5-1
Semiconductor
Features
• 14A and 13A, 275V and 250V
•r
DS(ON) = 0.28Ω and 0.34Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System
Operation
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER PACKAGE BRAND
IRF244 TO-204AA IRF244
IRF245 TO-204AA IRF245
IRF246 TO-204AA IRF246
IRF247 TO-204AA IRF247
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997 File Number 2209.2
IRF244, IRF245,
IRF246, IRF247
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
5-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF244 IRF245 IRF246 IRF247 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .VDS 250 250 275 275 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR 250 250 275 275 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 14 13 14 13 A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID8.8 8.0 8.8 8.0 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM 56 52 56 52 A
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . .PD125 125 125 125 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 1.0 1.0 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 550 550 550 550 mJ
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL
Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA
(Figure 10)
IRF244, IRF245 250 - - V
IRF246, IRF247 275 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TJ = 125oC- - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRF244, IRF246 14 - - A
IRF245, IRF247 13 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On-State Resistance (Note 2) rDS(ON) VGS = 10V, ID = 8A, (Figures 8, 9)
IRF244, IRF246 - 0.20 0.28 Ω
IRF245, IRF247 - 0.24 0.34 Ω
Forward Transconductance (Note 2) gfs VDS ≥50V, ID = 8A, (Figure 12) 6.7 10 - S
Turn-On Delay Time td(ON) VDD = 125V, ID≈ 14A, RG = 9.1Ω, RL = 8.9Ω
(Figures 17, 18) MOSFET Switching Times
are Essentially Independent of Operating
Temperature
-1624ns
Rise Time tr- 67 100 ns
Turn-Off Delay Time td(OFF) -5380ns
Fall Time tf-4974ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 14A, VDS = 0.8 x Rated
BVDSS, Ig(REF) = 1.5mA,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
-3959nC
Gate to Source Charge Qgs - 6.6 - nC
Gate to Drain “Miller” Charge Qgd -20- nC
IRF244, IRF245, IRF246, IRF247
5-3
IRF244, IRF245, IRF246, IRF247
Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 11) - 1300 - pF
Output Capacitance COSS - 320 - pF
Reverse-Transfer Capacitance CRSS -69- pF
Internal Drain Inductance LDMeasured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 5.0 - nH
Internal Source Inductance LSMeasured From The
Source Lead, 6mm
(0.25in) From the
Flange and the
Source Bonding Pad
- 12.5 - nH
Junction to Case RθJC - - 1.0 oC/W
Junction to Ambient RθJA Free Air Operation - - 30 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
- - 14 A
Pulse Source to Drain Current
(Note 3) ISM - - 56 A
Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13) - - 1.8 V
Reverse Recovery Time trr TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 150 300 640 ns
Reverse Recovered Charge QRR TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC
Forward Turn-On Time tON Intrinsic Turn-On Time is Negligible, Turn-On
Speed is Substantially Controlled by LS + LD----
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 14A. See Figures 15, 16.
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
LS
LD
G
D
S
G
D
S
5-4
IRF244, IRF245, IRF246, IRF247
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED PO WER DISSIPA TION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
TC, CASE TEMPERATURE (oC)
50 75 10025 150
15
12
9
0
6
ID, DRAIN CURRENT (A)
3
IRF245, IRF247
125
IRF244, IRF246
10
1
0.1
0.01
10-2
10-5 10-4 10-3 0.1 1 10
t1, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
DUTY FACTOR: D = t1/t2
t2
PDM
t1
NOTES:
t2
PEAK TJ= PDM x ZθJC + TC
0.2
0.1
0.05
0.01
0.02
0.001
0.5
ZθJC, TRANSIENT THERMAL
IMPEDANCE (oC/W)
100
10
110
100
0.1
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10µs
100µs
1ms
DC
10ms
IRF246,
IRF244, 246
1000
TJ = MAX RATED
SINGLE PULSE
TC = 25oC
OPERATION IN THIS
REGION IS LIMITED
BY rDS(ON)
IRF244, 246
IRF245, 247
IRF245, 247
IRF247
IRF244,
IRF245
1000
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
25 50 75 1000 125
25
20
15
0
10
ID, DRAIN CURRENT (A)
VGS =5.5V
VGS =4.5V
VGS = 5.0V
VGS =4.0V
80µs PULSE TEST
5
VGS =6.0V
VGS =10V
5-5
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN T O SOURCE BREAKDO WN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
VDS, DRAIN TO SOURCE VOLTAGE (V)
2468010
25
20
15
0
10
ID, DRAIN CURRENT (A)
80µs PULSE TEST
5
10V
5.5V
4.5V
VGS = 5.0V
4.0V
6.0V
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
100
10
1
0.1
0 246810
80µs PULSE TEST
VDS ≥50V
TJ = 150oCTJ = 25oC
60
ID, DRAIN CURRENT (A)
15 30 45
075
2.5
2.0
1.5
0
1.0
rDS(ON), DRAIN TO SOURCE
VGS = 20V
0.5
VGS = 10V
80µs PULSE TEST
ON RESISTANCE (Ω)
3.0
1.8
0.6
80-60 TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
2.4
1.2
00 60 120 160
ON RESISTANCE VOLTAGE
ID = 14A
-20-40 20 40 100 140
VGS = 10V
1.25
1.05
0.85
60-60 TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
1.15
0.95
0.75 -20 20 100 160
BREAKDOWN VOLTAGE
0-40 40 80 120 140
ID = 250µA
0 10 100
PF, CAPACITANCE (C)
VDS, DRAIN TO SOURCE VOLTAGE (V)
3000
2400
1800
1200
600
0
CRSS
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
IRF244, IRF245, IRF246, IRF247
5-6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
ID, DRAIN CURRENT (A)
5101520025
15
12
9
0
6
gfs, TRANSCONDUCTANCE (S)
80µs PULSE TEST
3
VDS ≥50V
TJ = 150oC
TJ = 25oC
ISD, SOURCE TO DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
102
10
1
0.10 0.4 0.8 1.2 1.6 2.0
TJ = 25oC
TJ = 150oC
Qg(TOT), TOTAL GATE CHARGE (nC)
12 24 36 48060
4
20
8
VGS, GATE TO SOURCE VOLTAGE (V)
16
VDS = 200V
IC = 14A
VDS = 125V
VDS = 50V
12
0
IRF244, IRF245, IRF246, IRF247
5-7
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
IRF244, IRF245, IRF246, IRF247
