IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description * Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. * Fully operational to 600V * 50V/ns dV/dt immunity * Gate drive power supply range: 10 - 35V * Undervoltage lockout for both output drivers * Separate Logic power supply range: 3.3V to VCL * Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes * Latch-Up protected over entire operating range * High peak output current: 6A * Low output impedance * Low power supply current * Immune to negative voltage transients The IX6R11 Bridge Driver for N-channel MOSFETs and IGBTs with a high side and low side output, whose input signals reference the low side. The High Side driver can control a MOSFET or IGBT connected to a positive bus voltage up to 600V. The logic input stages are compatible with TTL or CMOS, have built-in hysteresis and are fully immune to latch up over the entire operating range. The IX6R11 can withstand dV/dt on the output side up to 50V/ns. Ordering Information The IX6R11 is available in the 14-Pin DIP, the 16-Pin SOIC, and the heat-sinkable 18-Pin SOIC CooltabTM packages. Applications * * * * * * Driving MOSFETs and IGBTs in half-bridge circuits High voltage, high side and low side drivers Motor Controls Switch Mode Power Supplies (SMPS) DC to DC Converters Class D Switching Amplifiers Part Number Package Type IX6R11P7 IX6R11S3 IX6R11S6 14-Pin DIP 16-Pin SOIC 18-Pin SOIC Warning: The IX6R11 is ESD Sensitive Precaution: when performing the High-Voltage tests, adequate safety precautions should be taken! *Operational voltage rating of 600V determined in a typical half-bridge circuit configuration (refer to Figure 10 and Figure 11). Operational voltage in other circuit configurations may vary. Figure 1. Typical Circuit Connection IX6R11S6 IX6R11S3 Up to 600V (c) 2007 IXYS CORPORATION All rights reserved DS99037G(10/07) IX6R11 Figure 2 - IX6R11 Functional Block Diagram VDD VCH Low to HIN HIN HIN VCH High OUT RST IN Gate Current Output HGO UVCC Detect DG HS HS Isolated High Side VCL VDD LIN VCL Low to High Side Delay Equalizer and Shutdown Gate Current Output Shutdown Logic ENB LGO UVCC Detect DG DG LS 1 LS Pin Description and Configuration FUNCTION DESCRIPTION Logic Supply Positive power supply for chip CMOS functions HS Input High side input signal, TTL or CMOS compatible; HGO in phase LS Input Low side input signal, TTL or CMOS compatible; LGO in phase Enable Chip enable, active low. When driven high, both outputs go low Ground Logic reference ground Supply Voltage High side power supply, referenced to HS Output High side driver output Return High side voltage return pin Supply Voltage Low side power supply, referenced to LS Output Low side driver output Ground Low side voltage return pin 16-PIN SOIC N/C HGO 7 9 VDD VCH 6 10 HIN HS 5 11 ENB N/C 4 12 LIN VCL 3 13 DG LS 2 14 NC LGO 1 IX6R11P7 8 Cooltab is a trademark of IXYS Corporation IXYS reserves the right to change limits, test conditions, and dimensions. 18-PIN SOIC w/CooltabTM IX6R11S6 14-PIN DIP IX6R11S3 SYMBOL VDD HIN LIN ENB DG VCH HGO HS VCL LGO LS IX6R11 Absolute Maximum Ratings Symbol Definition Min Max Units VCH High side floating supply voltage -0.3 +35 V VHS High side floating supply offset Voltage -200 +600 V VHGO High side floating output voltage VHS-0.3 VCH+0.3 V VCL Low side fixed supply voltage -0.3 35 V VLGO Low side output voltage -0.3 VCL+0.3 V VDD Logic supply voltage -0.3 VCL+0.3 V VDG Logic supply offset voltage VLS-3.8 VLS+3.8 V VIN Logic input voltage(HIN & LIN) VLS-0.3 VCL+0.3 V dVS/dt Allowable offset supply voltage transient PD Package power dissipation@ TA 25C 1.25 W PD Package power dissipation@ TC 25C 2.5 W RTHJA Thermal resistance, junction-to-ambient 100 K/W Recommended Operating Conditions Symbol Definition 50 V/ns Min Max Units VHS+10 VHS+20 V VCH High side floating supply absolute voltage VHS High side floating supply offset voltage -20 +600 V VHGO High side floating output voltage VHS VCH+20 V VCL Low side fixed supply voltage 10 20 V VLGO Low side output voltage 0 VCC V VDD Logic supply voltage VDG+3 VDG+VCL V VDG Logic supply offset voltage VLS-0.5 VLS+0.5 V VIN Logic input voltage(HIN, LIN, ENbar) VDG VDD V TA Ambient Temperature -40 125 o (c) 2007 IXYS CORPORATION All rights reserved C IX6R11 Dynamic Electrical Characteristics* VCL = VCH = VDD = +15V, Cload = 5nF, and VDG = VLS unless otherwise specified. The dynamic electrical characteristics are measured using Figure 7. Symbol Definition Test Conditions ton Turn-on propagation delay VHS= 0V 120 160 ns toff Turn-off propagation delay VHS= 600V 94 125 ns tenb Device not enable delay 110 140 ns tr Turn-on rise time 25 35 ns tf Turn-off fall time 17 25 ns tdm Delay matching, HS & LS turn-on/off 25 50 ns Static Electrical Characteristics Symbol Definition Test Conditions VINH Logic "1" input voltage, HIN, LIN, ENB VDD= VCL= 15V VINL Min Typ Max Units Min Typ Max Units 9.5 V Logic "0" input voltage, HIN, LIN, ENB VDD= VCL= 15V 0 6 V VHLGO // VHHGO High level output voltage, VCH-VHGO or VCL-VLGO IO= 0A 0.1 V VLLGO // VLHGO Low level output voltage, VHGO or VLGO IO= 0A 0.1 V IHL HS to LS bias current. VHS= VCH= 600V IQHS Quiescent VCH supply current VIN= 0V or VDD = 15V 1 3 mA IQLS Quiescent VCL supply current VIN= 0V or VDD = 15V 1 3 mA IQDD Quiescent VDD supply current VIN= 0V or VDD = 15V 15 30 A IIN+ Logic "1" input bias current VIN= VDD 20 40 A IIN- Logic "0" input voltage VIN= 0V 1 A VCHUV+ VCH supply undervoltage positive going threshold. 9.7 V VCHUV- VCH supply undervoltage negative going threshold. VCLUV+ VCL supply undervoltage positive going threshold VCLUV- A 170 7.5 8.6 7 8.2 9.4 V 7.4 8.5 9.6 V VCL supply undervoltage negative going threshold. 7 8.2 9.4 V IGO+ HS or LS Output high short circuit current; V 4 6 IGO- HS or LS Output low short circuit current; V = 15V, VIN= 15V, PW<10us GO = 0V, VIN=0V, PW<10us GO * These characteristics are guaranteed by design only. Tested on a sample basis. IXYS reserves the right to change limits, test conditions, and dimensions. -7 A -5 A IX6R11 ENB 50% HIN/LIN ENB tenb 10% LGO/HGO LGO/HGO Figure 3. INPUT/OUPUT Timing Diagram 50% Figure 4. ENABLE Waveform Definitions 50% 50% 50% HIN LIN HIN/LIN Input Signal tdon tr tf tdoff 90% 90% 90% tdm HGO 10% 10% HGO/LGO LGO 10% LGO HGO tdm Outgoing Signal Figure 5. Definitions of Switching Time Waveforms Figure 6. Definitions of Delay Matching Waveforms VCL=15V 0.1 uF 9 3 6 5 HIN ENB LIN 7 10 11 10 uF 0.1 uF CL HGO IX6R11 12 13 2 1 LGO CL VCH + VHS 10 uF (0 to 600V) 500V 400V Sa mp le Te ste d ~ 0 ~ 10 uF V++ Buss (V HS ) 600V for Op era ti 200kHz ~ on 500kHz 1MHz fPWM Figure 7. Switching Time Test Circuit (c) 2007 IXYS CORPORATION All rights reserved Figure 8. Device operating range: Buss voltage vs. Frequency Tested in typical circuit configuration (refer to Figure 10 & 11) IX6R11 + C2 10uF U1 IX6R11 VCH HGO HS VDD HIN ENB LIN DG LS U2 Vin 78L15 18V V1 LS VCL LGO LS L1 200uH C6 0.1uF HGO HS GND2 GND2 + C3 10uF D1 + C1 100uF/250V dVs/dt > 50V/ns GND1 3 2 HV 600V GND1 BATTERY OUTPUT MONITOR HV SCOPE PROBE 15V Vout GND 1 C5 0.1uF DSEI 12-10A HS 15V V3 C8 PULSE BNC 2 3 GND2 C9 10uF 0.1uF VCC 16 U3 HCPL-314J 1/2 14 VEE U2 2 OUT 15 Measure dV/dt (HV Scope Probe) Q1 D2 DSEI12-10A 1,8 6,7 IXDD414 4,5 10K GND3 IXFP4N100Q -600V GND3 Figure 9. Test circuit for allowable offset supply voltage transient. 1 VCH 11 1uF/35V MLCC 12 VOUTVOUT+ GND 3 NDY1215C 10uF/35V 10 Up to 400V VIN+ 1 2 1k VOUT- 15 VOUT+ 14 30 5.1 10 11 1uF/35V MLCC 12 10uF/35V 13 1k 14 1k 15 1k 16 17 18 IX6R11S6 VDD HIN ENB LIN HS NC NC VDD HIN ENB LIN DG LS VCH HGO HS NC NC LS VCL LGO LS IXCP 10M90S 1N5817 9 15 8 IXTH14N60P 7 6 18uH 0.1uF/1kV 5 4 5.1 1N5817 2 0.47uF 0.47uF 3 15 IXTH14N60P 1 10uF/35V 1uF/35V MLCC Figure 10. Test circuit for high frequency, 750kHz, operation. VDD, VCH, VCL = 15V IXYS reserves the right to change limits, test conditions, and dimensions. 20/5W 20/5W VCL IX6R11 1 VCH 11 1uF/35V MLCC 12 VOUTVOUT+ GND 3 NDY1215C 10uF/35V 10 Up to 600V VIN+ 1 2 1k VOUT- 15 VOUT+ 14 30 5.1 10 11 1uF/35V MLCC 12 10uF/35V 13 1k 14 1k 15 1k 16 17 18 IX6R11S6 VDD HIN ENB LIN HS NC NC VDD HIN ENB LIN DG LS VCH HGO HS NC NC LS VCL LGO LS 1N5817 9 8 15 36 IXTH14N60P 7 6 0.1uF/1kV 5 4 5.1 1N5817 3 2 36 15 1 VCL 10uF/35V 1uF/35V MLCC Figure 11. Test circuit for low frequency, 75kHz, operation. VDD, VCH, VCL = 15V (c) 2007 IXYS CORPORATION All rights reserved IXCP 10M90S IXTH14N60P IX6R11 225 175 Time - nanoseconds Time - nanoseconds 150 Max. toff 125 Typ. toff Max. ton 100 75 Typ. ton -25 0 25 50 75 100 175 125 Max. toff Typ. toff 150 Max. ton 125 Typ. ton 100 75 -50 50 -50 200 -25 50 75 100 125 Fig. 12b. High side turn-on and turn-off times vs. temperature. 190 150 180 140 Max. ton 170 Time - nanaseconds Time - nanonseconds 25 Temperature - Degrees C Temperature - Degrees C Fig. 12a. Low side turn-on and turn-off delay times vs. temperature. 160 150 140 Typ. ton 130 Max. toff 120 Typ. toff 110 5 10 15 20 130 120 Max. ton 110 100 25 30 80 Typ. toff 60 10 35 Typ. ton Max. toff 90 70 100 15 VCL Supply Voltage - Volts 20 25 30 35 VCH Supply Voltage - Volts Fig. 13a. Low side turn-on and turn-off delay times vs. VCL. Fig. 13b. High side turn-on and turn-off delay times vs. VCH. 200 225 Time - nanoseconds Time - nanaseconds 0 160 Max. toff Max. ton 120 Typ. ton 80 Typ. toff 40 4 6 8 10 12 14 16 18 20 VDD Supply Voltage- Volts Fig. 14a. Low side turn-on and turn-off delay times vs. VDD supply voltage. IXYS reserves the right to change limits, test conditions, and dimensions. 200 Max. toff 175 Max. ton 150 Typ. ton 125 Typ. toff 100 75 4 6 8 10 12 14 16 18 20 VDD Supply Voltage - Voltage Fig. 14b. High side turn-on and turn-off delay times vs. VDD. IX6R11 250 Enable Delay Time - ns Enable Delay Time - ns 200 175 Max. High Side 150 125 Typ. High Side 100 Max. Low side Typ. Low side 75 200 Max. High Side 150 Typ. High Side Max. Low side 100 Typ. Low side 50 10 12 14 16 18 20 22 24 26 28 30 50 -50 -25 0 25 50 75 100 125 V CL /V CH Supply Voltage - Volts Temperature - Degrees C Fig. 15a. High and Low side ENABLE (Shutdown) times vs. temperature. Fig.15b. High and Low side ENABLE (Shutdown) times vs. supply voltage. Turn-on & Turn-off Rise Time - ns Enable Delay Time - ns 300 225 Max. High Side 150 Typ. High Side Max. Low side 75 Typ. Low side 0 4 6 8 10 12 14 16 18 20 30 25 Max. turn-on Typ. turn-on 20 Max. turn-off 15 Typ. turn-off 10 -50 V DD Supply Voltage - Volts 0 25 50 75 100 125 Temperature - Degrees C Fig. 15c. High and Low side ENABLE (Shutdown) times vs. supply voltage. Fig. 16a. Turn-on and turn-off rise times vs. temperature. 25 25 Max. High Side Turn-off Fall Time - ns Turn-on Rise Time - ns -25 20 Typ. High Side Max. Low side 15 Typ. Low side 10 10 15 20 25 30 35 V CL /V CH Supply Voltage - Volts Fig. 16b. Turn-on rise times vs. bias supply voltages. (c) 2007 IXYS CORPORATION All rights reserved Max. High Side 20 Max. Low side Typ. High Side 15 Typ. Low side 10 10 15 20 25 30 35 V CL /V CH Supply Voltage - Volts Fig. 16c. Turn-off delay times vs. bias supply voltages. Logic Input Threshold - Volts 12 VCH = 15V 10 ENB Max Logic `1' 8 N HI 6 & L IN ` ic og xL a M ENB Min Logic `0' HIN 4 & 1' L Min LIN c `0 ogi ' 2 0 0 4 8 12 16 20 Offset Supply Leakage Current - A IX6R11 300 275 Maximum 250 225 200 Typical 175 150 -50 VDD Logic Supply Voltage - Volts 25 50 75 100 125 Fig. 18. Offset supply leakage current vs. temperature. 60 50 Load: IXTU01N100 50 Case Temperature - oC Logic Input Bias Current - A 0 Temperature - Degrees C Fig. 17. Logic input threshold voltage vs bias supply voltage. 40 Maximum 30 20 Typical 10 0 0 2 4 6 8 45 V = 500V 40 V = 140V 35 30 Frequency - kHz Fig. 20. IX6R11S3 Case temperature rise vs. operating frequency Fig. 19. Logic input current vs. bias voltage. 18 9 16 Output Source Current (A) 10 8 Maximum 7 6 5 Typical 4 3 2 -50 -25 0 25 50 75 100 V = 320V 25 100 200 300 400 500 600 700 800 900 1000 10 12 14 16 18 20 VDD Logic Supply Voltage (V) Output Source Current (A) -25 125 Temperature - Degrees C Fig. 21a. Output source current vs. temperature IXYS reserves the right to change limits, test conditions, and dimensions. 14 Maximum 12 10 8 Typical 6 4 2 0 10 15 20 25 30 35 VBIAS Supply Voltage (V) Fig. 21b. Output source current vs supply voltatge -12 - 20 -11 - 18 Output Current - Amperes Output Current - Amperes IX6R11 -10 -9 Typical -8 -7 -6 Minimum -5 -4 -3 -2 -50 -25 0 25 50 75 100 - 16 - 14 Typical - 12 - 10 Minimum -8 -6 -4 -2 0 10 125 15 20 Temperature - oC Undervoltage Lockout (-) - Volts Undervoltage Lockout (+) - Volts 14 13 12 Max Typ 9 8 Min 7 6 5 -50 -25 0 25 50 75 100 125 Temperature - oC 15 14 13 12 Max 10 Typ 9 8 7 Min 6 5 -50 -25 0 25 50 75 100 125 o Temperature - C Fig. 24a. VCL Undervoltage positive trip vs. temperature. (c) 2007 IXYS CORPORATION All rights reserved 16 15 14 13 12 Max 11 10 Typ 9 8 7 Min 6 5 4 -50 -25 0 25 50 75 100 125 Temperature - oC Fig. 23b. VCH Undervoltage negative trip vs. temperature. Undervoltage Lockout (-) - Volts Undervoltage Lockout (+) - Volts Fig. 23a. VCH Undervoltage positive trip vs. temperature. 11 35 Fig. 22b. Output sink current vs. bias voltage 15 10 30 Bias Voltage - Volts Fig. 22a. Output sink current vs. temperature 11 25 15 14 13 12 Max 11 10 9 Typ 8 7 Min 6 5 -50 -25 0 25 50 75 100 125 Temperature - oC Fig. 24b. VCL Undervoltage negative trip vs. temperature. IX6R11 1100 1100 Maximum 1000 VCH Current - A VCH Current - A 1000 900 800 Typical Maximum 900 700 700 600 600 10 -50 -25 0 25 50 75 100 125 70 VCL Current - A 850 800 Typical 750 700 650 600 -50 -25 0 25 50 75 100 125 Fig. 26. Quiescent current vs. temperature for the low side power supply 75 Case Temperature - C o 45 Load Conditions: A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH=200V E: IXTU01N100 @ VCH= 400V F: IXTU01N100 @ VCH= 200V B A D C 40 35 30 35 65 Load Conditions: B C E 60 55 D A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH=200V E: IXTU01N100 @ VCH= 400V F: IXTU01N100 @ VCH= 200V 50 45 40 35 E F 30 25 100 200 300 400 500 600 700 800 900 1000 Frequency - kHz Temperature - oC 50 30 A o Case Temperature - C Maximum 900 55 25 75 950 60 20 Fig. 25b. Quiescent current vs. voltage for the high side power supply. 1000 65 15 VCH Voltage - Volts Temperature - oC Fig. 25a. Quiescent current vs. temperature for the high side power supply. 70 Typical 800 F 25 100 200 300 400 500 600 700 800 900 1000 Frequency - kHz Fig. 27b. Case temperature rise vs. switching frequency for IX6R11S6 IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 27a. Case temperature rise vs. switching frequency for IX6R11S3 IX6R11 A2 b b2 c D D1 E E1 e eA eB L E D e H B C D E e H h L M N A A1 B h x 45%%d L N c M E H e D h A e B D1 A1 h x 45 E1 (c) 2007 IXYS CORPORATION All rights reserved L c