ST330CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 720 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AB (E-PUK) RoHS COMPLIANT * Lead (Pb)-free * Designed and qualified for industrial level TYPICAL APPLICATIONS TO-200AB (E-PUK) * DC motor controls * Controlled DC power supplies PRODUCT SUMMARY IT(AV) * AC controllers 720 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2 t UNITS 720 A 55 C 1420 A 25 C 50 Hz 9000 60 Hz 9420 50 Hz 405 60 Hz 370 VDRM/VRRM tq VALUES Typical TJ A kA2s 400 to 1600 V 100 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 ST330C..C VDRM/VRRM, MAXIMUM REPETITIVE PEAK IDRM/IRRM MAXIMUM VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM AND OFF-STATE VOLTAGE V mA V 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 Document Number: 94407 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com 50 www.vishay.com 1 ST330CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 720 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled I2t 55 (75) C t = 10 ms 9000 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing A 1420 t = 10 ms I2 t UNITS DC at 25 C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 720 (350) No voltage reapplied 100 % VRRM reapplied No voltage reapplied 9420 Sinusoidal half wave, initial TJ = TJ maximum 7920 405 370 287 100 % VRRM reapplied 4050 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.91 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.92 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.58 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.57 Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 VTM Maximum holding current IH Typical latching current IL kA2s 262 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 7570 600 TJ = 25 C, anode supply 12 V resistive load 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94407 Revision: 11-Aug-08 ST330CPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 720 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 IGT TJ = 25 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger MAX. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.09 DC operation double side cooled 0.04 DC operation single side cooled 0.02 DC operation double side cooled 0.01 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet C K/W 9800 (1000) N (kg) 83 g TO-200AB (E-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.012 0.011 0.008 0.007 120 0.014 0.012 0.014 0.013 90 0.017 0.015 0.019 0.017 60 0.025 0.022 0.026 0.023 30 0.043 0.036 0.043 0.037 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94407 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST330CPbF Series Vishay High Power Products Phase Control Thyristors ST330C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.09 K/ W 120 110 Conduction Angle 100 30 90 60 90 120 180 80 70 0 50 100 150 200 250 300 350 400 130 ST330C..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 120 110 100 90 80 Conduction Period 70 30 60 60 50 90 120 40 180 30 20 DC 10 0 200 400 600 800 1000 1200 1400 1600 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics ST330C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.09 K/ W 120 110 100 90 Conduction Period 80 70 60 50 40 30 30 60 90 120 180 DC 20 0 100 200 300 400 500 600 700 800 900 Maximum Average On-state Power Loss (W) Average On-state Current (A) 130 1400 180 120 90 60 30 1200 1000 RMS Limit 800 600 Conduction Angle 400 ST330C..C Series TJ = 125C 200 0 0 100 200 300 400 500 600 700 800 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics 130 ST330C..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 120 110 100 90 80 Conduction Angle 70 60 30 50 60 40 90 120 180 30 20 0 200 400 600 800 1000 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics www.vishay.com 4 Maximum Allowable Heatsink Temperature (C) 130 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) (Hockey PUK Version), 720 A 1800 DC 180 120 90 60 30 1600 1400 1200 1000 RMSLimit 800 Conduction Period 600 400 ST330C..C Series TJ = 125C 200 0 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 94407 Revision: 11-Aug-08 ST330CPbF Series 8000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 720 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 7500 7000 6500 6000 5500 5000 4500 ST330C..C Series 4000 3500 1 10 100 9000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 8000 Of Conduc tion May Not Be Maintained. Initial TJ = 125C 7500 No Voltage Reapplied Rated VRRM Reapplied 7000 8500 6500 6000 5500 5000 4500 4000 ST330C..C Series 3500 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25C TJ = 125C 1000 ST330C..C Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/ W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Steady State Value RthJ-hs = 0.09 K/ W (Single Side Cooled) R thJ-hs = 0.04 K/ W (Double Side Cooled) (DC Operation) 0.01 ST330C..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94407 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST330CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 720 A Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 4 ms = 2 ms = 1 ms = 0.66 ms (a) (b) 1 Tj=-40 C Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Frequency Limited by PG(AV) Device: ST330C..C Series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 33 0 C 16 C 1 - PbF 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 - Critical dV/dt: 9 - Lead (Pb)-free None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95075 For technical questions, contact: ind-modules@vishay.com Document Number: 94407 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-200AB (E-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1/15.1 (0.56/0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. Gate terminal for 1.47 (0.06) DIA. pin receptacle 40.5 (1.59) DIA. MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95075 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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