PD - 97225A IRF6648PbF IRF6648TRPbF l l l l l l l l l DirectFET Power MOSFET RoHs Compliant Lead-Free (Qualified up to 260C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for 5V to 12V outputs Low Conduction Losses Ideal for 24V input Primary Side Forward Converters Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques Typical values (unless otherwise specified) VDSS RDS(on) VGS 5.5m@ 10V 60V max 20V max Qg tot 36nC Qgd Qgs2 Qrr Qoss Vgs(th) 14nC 2.7nC 37nC 21nC 4.0V DirectFET ISOMETRIC MN Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN Description The IRF6648PbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance. Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V VGS ID @ TC = 25C ID @ TC = 70C IDM EAS IAR g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g h Typical RDS(on) (m) 60 ID = 17A 50 40 30 20 T J = 125C 10 T J = 25C 0 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com f f VGS, Gate-to-Source Voltage (V) VDS Max. Units 60 20 86 69 260 47 34 V A mJ A 12.0 ID= 17A 10.0 VDS= 48V VDS= 30V 8.0 6.0 4.0 2.0 0.0 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge (nC) Fig 2. Total Gate Charge vs. Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.082mH, RG = 25, IAS = 34A. 1 08/24/06 IRF6648PbF Electrical Characteristic @ TJ = 25C (unless otherwise specified) Parameter Min. Conditions Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 60 --- --- VDSS/TJ RDS(on) Breakdown Voltage Temp. Coefficient --- 0.076 --- Static Drain-to-Source On-Resistance --- 5.5 7.0 VGS = 0V, ID = 250A V V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 17A i VDS = VGS, ID = 150A VGS(th) Gate Threshold Voltage 3.0 4.0 4.9 V VGS(th)/TJ IDSS Gate Threshold Voltage Coefficient --- -11 --- mV/C Drain-to-Source Leakage Current --- --- 20 A VDS = 60V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 100 nA VGS = 20V Gate-to-Source Reverse Leakage --- --- -100 Forward Transconductance 31 --- --- gfs Qg VDS = 48V, VGS = 0V, TJ = 125C VGS = -20V S VDS = 10V, ID = 17A Total Gate Charge --- 36 50 Qgs1 Pre-Vth Gate-to-Source Charge --- 7.5 --- Qgs2 Post-Vth Gate-to-Source Charge --- 2.7 --- Qgd Gate-to-Drain Charge --- 14 21 ID = 17A Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- 12 --- See Fig. 15 Qsw --- 17 --- Qoss Output Charge --- 21 --- nC RG (Internal) Gate Resistance --- 1.0 --- td(on) Turn-On Delay Time --- 16 --- tr Rise Time --- 29 --- td(off) Turn-Off Delay Time --- 28 --- tf Fall Time --- 13 --- Ciss Input Capacitance --- 2120 --- Coss Output Capacitance --- 600 --- Crss Reverse Transfer Capacitance --- 170 --- Coss Output Capacitance --- 2450 --- = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz Coss Output Capacitance --- 440 --- VGS = 0V, VDS = 48V, f=1.0MHz Min. Typ. Max. Units --- --- VDS = 30V nC VGS = 10V VDS = 16V, VGS = 0V VDD = 30V, VGS = 10Vi ID = 17A ns RG= 6.2 See Fig. 16 & 17 VGS = 0V pF VDS = 25V Diode Characteristics Parameter IS Continuous Source Current ISM Pulsed Source Current MOSFET symbol 81 (Body Diode) A --- --- 260 Conditions showing the integral reverse (Body Diode)g p-n junction diode. TJ = 25C, IS = 17A, VGS = 0V i VSD Diode Forward Voltage --- --- 1.3 trr Reverse Recovery Time --- 31 47 ns TJ = 25C, IF = 17A, VDD = 30V Qrr Reverse Recovery Charge --- 37 56 nC di/dt = 100A/s iSee Fig. 18 V Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF6648PbF Absolute Maximum Ratings e e f Max. Units 2.8 1.8 89 270 -40 to + 150 W Parameter Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG C Thermal Resistance Parameter em km fm RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor e Typ. Max. --- 12.5 --- 1.0 45 --- 1.4 --- Units C/W 0.022 W/C Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 Ci= i/Ri Ci= i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 3 3 C Ri (C/W) i (sec) 0.17199 0.000044 0.67673 0.001660 0.54961 0.007649 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case Notes: Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). www.irf.com R is measured at TJ of approximately 90C. Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF6648PbF 1000 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V VGS 15V 10V 8.0V 7.0V 6.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 BOTTOM 100 10 6.0V 6.0V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 1 1 0.1 1 10 0.1 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 2.0 ID = 86A Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A) VDS = 10V 60s PULSE WIDTH 100 T J = 150C T J = 25C T J = -40C 10 1 0.1 VGS = 10V 1.5 1.0 0.5 2 4 6 8 10 30 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd T J = 25C Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V 25 Typical RDS(on) ( m) Coss = Cds + Cgd Ciss Coss 1000 20 40 60 80 100 120 140 160 Fig 7. Normalized On-Resistance vs. Temperature Fig 6. Typical Transfer Characteristics 10000 -60 -40 -20 0 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Fig 5. Typical Output Characteristics 1000 Crss 20 15 10 5 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 1 V DS, Drain-to-Source Voltage (V) 0 20 40 60 80 100 ID, Drain Current (A) Fig 9. Normalized Typical On-Resistance vs. Drain Current and Gate Voltage www.irf.com IRF6648PbF 1000 T J = 150C T J = 25C T J = -40C 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 100 10 1 1msec 10 10msec 1 Tc = 25C Tj = 150C Single Pulse VGS = 0V 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area Fig 10. Typical Source-Drain Diode Forward Voltage 6.0 Typical VGS(th) , Gate threshold Voltage (V) 90 80 70 ID, Drain Current (A) 1 60 50 40 30 20 10 5.0 4.0 3.0 ID = 150A ID = 250A ID = 1.0mA ID = 1.0A 2.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( C ) T C , Case Temperature (C) Fig 13. Threshold Voltage vs. Temperature Fig 12. Maximum Drain Current vs. Case Temperature EAS , Single Pulse Avalanche Energy (mJ) 200 ID 12A 18A BOTTOM 34A 180 TOP 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6648PbF Current Regulator Same Type as D.U.T. Id Vds 50K Vgs .2F 12V .3F + V - DS D.U.T. Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Current Sampling Resistors Fig 15a. Gate Charge Test Circuit Qgd Qgodr Fig 15b. Gate Charge Waveform V(BR)DSS 15V DRIVER L VDS tp D.U.T V RGSG + V - DD IAS 20V tp A I AS 0.01 Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit LD VDS VDS 90% + VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% Fig 17a. Switching Time Test Circuit 6 10% VGS td(on) tr td(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRF6648PbF D.U.T Driver Gate Drive + + - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent - Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs DirectFET Substrate and PCB Layout, MN Outline (Medium Size Can, N-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D S D G D www.irf.com S D 7 IRF6648PbF DirectFET Outline Dimension, MN Outline (Medium Size Can, N-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. &+/'05+105 /'64+% +/2'4+#. %1&' /+0 /#: /+0 /#: # $ % & ' ( ) * , - . / 4 2 DirectFET Part Marking 8 www.irf.com IRF6648PbF DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7" reel, order IRF6648TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MAX MIN MAX CODE MIN MIN MAX MAX 12.992 6.9 N.C A N.C 177.77 N.C 330.0 N.C 0.795 0.75 N.C B 19.06 20.2 N.C N.C N.C 0.504 0.53 C 0.50 0.520 13.5 12.8 12.8 13.2 0.059 0.059 D N.C 1.5 1.5 N.C N.C N.C 3.937 2.31 E 58.72 100.0 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.488 0.47 11.9 12.4 N.C 0.567 12.01 14.4 H 0.469 0.47 11.9 11.9 0.606 N.C 12.01 15.4 LOADED TAPE FEED DIRECTION CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 7.90 0.319 8.10 0.154 3.90 0.161 4.10 0.469 11.90 0.484 12.30 0.215 5.45 0.219 5.55 0.201 5.10 0.209 5.30 0.256 6.50 0.264 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/06 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/