 8 103 7 5 3 2 T2+, G+ Typical Example T2-, G- Distribution 102 7 5 3 2 T2+, G- Typical Example 101 7 5 3 2 100 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) BCR5AS-12 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 7 5 4 3 2 0 20 40 60 80 100120 140 Typical Example Tj = 125C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width 101 Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant Minimum Characteristics Value III Quadrant 100 7 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) 6 6 A 6V V Test Procedure I V A V 330 Test Procedure III Nov.08.2004, 330 Test Procedure II 6 6V A 6V 330 page 5 of 6 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 Typical Example IRGT III IRGT I IFGT I 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits Rev.2.00, 160 Rate of Rise of Off-State Voltage (V/s) Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 7 5 4 3 2 Breakover Voltage vs. Rate of Rise of Off-State Voltage Junction Temperature (C) Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Breakover Voltage vs. Junction Temperature BCR5AS-12 Package Dimensions MP-3A JEDEC Code Cu alloy 2.3 0.5 0.1 0.1 0.1 1.4 0.2 1 max 2.5 min 6.1 0.2 5.3 0.2 0.76 0.2 Lead Material 0.32 1 0.2 6.6 Mass (g) (reference value) 10.4 max EIAJ Package Code 0.76 0.5 0.2 2.30.2 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE 1 2.3 Symbol Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name +A - T +Direction (1 or 2) +3 75 Type name +A Plastic Magazine (Tube) Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.08.2004, page 6 of 6 Standard order code example BCR5AS-12A-T13 BCR5AS-12A Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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