-25C D MM 6235605 0004387 7 MESIEG nom NPN Silicon Darlington Transistors T-33-29 BD 643 , BD 645 SIEMENS AKTIENGESELLSCHAF 04387 D BD 647 BD 649 Epibase power darlington transistors (62.5W) BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting area. These darlington transistors for AF applications are outstanding for particularly high current gain. Together with BD 644, BD 646, BD 648, and BD 650, they are particularly suitable for use as complementary AF push-pull output stages. Type Ordering code BD 643 Q62702-D229 BD 643/BD 644 | 062702-D235 BD 645 Q62702-D231 BD 645/BD 646 | 062702-D236 . BD 647 Q62702-D233 BCE Sensing mark BD 647/BD 648 | 062702-D237 aie al raf BD 649 Q62702-D374 i oe to ee BD 649/BD 650 | 062702-D376 ~Teats3| } Insulating nipple | Q62901-B55 6:02 .e 5 Mica washer Q62901-B52 oe Spring washer ; itt 2 A3 DIN 137 Q62902-B63 ee AST, C t Change in dimensional drawings in preparation. 135s sien Maximum ratings Approx. waight 18 g.Dimensions in mm BD 643 | BD 645 | BD 647| BD G49 Collactor-emitter voltage Veco | 45 60 80 100 Vv Collector-base voltage Vepo | 45 60 80 100 Vv Base-emitter voltage VeBo 5 5 5 Vv Collector current Ic 8 8 8 A Collector-peak current (t < 10 ms) Ion, 12 12 12 12 A Base current Ig 150 150 150 150 mA Storage temperature range Tetg -55 to+150 c Junction temperature Tj 150 | 150 150 | 150 C Total power dissipation (Toase S 25C, Vee S 10 V) Prot 62,5 62,5 62,5 62,5 Ww Thermal resistance Junction to ambient air Rina | 380 <80 80 <80 | K/W Junction to case!) Rinse | 32 $2 $2 s2 K/W 1) For insulated mounting: If the mica washer Q62901-B 62 (50 to 90 um) and the insulating nipple Q62901-B 65 are used this value increases by 4 K/W and with grease by 2 K/W. 1810 C-13 433 enka Neither atesaw i 25C ) MM 8235605 0004388 9 MBSIEG - = 7-33-29 _ 25C 043887" D BD 643 BD 645 - SIEMENS AKTIENGESELLSCHAF _ Bp gay BD 649 Static characteristics (Ta_p = 25C) BD 643 | BD 645 | BD 647 | BD 649 Collector cutoff current (Veg = Veamax) Tero <0.2 <0.2 <0.2 <0.2 mA (Vep = Veamax? Tamb = 100C) Icpo <2 <2 <2 <2 mA Collector cutoff current (Vce = 0.5 Veemax) Ieeo <0.5 <0.5 <0.5 <0.5 mA Emitter cutoff current (Veg =5V) Tego < <5 <5 <5 mA Collector-emitter breakdown voltage (Jp = 100 mA)}") Viericeo | >45 >60 <80 >100 |V Collector-base breakdown voltage (Je = 5 mA) Viericao | >45 >60 >80 >100 Vv Emitter-base breakdown voltage (Je = 2 mA) Vienjeso | >5 > >5 >5 V DC current gain (Io = 0.5 A, Vez = 3 V) hee 1500 1500 1500 1500 - (l= 3A, Voce = 3V) hee >750 >750 >750 >750 - (Ig = 6A, Vee = 3 V) hee 750 750 750 750 - Base-emitter forward voltage (Ig = 3A, Vee = 3 V) Vee <2.5 <2.5 <2.5 <2.5 V Collector-emitter saturation voltage (Ig = 3A, Ip = 12 mA) Voesat <2 <2 <2 <2 Vv Forward voitage of the protective diode at; =3A Ve 1.8 1.8 1.8 1.8 Vv Dynamic characteristics (Tamp = 25C) Transition frequency (Io = 3A, Vee =3V, f= 1MHz) fr 7(>1) | 7(>1) | 7(>1) | 7(>1)) | MHz Cutoff frequency in common emitter configuration Ue = 3A; Veg = 3 V) fate 60 60 60 60 kHz 1) t = 200 ps, duty cycle 1%. 434 18ll C-14 ear Argh eet25C D MM 8235605 0004389 0 MMSIEG. 1 1-33-29 _25C 04389 D BD 643 BD 645 SIEMENS AKTIENGESELLSCHAF BD 647 BD 649 Total parm. power dissipation versus temperature Permissible pulse load - Prot = f (Teasels Vee = Parameter kK fhuc= f(t}; v= parameter W BD 643, 8D 645, BD 647, BD 649 W BD 643, BD 645, BD 647, BD 649 80 cu fh tic fas Vee20 to 20V 0 10 40 0 20 w 0 e 0 50 100 150C Pwo ww a! 10s Permissible operating range DC current gain hee = f (Ic) Ip =F Vee) Tease = 25C, v = 0.01 Vor = 3 V: Tease = 28C A BO 643, BD 645, BD 647, BD 649 BD 643, BD 645,.BD 647, BD 649 10 f W 1000 rly 500 300 200 {00 50 30 20 10 10? io 10 10 10V 10! 102 oe 10tma a Vee : ee s 18 12 0-01 43525C D) MM 8235605 0004390 7 MBSIEG 1-33-29 25C 04390 BD 643 BD 645 SIEMENS AKTIENGESELLSCHAF Bp 647 BD 649 Collector current Jc = f (Vac) Collector-emitter saturation voltage Veg = 3 V: Toss = 25C Voesat = f Uc); Ope = 280; Teasa = 25C mA 8D 643, BD 645, BD 647, BD 649 mA 8D 643, BD 645, BD 647, BD 649 10 q 10 10 10 10 Nee Vee sat 436 1813 D=02 _ - eres emir ne