-*
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Urder this data sheet
by MRW5460ZD
Advance information
The RF Line I
IMRW54602
Microwave Linear
Power Transistor
. . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to
4.0 GHz freauencv ranae.
.,-
Designed for Class A, Common-Emitter Linear Power Amplifiers ,i,,j fimfislsTOR
Specified 20 Volt, 2.0 GHz Characteristics: ,:, \
~?:~,,:J,...
.~$~,, .“1},.,e
ICASE 328F-01, STYLE 1I
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~~.>>. ,.,
~~:i,~
MAXIMUM RATINGS .i+tl,?:”
.(*!,$.,,.,,
‘*?J1’”
Rating ~,,.~,- ~,.:;,. Symbol Value
.:,.’:,:~, Unit
Collector-Emitter Voltage ~:;,F
,.,.t.i:,,3:$~ , VCEO 22 Vdc
,ii,’ j.?<
Collector-Base Voltage ‘..,‘:,,,,,.~
~il.\,*\,.,~,.. VCES 50 Vdc
,,..:. -Q,x
Emitter-Base Voltage .}. ~..:..s~’
“!.?,> VEBO 3.5 Vdc
Operating Junction Temperature .,..
,,??i:.’
,,,~,, TJ 200 ‘c
,.,...,.,
Storage Temperature Range >..%.
..:t+,, ‘$*$.-. Tstg – 65 to +200
.,,,., ‘c
.,:~,,?,.*,,.$$*,,
THERMAL CHARACTERISTICS ‘“ ‘~!%,,‘
,.$,,
>,,...*. $>. Symbol Max Unit
ReJC 25 ‘Cw
.V
,.yt.~$*+%,@aracteristic
... Symbol Min Typ Max Unit
OFFCHARACTERISTICS ;* $>:
,,,;t..tl,,h~)\’):\Jr:,,,ii-
,,!. \.,
Collector-Emitter Break~&,~# Voltage V(BR)CEO 22 — —
(lc =20 mA, l~,~~,,o) Vdc ~
Collector-E mi#e##;&&down Voltage V(BR)CES 50 — — Vdc
(1C =20@~w& =o)
Collectff#~$&~rea kdown Voltage V(BR)CBO 45 — — Vdc
(lqjS Z:,&mA, iE =O)
@${$@#ase Breakdown Voltage VBEBO 3.5 — — Vdc
ctor Cutoff Current iCBO — — 0.5 mAdc
ON CHARACTERISTICS
DC Current Gain (1c =200 mA, VCE =5.0 V) hFE 20 —120 —
(continued
This document contains information on anew product. Specifications and information herein are subject to change without notice.
@MOTOROM INC., 1990 ~ADI1774