SJJ00395AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: November 2007 1
Composite Transistors
UP04979G
Silicon N-channel MOSFET (Tr1)
Silicon P-channel MOSFET (Tr2)
For switching
Features
High-speed switching
Incorporating a built-in gate protection-diode
Two elements incorporated into one package (Each transistor is separated)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SJ0672 + 2SK3539G
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Tr1
Drain-source surrender voltage VDSS 50 V
Gate-source voltage (Drain open) VGSO ±7V
Drain current ID100 mA
Peak drain current IDP 200 mA
Tr2
Drain-source surrender voltage VDSS –30 V
Gate-source voltage (Drain open) VGSO ±7V
Drain current ID–100 mA
Peak drain current IDP –200 mA
Overall
Total power dissipation * PT125 mW
Channel temperature Tch 125 °C
Storage temperature Tstg –55 to +125 °C
注) * : 基板(17 mm × 10 mm × 1 mm)上で測定
Package
Code
SSMini6-F2
Pin Name
1: Source (FET1) 4: Source (FET2)
2: Gate (FET1) 5: Gate (FET2)
3: Drain (FET2) 6: Drain (FET1)
Marking Symbol: 4T
Internal Connection
(G2)
5
(D1)
6
(S2)
4
1
(S1)
2
(G1)
3
(D2)
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
SJJ00395AED
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04979G
2
Electrical Characteristics Ta = 25°C±3°C
Tr1
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = 10 µA, VGS = 0 50 V
Drain-source cutoff current IDSS VDS = 30 V, VGS = 0 1.0 µA
Gate-source cutoff current IGSS VGS = ±7 V, VDS = 0 ±10 µA
Gate threshold voltage Vth ID = 1.0 µA, VDS = 3.0 V 0.5 1.0 1.5 V
Drain-source ON resistance RDS(on)
ID = 10 mA, VGS = 2.5 V 8 15
Ω
ID = 10 mA, VGS = 4.0 V 6 12
Forward transfer conductance Yfs ID = 10 mA, VDS = 3.0 V 20 60 mS
Turn-on time *ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 200 ns
Turn-off time *toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 200 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Refer to ton, toff test circuit.
VOUT
VDD = 3 V
VGS = 3.0 V
50 Ω
470 Ω
100 µF
VIN
90%
10%
10%
90%
VOUT
ton toff
ton , toff Test circuit (Tr1)
Tr2
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = –10 µA, VGS = 0 –30 V
Drain-source cutoff current IDSS VDS = –20 V, VGS = 0 –1.0 µA
Gate-source cutoff current IGSS VGS = ±7 V, VDS = 0 ±10 µA
Gate threshold voltage Vth ID = –1.0 µA, VDS = –3.0 V – 0.5 –1.0 –1.5 V
Drain-source ON resistance RDS(on)
ID = –10 mA, VGS = –2.5 V 25 45
Ω
ID = –10 mA, VGS = –4.0 V 15 30
Forward transfer conductance Yfs ID = –10 mA, VDS = –3.0 V 20 35 mS
Turn-on time *ton
VDD = –3 V, VGS = 0 V to –3 V, ID = –10 mA
850 ns
Turn-off time *toff
VDD = –3 V, VGS = –3 V to 0 V, ID = –10 mA
850 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Refer to ton, toff test circuit.
VOUT
VDD = −3 V
VGS = 0 V ∼ −3 V
50 Ω
280 Ω
100 µF
VGS
10%
90%
10%
90%
VOUT
ton toff
ton , toff Test circuit (Tr2)
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
SJJ00395AED
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04979G
3
ID VDS ID VGS Yfs ID
PT Ta
Yfs VGS RDS(on) VGS
Common characteristics chart
Characteristics charts of Tr1
00 2 4 6 8 10 12
40
Gate-source voltage VGS (V)
Drain-source ON resistance RDS(on) (Ω)
30
20
10
ID = 10 mA
Ta = 85°C
−25°C
25°C
Ambient temperature Ta (°C)
Total power dissipation PT (mW)
0 80 12040
0
140
120
100
80
60
40
20
00 122 104 86
70
60
Drain-source voltage VDS (V)
Drain current ID (mA)
50
40
30
20
10
Ta = 25°C
VGS = 2.0 V
1.5 V
1.6 V
1.7 V
1.8 V
1.9 V
00 3 4 5 61 2
300
250
Gate-source voltage VGS (V)
Drain current ID (mA)
200
150
100
50
VDS = 3 V
Ta = −25°C
85°C
25°C
Forward transfer admittance |Yfs | (mS)
Gate-source voltage VGS (V)
0123
0
40
20
120
100
180
160
140
80
60
VDS = 3 V
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
SJJ00395AED
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04979G
4
Characteristics charts of Tr2
ID VDS ID VGS Yfs VGS
RDS(on) VGS
Forward transfer admittance |Yfs | (mS)
Gate-source voltage VGS (V)
0−2−4−6
0
20
10
60
50
70
40
30
00−2−4−6
50
40
Gate-source voltage VGS (V)
Drain-source ON resistance RDS(on) (Ω)
30
20
10
ID = −10 mA
−25°C
25°C
Ta = 85°C
00−12−2−10−4−8−6
−80
−100
−120
−60
Drain-source voltage VDS (V)
Drain current ID (mA)
−40
−20
Ta = 25°C
VGS = −3.50 V
−3.25 V
−3.00 V
−2.75 V
−2.50 V
00−2−4−6
−180
Gate-source voltage VGS (V)
Drain current ID (mA)
−20
−40
−60
−80
−100
−120
−140
−160
VDS = −3 V Ta = −25°C
85°C
25°C
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
SJJ00395AED
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04979G
5
SSMini6-F2 Unit: mm
1.60 ±0.05
0.20 +0.05
−0.02
6 5 4
1 2 3
1.60 ±0.05
1.20 ±0.05
1.00 ±0.05
(0.5) (0.5)
(5°)
0.55 ±0.05
0 to 0.05
(0.27)
0.13 +0.05
−0.02
(5°)
0.20 ±0.05
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/