5-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF244 IRF245 IRF246 IRF247 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .VDS 250 250 275 275 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR 250 250 275 275 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 14 13 14 13 A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID8.8 8.0 8.8 8.0 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM 56 52 56 52 A
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . .PD125 125 125 125 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 1.0 1.0 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 550 550 550 550 mJ
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL
Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA
(Figure 10)
IRF244, IRF245 250 - - V
IRF246, IRF247 275 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TJ = 125oC- - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRF244, IRF246 14 - - A
IRF245, IRF247 13 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On-State Resistance (Note 2) rDS(ON) VGS = 10V, ID = 8A, (Figures 8, 9)
IRF244, IRF246 - 0.20 0.28 Ω
IRF245, IRF247 - 0.24 0.34 Ω
Forward Transconductance (Note 2) gfs VDS ≥50V, ID = 8A, (Figure 12) 6.7 10 - S
Turn-On Delay Time td(ON) VDD = 125V, ID≈ 14A, RG = 9.1Ω, RL = 8.9Ω
(Figures 17, 18) MOSFET Switching Times
are Essentially Independent of Operating
Temperature
-1624ns
Rise Time tr- 67 100 ns
Turn-Off Delay Time td(OFF) -5380ns
Fall Time tf-4974ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 14A, VDS = 0.8 x Rated
BVDSS, Ig(REF) = 1.5mA,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
-3959nC
Gate to Source Charge Qgs - 6.6 - nC
Gate to Drain “Miller” Charge Qgd -20- nC
IRF244, IRF245, IRF246, IRF247