1
PNZ150L
Silicon NPN Phototransistor
For optical control systems
Phototransistors
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current ICEO VCEO = 10V 0.01 0.2 µA
Sensitivity to infrared emitters
SIR*1 VCE = 10V, H = 15µW/cm216 µA
Collector saturation voltage
VCE(sat) VCE = 10V, H = 15µW/cm20.2 0.5 V
Peak sensitivity wavelength
λPVCEO = 10V 800 nm
Response time tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100 Ω4µs
Acceptance half angle θ
Measured from the optical axis to the half power point
35 deg.
*1 Measurements were made using infrared light (λ = 940 nm) as a light source.
*2 Response time measurement circuit
4.5±0.3 4.2±0.3 1.92.3
Unit : mm
1: Emitter
2: Collector
2.414.52.2 2.95 2.4
4.8±0.3
42.7±1.0
2-1.12
2-0.45±0.15
0.4±0.15
1.2
2-0.6±0.15
2-0.45±0.15
2.54
12
Not soldered
ø3.5±0.2
R1.75
1.0
,,
,,
,
,
(Input pulse)
(Output pulse)
50ΩR
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT 10%
90%
Sig.IN
t
d
t
r
t
f
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
VCEO 20 V
Collector current IC20 mA
Collector power dissipation
PC100 mW
Operating ambient temperature
Topr –25 to +85 ˚C
Storage temperature Tstg –30 to +100 ˚C
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Small size, thin side-view type package
2
Phototransistors PNZ150L
tr — ICE(L)
Collector photo current ICE(L) (mA)
Rise time tr (µs)
VCC = 10V
Ta = 25˚C
10 4
10 3
10 2
10
1
10 –1 10 –1 10 10 2
110 –2
tf — ICE(L)
Collector photo current ICE(L) (mA)
Fall time tf (µs)
VCC = 10V
Ta = 25˚C
10 4
10 3
10 2
10
1
10 –1 10 –1 10 10 2
110 –2
PC — Ta
120
100
80
60
40
20
Ambient temperature Ta (˚C )
Collector power dissipation PC (mW)
0 20406080100
0
– 20
Ta = 25˚C
T = 2856K
ICE(L) — VCE
20
16
12
4
8
0
Collector to emitter voltage VCE (V)
Collector photo current ICE(L) (mA)
02016812424
I
CE(L) — L
Illuminance L (lx)
Collector photo current ICE(L) (mA)
VCE = 10V
Ta = 25˚C
T = 2856K
10 2
10
1
10 –1
10 –2
10 10 3 10 4
10 2
10 –3 1
Spectral sensitivity characteristics
100
80
60
40
20
Wavelength λ (nm)
Relative sensitivity S (%)
400 600 800 1000 1200
0
200
VCE = 10V
Ta = 25˚C
ICEO — Ta
10
10 –1
10 –2
1
Ambient temperature Ta (˚C )
VCE = 10V
Dark current ICEO (µA)
10 –3
– 40 0 40 80 120
ICE(L) — Ta
10 2
10
Ambient temperature Ta (˚C )
VCE = 10V
T = 2856K
Collector photo current ICE(L) (mA)
1
– 40 0 40 80 120
0˚ 10˚ 20˚
30˚
40˚
50˚
60˚
70˚
80˚
90˚
Directivity characteristics
20
90
100
80
70
60
50
40
30
Relative sensitivity S (%)
250 lx
750 lx
500 lx
L = 2000 lx
1000 lx
1500 lx
1750 lx
1250 lx
100 lx
500 lx
L = 1000 lx
RL = 1kΩ
500Ω
100Ω
RL = 1kΩ
500Ω
100Ω
