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LM4667 Filterless High Efficiency 1.3W Switching Audio
Amplifier
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1FEATURES DESCRIPTION
The LM4667 is a fully integrated single-supply high
2 No Output Filter Required for Inductive efficiency switching audio amplifier. It features an
Transducers innovative modulator that eliminates the LC output
Selectable Gain of 6dB or 12dB filter used with typical switching amplifiers.
Very Fast Turn on Time: 5ms (typ) Eliminating the output filter reduces parts count,
simplifies circuit design, and reduces board area. The
Minimum External Components LM4667 processes analog inputs with a delta-sigma
"Click and Pop" Suppression Circuitry modulation technique that lowers output noise and
Micro-Power Shutdown Mode THD when compared to conventional pulse width
modulators.
Short Circuit Protection
Space-Saving DSBGA and VSSOP Packages The LM4667 is designed to meet the demands of
mobile phones and other portable communication
devices. Operating on a single 3V supply, it is
KEY SPECIFICATIONS capable of driving 8transducer loads at a
Efficiency at 3V, 100mW into 8ΩTransducer continuous average output of 450mW with less than
74% (typ) 1%THD+N. Its flexible power supply requirements
allow operation from 2.7V to 5.5V.
Efficiency at 3V, 450mW into 8ΩTransducer
84% (typ) The LM4667 has high efficiency with an 8
Efficiency at 5V, 1W into 8ΩTransducer 86% transducer load compared to a typical Class AB
(typ) amplifier. With a 3V supply, the IC's efficiency for a
100mW power level is 74%, reaching 84% at 450mW
Total Quiescent Power Supply Current: 3.5mA output power.
(typ) The LM4667 features a low-power consumption
Total Shutdown Power Supply Current: 0.01μAshutdown mode. Shutdown may be enabled by
(typ) driving the Shutdown pin to a logic low (GND).
Single Supply Range: 2.7V to 5.5V The LM4667 has fixed selectable gain of either 6dB
or 12dB. The LM4667 has short circuit protection
APPLICATIONS against a short from the outputs to VDD, GND, or
Mobile Phones across the outputs.
PDAs
Portable Electronic Devices
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2003–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
SHUTDOWN V02
IN- VDD
NC GND
IN+ GND
GAIN SELECT V01
1 10
2 9
3 8
4 7
5 6
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Typical Application
Figure 1. Typical Audio Amplifier Application Circuit
Connection Diagrams
Top View Top View
Figure 2. Bump DSBGA Package Figure 3. VSSOP Package
See Package Number YZR0009AAA See Package Number DGS0010A
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)(3)
Supply Voltage(1) 6.0V
Storage Temperature 65°C to +150°C
Voltage at Any Input Pin VDD + 0.3V VGND - 0.3V
Power Dissipation(4) Internally Limited
ESD Susceptibility(5) 7.0kV
ESD Susceptibility(6) 250V
Junction Temperature (TJ) 150°C
θJA (DSBGA) 220°C/W
Thermal Resistance θJA (VSSOP ) 190°C/W
θJC (VSSOP) 56°C/W
Soldering Information: see AN-1112 "microSMD Wafers Level Chip Scale Package."
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good
indication of device performance.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX,θJA, and the ambient temperature
TA. The maximum allowable power dissipation is PDMAX = (TJMAX–TA)/θJA or the number given in Absolute Maximum Ratings, whichever
is lower. For the LM4667, TJMAX = 150°C. The typical θJA is 220°C/W for the DSBGA package and 190°C/W for the VSSOP package.
(5) Human body model, 100pF discharged through a 1.5kresistor.
(6) Machine Model, 220pF–240pF discharged through all pins.
Operating Ratings(1)
Temperature Range
TMIN TATMAX 40°C TA85°C
Supply Voltage 2.7V VDD 5.5V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good
indication of device performance.
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Electrical Characteristics VDD = 5V(1)(2)
The following specifications apply for VDD = 5V and RL= 15µH + 8+ 15µH unless otherwise specified. Limits apply for TA=
25°C. LM4667 Units
Parameter Test Conditions (Limits)
Typ(3) Limit(4)(5)
IDD Quiescent Power Supply Current VIN = 0V, No Load 8 mA
VIN = 0V, RL= 15µH + 8+ 15µH 9 mA
ISD Shutdown Current VSD = GND(6) 0.01 µA
VSDIH Shutdown Voltage Input High 1.2 V
VSDIL Shutdown Voltage Input Low 1.1 V
VGSIH Gain Select Input High 1.2 V
VGSIL Gain Select Input Low 1.1 V
AVClosed Loop Gain VGain Select = VDD 6 dB
AVClosed Loop Gain VGain Select = GND 12 dB
VOS Output Offset Voltage 10 mV
TWU Wake-up Time 5 ms
PoOutput Power THD = 2% (max), f = 1kHz 1.3 W
THD+N Total Harmonic Distortion+Noise PO= 100mWRMS; fIN = 1kHz 0.8 %
VGain Select = VDD 90 k
RIN Differential Input Resistance VGain Select = GND 60 k
VRipple = 100mVRMS sine wave 55 dB
Inputs terminated to GND (f = 217Hz)
PSRR Power Supply Rejection Ratio VRipple = 100mVRMS sine wave 65 dB
POUT = 10mW,1kHz (f = 217Hz)
CMRR Common Mode Rejection Ratio VRipple = 100mVRMS, 41 dB
fRipple = 217Hz
SNR Signal to Noise Ratio PO= 1WRMS; A-Weighted Filter 83 dB
εOUT Output Noise A-Weighted filter, Vin = 0V 200 µV
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good
indication of device performance.
(3) Typical specifications are specified at 25°C and represent the parametric norm.
(4) Tested limits are ensured to AOQL (Average Outgoing Quality Level).
(5) Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
(6) Shutdown current is measured in a normal room environment. Exposure to direct sunlight will increase ISD by a maximum of 2µA. The
Shutdown pin should be driven as close as possible to GND for minimal shutdown current and to VDD for the best THD performance in
PLAY mode. See the SHUTDOWN FUNCTION section under Application Information for more information.
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Electrical Characteristics VDD = 3V(1)(2)
The following specifications apply for VDD = 3V and RL= 15µH + 8+ 15µH unless otherwise specified. Limits apply for TA=
25°C. LM4667 Units
Parameter Test Conditions (Limits)
Typ(3) Limit(4)(5)
IDD Quiescent Power Supply Current VIN = 0V, No Load 3.50 5.0 mA (max)
VIN = 0V, RL= 15µH + 8+ 15µH 3.75
ISD Shutdown Current VSD = GND(6) 0.01 2.0 µA (max)
VSDIH Shutdown Voltage Input High 1.0 1.4 V (min)
VSDIL Shutdown Voltage Input Low 0.8 0.4 V (max)
VGSIH Gain Select Input High 1.0 1.4 V (min)
VGSIL Gain Select Input Low 0.8 0.4 V (max)
5.5 dB (min)
AVClosed Loop Gain VGain Select = VDD 66.5 dB (max)
11.5 dB (min)
AVClosed Loop Gain VGain Select = GND 12 12.5 dB (max)
VOS Output Offset Voltage 10 25 mV (max)
TWU Wake-up Time 5 ms
PoOutput Power THD = 1% (max); f = 1kHz 450 425 mW (min)
THD+N Total Harmonic Distortion+Noise PO= 100mWRMS; fIN = 1kHz 0.35 %
VGain Select = VDD 90 k
RIN Differential Input Resistance VGain Select = GND 60 k
Vripple = 100mVRMS sine wave 56 dB
Inputs terminated to GND (f = 217Hz)
PSRR Power Supply Rejection Ratio VRipple = 100mVRMS sine wave 65 dB
POUT = 10mW,1kHz (f = 217Hz)
CMRR Common Mode Rejection Ratio VRipple = 100mVRMS, 41 dB
fRipple = 217Hz
SNR Signal to Noise Ratio PO= 400mWRMS, A-Weighted Filter 83 dB
εOUT Output Noise A-Weighted filter, Vin = 0V 125 µV
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good
indication of device performance.
(3) Typical specifications are specified at 25°C and represent the parametric norm.
(4) Tested limits are ensured to AOQL (Average Outgoing Quality Level).
(5) Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
(6) Shutdown current is measured in a normal room environment. Exposure to direct sunlight will increase ISD by a maximum of 2µA. The
Shutdown pin should be driven as close as possible to GND for minimal shutdown current and to VDD for the best THD performance in
PLAY mode. See the SHUTDOWN FUNCTION section under Application Information for more information.
External Components Description
(See Figure 1)
Components Functional Description
1. CSSupply bypass capacitor which provides power supply filtering. Refer to the Power Supply Bypassing section for
information concerning proper placement and selection of the supply bypass capacitor.
2. CIInput AC coupling capacitor which blocks the DC voltage at the amplifier's input terminals.
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Typical Performance Characteristics
THD+N vs Frequency THD+N vs Frequency
VDD = 5V, RL= 15µH + 8+ 15µH VDD = 3V, RL= 15µH + 8+ 15µH
POUT = 100mW, 30kHz BW POUT = 100mW, 30kHz BW
Figure 4. Figure 5.
THD+N vs Frequency THD+N vs Power Out
VDD = 3V, RL= 15µH + 4+ 15µH VDD = 5V, RL= 15µH + 8+ 15µH
POUT = 300mW, 30kHz BW f = 1kHz, 22kHz BW
Figure 6. Figure 7.
THD+N vs Power Out THD+N vs Power Out
VDD = 3V, RL= 15µH + 4+ 15µH VDD = 3V, RL= 15µH + 8+ 15µH
f = 1kHz, 22kHz BW f = 1kHz, 22kHz BW
Figure 8. Figure 9.
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Typical Performance Characteristics (continued)
CMRR vs Frequency CMRR vs Frequency
VDD = 5V, RL= 15µH + 8+ 15µH VDD = 3V, RL= 15µH + 8+ 15µH
VCM = 300mVRMS Sine Wave, 30kHz BW VCM = 300mVRMS Sine Wave, 30kHz BW
Figure 10. Figure 11.
PSRR vs Frequency PSRR vs Frequency
VDD = 5V, RL= 15µH + 8+ 15µH VDD = 3V, RL= 15µH + 8+ 15µH
VRipple = 100mVRMS Sine Wave, 22kHz BW VRipple = 100mVRMS Sine Wave, 22kHz BW
Figure 12. Figure 13.
Efficiency and Power Dissipation vs Output Power Efficiency and Power Dissipation vs Output Power
VDD = 5V, RL= 15µH + 8+ 15µH, f = 1kHz, THD < 2% VDD = 3V, RL= 15µH + 8+ 15µH, f = 1kHz, THD < 1%
Figure 14. Figure 15.
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Typical Performance Characteristics (continued)
Efficiency and Power Dissipation vs Output Power Gain Select Threshold
VDD = 3V, RL= 15µH + 4+ 15µH, f = 1kHz, THD < 1% VDD = 3V
Figure 16. Figure 17.
Gain Select Threshold Gain Select Threshold vs Supply Voltage
VDD = 5V RL= 15µH + 8+ 15µH
Figure 18. Figure 19.
Output Power vs Supply Voltage Output Power vs Supply Voltage
RL= 15µH + 4+ 15µH, f = 1kHz RL= 15µH + 8+ 15µH, f = 1kHz
Figure 20. Figure 21.
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Typical Performance Characteristics (continued)
Output Power vs Supply Voltage Shutdown Threshold
RL= 15µH + 16+ 15µH, f = 1kHz VDD = 5V
Figure 22. Figure 23.
Shutdown Threshold Shutdown Threshold vs Supply Voltage
VDD = 3V RL= 15µH + 8+ 15µH
Figure 24. Figure 25.
Supply Current vs Shutdown Voltage Supply Current vs Supply Voltage
RL= 15µH + 8+ 15µH RL= 15µH + 8+ 15µH
Figure 26. Figure 27.
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APPLICATION INFORMATION
GENERAL AMPLIFIER FUNCTION
The output signals generated by the LM4667 consist of two, BTL connected, output signals that pulse
momentarily from near ground potential to VDD. The two outputs can pulse independently with the exception that
they both may never pulse simultaneously as this would result in zero volts across the BTL load. The minimum
width of each pulse is approximately 160ns. However, pulses on the same output can occur sequentially, in
which case they are concatenated and appear as a single wider pulse to achieve an effective 100% duty cycle.
This results in maximum audio output power for a given supply voltage and load impedance. The LM4667 can
achieve much higher efficiencies than class AB amplifiers while maintaining acceptable THD performance.
The short (160ns) drive pulses emitted at the LM4667 outputs means that good efficiency can be obtained with
minimal load inductance. The typical transducer load on an audio amplifier is quite reactive (inductive). For this
reason, the load can act as it's own filter, so to speak. This "filter-less" switching amplifier/transducer load
combination is much more attractive economically due to savings in board space and external component cost
by eliminating the need for a filter.
POWER DISSIPATION AND EFFICIENCY
In general terms, efficiency is considered to be the ratio of useful work output divided by the total energy required
to produce it with the difference being the power dissipated, typically, in the IC. The key here is “useful” work. For
audio systems, the energy delivered in the audible bands is considered useful including the distortion products of
the input signal. Sub-sonic (DC) and super-sonic components (>22kHz) are not useful. The difference between
the power flowing from the power supply and the audio band power being transduced is dissipated in the
LM4667 and in the transducer load. The amount of power dissipation in the LM4667 is very low. This is because
the ON resistance of the switches used to form the output waveforms is typically less than 0.25. This leaves
only the transducer load as a potential "sink" for the small excess of input power over audio band output power.
The LM4667 dissipates only a fraction of the excess power requiring no additional PCB area or copper plane to
act as a heat sink.
DIFFERENTIAL AMPLIFIER EXPLANATION
As logic supply voltages continue to shrink, designers are increasingly turning to differential analog signal
handling to preserve signal to noise ratios with restricted voltage swing. The LM4667 is a fully differential
amplifier that features differential input and output stages. A differential amplifier amplifies the difference between
the two input signals. Traditional audio power amplifiers have typically offered only single-ended inputs resulting
in a 6dB reduction in signal to noise ratio relative to differential inputs. The LM4667 also offers the possibility of
DC input coupling which eliminates the two external AC coupling, DC blocking capacitors. The LM4667 can be
used, however, as a single ended input amplifier while still retaining it's fully differential benefits. In fact,
completely unrelated signals may be placed on the input pins. The LM4667 simply amplifies the difference
between the signals. A major benefit of a differential amplifier is the improved common mode rejection ratio
(CMRR) over single input amplifiers. The common-mode rejection characteristic of the differential amplifier
reduces sensitivity to ground offset related noise injection, especially important in high noise applications.
PCB LAYOUT CONSIDERATIONS
As output power increases, interconnect resistance (PCB traces and wires) between the amplifier, load and
power supply create a voltage drop. The voltage loss on the traces between the LM4667 and the load results is
lower output power and decreased efficiency. Higher trace resistance between the supply and the LM4667 has
the same effect as a poorly regulated supply, increase ripple on the supply line also reducing the peak output
power. The effects of residual trace resistance increases as output current increases due to higher output power,
decreased load impedance or both. To maintain the highest output voltage swing and corresponding peak output
power, the PCB traces that connect the output pins to the load and the supply pins to the power supply should
be as wide as possible to minimize trace resistance.
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The rising and falling edges are necessarily short in relation to the minimum pulse width (160ns), having
approximately 2ns rise and fall times, typical, depending on parasitic output capacitance. The inductive nature of
the transducer load can also result in overshoot on one or both edges, clamped by the parasitic diodes to GND
and VDD in each case. From an EMI standpoint, this is an aggressive waveform that can radiate or conduct to
other components in the system and cause interference. It is essential to keep the power and output traces short
and well shielded if possible. Use of ground planes, beads, and micro-strip layout techniques are all useful in
preventing unwanted interference.
POWER SUPPLY BYPASSING
As with any power amplifier, proper supply bypassing is critical for low noise performance and high power supply
rejection ratio (PSRR). The capacitor (CS) location should be as close as possible to the LM4667. Typical
applications employ a voltage regulator with a 10µF and a 0.1µF bypass capacitors that increase supply stability.
These capacitors do not eliminate the need for bypassing on the supply pin of the LM4667. A 1µF tantalum
capacitor is recommended.
SHUTDOWN FUNCTION
In order to reduce power consumption while not in use, the LM4667 contains shutdown circuitry that reduces
current draw to less than 0.01µA. The trigger point for shutdown is shown as a typical value in the Electrical
Characteristics Tables and in the Shutdown Hysteresis Voltage graphs found in the Typical Performance
Characteristics section. It is best to switch between ground and supply for minimum current usage while in the
shutdown state. While the LM4667 may be disabled with shutdown voltages in between ground and supply, the
idle current will be greater than the typical 0.01µA value. Increased THD may also be observed with voltages
less than VDD on the Shutdown pin when in PLAY mode.
The LM4667 has an internal resistor connected between GND and Shutdown pins. The purpose of this resistor is
to eliminate any unwanted state changes when the Shutdown pin is floating. The LM4667 will enter the shutdown
state when the Shutdown pin is left floating or if not floating, when the shutdown voltage has crossed the
threshold. To minimize the supply current while in the shutdown state, the Shutdown pin should be driven to
GND or left floating. If the Shutdown pin is not driven to GND, the amount of additional resistor current due to the
internal shutdown resistor can be found by Equation (1) below.
(VSD - GND) / 60k(1)
With only a 0.5V difference, an additional 8.3µA of current will be drawn while in the shutdown state.
GAIN SELECTION FUNCTION
The LM4667 has fixed selectable gain to minimize external components, increase flexibility and simplify design.
For a differential gain of 6dB, the Gain Select pin should be permanently connected to VDD or driven to a logic
high level. For a differential gain of 12dB, the Gain Select pin should be permanently connected to GND or driven
to a logic low level. The gain of the LM4667 can be switched while the amplifier is in PLAY mode driving a load
with a signal without damage to the IC. The voltage on the Gain Select pin should be switched quickly between
GND (logic low) and VDD (logic high) to eliminate any possible audible artifacts from appearing at the output. For
typical threshold voltages for the Gain Select function, refer to the Gain Threshold Voltages graph in the Typical
Performance Characteristics section.
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SINGLE-ENDED CIRCUIT CONFIGURATIONS
Figure 28. Single-Ended Input with Low Gain Selection Configuration
Figure 29. Single-Ended Input with High Gain Selection Configuration
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REFERENCE DESIGN BOARD SCHEMATIC
Figure 30.
In addition to the minimal parts required for the application circuit, a measurement filter is provided on the
evaluation circuit board so that conventional audio measurements can be conveniently made without additional
equipment. This is a balanced input / grounded differential output low pass filter with a 3dB frequency of
approximately 35kHz and an on board termination resistor of 300(see Figure 30). Note that the capacitive load
elements are returned to ground. This is not optimal for common mode rejection purposes, but due to the
independent pulse format at each output there is a significant amount of high frequency common mode
component on the outputs. The grounded capacitive filter elements attenuate this component at the board to
reduce the high frequency CMRR requirement placed on the analysis instruments.
Even with the grounded filter the audio signal is still differential, necessitating a differential input on any analysis
instrument connected to it. Most lab instruments that feature BNC connectors on their inputs are NOT differential
responding because the ring of the BNC is usually grounded.
The commonly used Audio Precision analyzer is differential, but its ability to accurately reject fast pulses of
160nS width is questionable necessitating the on board measurement filter. When in doubt or when the signal
needs to be single-ended, use an audio signal transformer to convert the differential output to a single ended
output. Depending on the audio transformer's characteristics, there may be some attenuation of the audio signal
which needs to be taken into account for correct measurement of performance.
Measurements made at the output of the measurement filter suffer attenuation relative to the primary, unfiltered
outputs even at audio frequencies. This is due to the resistance of the inductors interacting with the termination
resistor (300) and is typically about -0.35dB (4%). In other words, the voltage levels (and corresponding power
levels) indicated through the measurement filter are slightly lower than those that actually occur at the load
placed on the unfiltered outputs. This small loss in the filter for measurement gives a lower output power reading
than what is really occurring on the unfiltered outputs and its load.
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LM4667 DSBGA BOARD ARTWORK
Figure 31. Composite View
Figure 32. Silk Screen
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Figure 33. Top Layer
Figure 34. Bottom Layer
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LM4667 VSSOP BOARD ARTWORK
Figure 35. Composite View
Figure 36. Silk Screen
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Figure 37. Top Layer
Figure 38. Bottom Layer
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REVISION HISTORY
Changes from Revision B (May 2013) to Revision C Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 17
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PACKAGE OPTION ADDENDUM
www.ti.com 26-Aug-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM4667ITL/NOPB ACTIVE DSBGA YZR 9 250 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 G
B4
LM4667MM/NOPB ACTIVE VSSOP DGS 10 1000 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 GA6
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM4667ITL/NOPB DSBGA YZR 9 250 178.0 8.4 1.7 1.7 0.76 4.0 8.0 Q1
LM4667MM/NOPB VSSOP DGS 10 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Aug-2013
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM4667ITL/NOPB DSBGA YZR 9 250 210.0 185.0 35.0
LM4667MM/NOPB VSSOP DGS 10 1000 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Aug-2013
Pack Materials-Page 2
MECHANICAL DATA
YZR0009xxx
www.ti.com
TLA09XXX (Rev C)
0.600±0.075 D
E
A
. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
4215046/A 12/12
NOTES:
D: Max =
E: Max =
1.545 mm, Min =
1.545 mm, Min =
1.484 mm
1.484 mm
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