© 2014 IXYS CORPORATION, All Rights Reserved DS100500D(04/14)
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Features
High Blocking Voltage
High Voltage Package
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Laser and X-Ray Generation Systems
IXTT1N450HV
IXTH1N450HV
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 4500 V
VDGR TJ= 25C to 150C, RGS = 1M4500 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C1A
IDM TC= 25C, Pulse Width Limited by TJM 3A
PDTC= 25C 520 W
TJ- 55 ... +150 C
TJM 150 C
Tstg - 55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263HV) 10..65 / 22..14.6 N/lb
MdMounting Torque (TO-247HV) 1.13/10 Nm/lb.in
Weight TO-263HV 2.5 g
TO-247HV 6.0 g
VDSS = 4500V
ID25 = 1A
RDS(on)
80
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
VGS(th) VDS = VGS, ID = 250A 3.5 6.0 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = 3.6kV, VGS = 0V 5 A
VDS = 4.5kV 25 μA
VDS = 3.6kV TJ = 100C 15 μA
RDS(on) VGS = 10V, ID = 50mA, Note 1 80
G = Gate D = Drain
S = Source Tab = Drain
TO-268HV (IXTT)
G
D (Tab)
S
TO-247HV (IXTH)
D (Tab)
G
S
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT1N450HV
IXTH1N450HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 50V, ID = 200mA, Note 1 0.40 0.70 S
Ciss 1700 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 80 pF
Crss 29 pF
RGi Gate Input Resistance 12
td(on) 30 ns
tr 43 ns
td(off) 73 ns
tf 120 ns
Qg(on) 46 nC
Qgs VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 8 nC
Qgd 23 nC
RthJC 0.24 C/W
RthCS TO-247HV 0.21 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 1 A
ISM Repetitive, Pulse Width Limited by TJM 5 A
VSD IF = 1A, VGS = 0V, Note 1 2.0 V
trr IF = 1A, -di/dt = 50A/μs, VR = 100V 1.75 μs
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = 10V, VDS = 500V, ID = 0.5 • ID25
RG = 10 (External)
PINS:
1 - Gate
2 - Source
3 - Drain
TO-268HV Outline
TO-247HV Outline
PINS:
1 - Gate 2 - Source
3, 4 - Drain
EE1
L2
D1
D3
A1
L4
D2
C2
b
2
1
A
H
C
3
D
2 1
ee
A2
L3
L
3
E
RA
QS
A3
e
D
cb
A1
L1
D3
D1
D2
E2
E3
3X
2X
4X
3X
A2
b1
0P
E1
0P1
4
31 2
e1
L
© 2014 IXYS CORPORATION, All Rights Reserved
Fig. 2. Output Characteristics @ TJ = 125ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 20 40 60 80 100 120 140 160
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
5V
7V
Fig . 3 . RDS(on) Normalized to ID = 0.5A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degr ees Cen tigr ade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 0.5A
I
D
= 1A
Fig . 4 . RDS(on) Normalized to ID = 0.5A Value vs.
Dra in Cu rrent
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 0.2 0.4 0.6 0.8 1 1.2
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 20 40 60 80 100 120 140
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6.5V
6V
7V
Fig. 6. Input Admittance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
- 40ºC
25ºC
Fig. 5. Maximum Drain Current v s.
Case Temperature
0.0
0.2
0.4
0.6
0.8
1.0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cen tigr ade
I
D
- A m peres
IXTT1N450HV
IXTH1N450HV
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT1N450HV
IXTH1N450HV
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7 . Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
ID - Amper es
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD - Volts
IS - Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
QG - NanoCoul om bs
VGS - Volts
V
DS
= 1000V
I
D
= 0. 5A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VDS - Volts
Capacitance - Pi coFa rad
s
f
= 1 MH
z
Ciss
Crss
Coss
© 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1N450(H7-P640)10-11-13
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Volts
I
D
- Am peres
T
J
= 150º C
T
C
= 75º C
Sin g le Pu lse
100ms
1ms
100µs
R
DS(on)
Limi
t
10ms
DC
25µs
Fig. 12. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Volts
I
D
- A m peres
T
J
= 15 0ºC
T
C
= 25ºC
Singl e Pul s e
100ms
1ms
100µs
R
DS(on)
Limi
t
10ms
DC
25µs
IXTT1N450HV
IXTH1N450HV
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