QSD2030F Plastic Silicon Photodiode Features PIN photodiode Package material and color: black epoxy Package type: T-1 3/4 (5mm lens diameter) High sensitivity Wide reception angle, 40 Peak sensitivity = 880nm Daylight filter Radiant sensitive area: 1.245mm x 1.245mm Package Dimensions 0.195 (4.95) REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN Schematic CATHODE 0.050 (1.25) CATHODE ANODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of 0.010 (0.25) on all non-nominal dimensions unless otherwise specified. (c)2010 Fairchild Semiconductor Corporation QSD2030F Rev. 1.1.1 www.fairchildsemi.com QSD2030F -- Plastic Silicon Photodiode July 2010 Symbol Parameter TOPR Operating Temperature TSTG Storage Temperature TSOL-I TSOL-F Rating Unit -40 to +100 C -40 to +100 C Soldering Temperature (Iron)(2,3,4) 240 for 5 sec C Soldering Temperature (Flow)(2,3) 260 for 10 sec C VBR Reverse Breakdown Voltage 50 V PD Dissipation(1) 100 mW Power Notes: 1. Derate power dissipation linearly 1.33mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical/Optical Characteristics (TA =25C) Symbol Parameter PS Peak Sensitivity Wavelength SR Wavelength Sensitivity Range Test Conditions VF Forward Voltage IF = 80mA ID Reverse Dark Current VR = 10V, Ee = 0 IL Reverse Light Current Ee = 0.5mW/cm2, VR = 5V, = 950nm VO Open Circuit Voltage Ee = 0.5mW/cm2, = 880nm Temperature Coefficient of VO Short Circuit Current TCI Temperature Coefficient of ISC Max. 880 Reception Angle ISC Typ. 700 TCV Min. Ee = 0.5mW/cm2, = 880nm nm 1100 nm 20 1.3 V 10 15 Units nA 25 A 420 mV +0.6 mV / K 50 A +0.3 %/K C Capacitance VR = 0, f = 1MHz, Ee = 0 60 pF tr Rise Time VR = 5V, RL = 50, = 950nm 5 ns tf Fall Time (c)2010 Fairchild Semiconductor Corporation QSD2030F Rev. 1.1.1 5 www.fairchildsemi.com 2 QSD2030F -- Plastic Silicon Photodiode Absolute Maximum Ratings (TA = 25C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. QSD2030F -- Plastic Silicon Photodiode Typical Performance Characteristics IL-Reverse Light Current Voltage (A) Figure 1. Reverse Light Current vs. Emitter Output Power Figure 2. Angular Response 0 55 10 20 30 VR = 5V TA = 25C 50 45 40 40 35 1.0 30 0.9 25 50 0.8 60 20 0.7 15 70 10 80 5 90 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ee-Emitter output power (mw/cm2) Figure 3. Capacitance vs. Reverse Voltage Figure 4. Dark Current vs. Reverse Voltage 14 1.3 1.2 12 TA = 25C ID-Dark Current (nA) Cj-Capacitance (pF) 1.1 10 8 6 4 1.0 0.9 0.8 0.7 0.6 0.5 2 0.4 0.3 0 0 2 4 6 8 10 12 14 16 18 0 20 Vr-Reverse Voltage (V) (c)2010 Fairchild Semiconductor Corporation QSD2030F Rev. 1.1.1 5 10 15 20 25 30 35 VR-Break Down Voltage (V) www.fairchildsemi.com 3 AccuPowerTM Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) n EfficientMaxTM ESBCTM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FlashWriter(R)* FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM Motion-SPMTM OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOS(R) SyncFETTM Sync-LockTM (R) * The Power Franchise(R) TinyBoostTM TinyBuckTM TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* " SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I49 (c)2010 Fairchild Semiconductor Corporation QSD2030F Rev. 1.1.1 www.fairchildsemi.com 4 QSD2030F -- Plastic Silicon Photodiode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.