Rev.2.00, Nov.08.2004, page 1 of 6
BCR5AS-12
Triac
Medium Power Use
REJ03G0289-0200
Rev.2.00
Nov.08.2004
Features
• IT(RMS) : 5 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 30 mA
• Non-Insulated Type
• Planar Passivation Type
Outline
2, 4
1
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
4. T
2
Terminal
MP-3A
13
2
4
Applications
Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of
household equipment such as washing machine, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 720 V
BCR5AS-12
Rev.2.00, Nov.08.2004, page 2 of 6
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT(RMS) 5 A
Commercial frequency, sine full wave
360° conduction, Tc = 103°CNote3
Surge on-state current ITSM 50 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 10.4 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 3 W
Average gate power dissipation PG(AV) 0.3 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 0.26 g Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125°C, VDRM applied
On-state voltage VTM — — 1.8 V
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
I VFGT I — — 1.5 V
II VRGT I — — 1.5 V
Gate trigger voltageNote2
III VRGT III — — 1.5 V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
I IFGT I — — 30 mA
II IRGT I — — 30 mA
Gate trigger currentNote2
III IRGT III — — 30 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
Thermal resistance Rth(j-c) — — 3.0 °C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 5 — — V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is meas ured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR5AS-12
Rev.2.00, Nov.08.2004, page 3 of 6
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
10
0
25710
1
40
20
310
2
425734
60
80
100
30
10
50
70
90
0
4.60.6 1.4 2.2 3.0 3.8
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
–60 –20
–40
10
0
2310
1
5710
2
23 5710
3
23 5710
4
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10–1
2310–1 5710
0
23 5710
1
23 5710
2
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
1
10
3
7
5
3
2
20
10
2
7
5
3
2
60 100 140
4
4
04080120
10
1
10
3
7
5
3
2
20
10
2
7
5
3
2
60 100 140
4
4
04080
120
–60 –20
–40
Tj = 25°C
Tj = 125°C
V
GM
= 10V
P
GM
= 3W
I
GM
= 2A
I
FGT I
I
RGT I
I
RGT III
V
GT
= 1.5V
P
G(AV)
=0.3W
V
GD
= 0.2V
Typical Example
I
RGT III
I
RGT I
I
FGT I
Typical Example
BCR5AS-12
Rev.2.00, Nov.08.2004, page 4 of 6
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
8
6
5
3
1
08
01357
2
4
7
246
160
120
100
60
20
08
013457
40
80
140
26
140400 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
160
120
100
60
20
01.6
0 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
–60 –20
–40
360° Conduction
Resistive,
inductive loads
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
Typical Example
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (mA)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
10
2
7
5
3
2
20
10
1
7
5
3
2
60 100 140
4
4
0 40 80 120
10
0
14020 60 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
04080120
–60 –20
–40 –60 –20
–40
V
D
= 12V
Distribution
Typical Example T
2
+, G–
Typical Example
T
2
+, G+
T
2
–, G–Typical Example
Distribution
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
BCR5AS-12
Rev.2.00, Nov.08.2004, page 5 of 6
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
160
100
80
40
20
0140
40
020 6080
140
100120
60
120
–
60
–
20
–
40
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
10
1
10
3
7
5
3
2
10
0
25710
1
10
2
7
5
3
2
35710
2
4
4
423
4
7
5
3
2
10
0
25710
1
10
1
7
7
5
3
2
310
2
4
4
425734
10
0
6Ω6Ω
6Ω
6V 6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Typical Example Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
III Quadrant
I Quadrant
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
Typical Example
I
RGT III
I
RGT I
I
FGT I
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Characteristics Test Circuits
BCR5AS-12
Rev.2.00, Nov.08.2004, page 6 of 6
Package Dimensions
MP-3A
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
0.32 Cu alloy
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
5.3 ± 0.2 0.5 ± 0.1
0.1 ± 0.1
0.5 ± 0.2
6.6 2.3
1.4 ± 0.2
2.3
10.4 max
1 max
2.5 min
0.76
1
0.76 ± 0.2
1 ± 0.2
6.1 ± 0.2
2.3
±
0.2
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard
packing Quantity Standard order code Standard order
code example
Surface-mounted type Taping 3000 Type name +A – T +Direction (1 or 2) +3 BCR5AS-12A-T13
Surface-mounted type Plastic Magazine
(Tube) 75 Type name +A BCR5AS-12A
Note : Please confirm the specificati on about the shipping in det ail.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
RENESAS SALES OFFICES
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0