APTM100A13DG
APTM100A13DG
–
Rev 2 Decembe
r
, 2006
www.microsemi.com 1 - 6
S1
G2
G1
S2
0/VBUS
OUT
VBUS
OUT
VBUS
S1
G1 0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 1000 V
Tc = 25°C 65
ID Continuous Drain Current Tc = 80°C 49
IDM Pulsed Drain current 240
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 156 mΩ
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 24 A
EAR Repetitive Avalanche Energy 30
EAS Single Pulse Avalanche Energy 1300 mJ
VDSS = 1000V
RDSon = 130mΩ typ @ Tj = 25°C
ID = 65A @ Tc = 25°C
Applicatio
n
• Zero Current Switching resonant mode
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate c harge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outsta ndi ng performance at hi gh frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
P
hase leg
with Series diodes
M
OSFET Power Module
APTM100A13DG
APTM100A13DG
–
Rev 2 Decembe
r
, 2006
www.microsemi.com 2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS= 1000V Tj = 25°C 600 µA
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS= 800V Tj = 125°C 2
mA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 32.5A 130 156
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 6mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±450 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 15.2
Coss Output Capacitance 2.6
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.42
nF
Qg Total gate Charge 562
Qgs Gate – Source Charge 75
Qgd Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 65A 363
nC
Td(on) Tur n-on Delay Ti me 9
Tr Rise Time 9
Td(off) Turn-off Delay Time 50
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 65A
RG = 0.5Ω 24
ns
Eon Turn-on Switching Energy 2.13
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBu s = 667V
ID = 65A, RG = 0.5Ω 0.46 mJ
Eon Turn-on Switching Energy 4.4
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBu s = 667V
ID = 65A, RG = 0.5Ω 0.57 mJ
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Repetitive Reverse Voltage 1200 V
Tj = 25°C 150
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 600
µA
IF DC Forward Current Tc = 100°C 120 A
IF = 120A 2.5 3
IF = 240A 3 VF Diode Forward Voltage
IF = 120A Tj = 125°C 1.8
V
Tj = 25°C 265
trr Reverse Recovery Time Tj = 125°C 350 ns
Tj = 25°C 1120
Qrr Reverse Recovery Charge
IF = 120A
VR = 800V
di/dt = 400A/µs
Tj = 125°C 5800 nC
APTM100A13DG
APTM100A13DG
–
Rev 2 Decembe
r
, 2006
www.microsemi.com 3 - 6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.10
RthJC Junction to Case Thermal Resistance Series diode 0.46 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM100A13DG
APTM100A13DG
–
Rev 2 Decembe
r
, 2006
www.microsemi.com 4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
30
60
90
120
150
180
0 4 8 1216202428
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=15&10V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
60
120
180
240
300
360
012345678910
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0 30 60 90 120 150 180
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
V
GS
=10V @ 32.5A
0
10
20
30
40
50
60
70
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM100A13DG
APTM100A13DG
–
Rev 2 Decembe
r
, 2006
www.microsemi.com 5 - 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS
(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID=32.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
1 10 100 1000
VDS , Drain to Source Voltage (V)
ID, Drain Current (A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS =200V
VDS =500V VDS=800V
0
2
4
6
8
10
12
14
0 120 240 360 480 600 720 840
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=65A
TJ=25°C
APTM100A13DG
APTM100A13DG
–
Rev 2 Decembe
r
, 2006
www.microsemi.com 6 - 6
Delay Times vs Current
td(on)
td(off)
0
10
20
30
40
50
60
20 30 40 50 60 70 80 90 100
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
20 30 40 50 60 70 80 90 100
ID, Drain Current (A)
tr and tf (ns)
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
7
8
20 30 40 50 60 70 80 90 100
ID, Drain Current (A)
Switching Energy (mJ)
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
Eon
Eoff
0
1
2
3
4
5
6
012345
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=667V
ID=65A
TJ=125°C
L=100µH
Hard
switching
ZCS
0
50
100
150
200
250
300
10 20 30 40 50 60
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=667V
D=50%
RG=0.5Ω
TJ=125°C
TC=75°C TJ=25°C
TJ=150°C
1
10
100
1000
0.20.40.60.8 1 1.21.41.61.8
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
M icros emi re se rve s the rig ht to cha nge, witho ut notice , t he s pecificatio ns and info rmatio n co nta ine d he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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