2N6661CSM4
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 3779, ISSUE 3
FEATURES
• Faster switching
• Low Ciss
• Integral Source-Drain Diode
• High Input Impedance and High Gain
DESCRIPTION
This enhancement-mode (normally-off) vertical DMOS FET is
ideally suited to a wide range of switching and amplifying
applications where high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
High Reliability Screening options are available.
N
–
CHANNEL
ENHANCEMENT MODE
MOSFET
VDSS 90V
ID 0.9A
RDS(on) 4.0Ω
CERAMIC LCC3 PACKAGE (MO-041BA)
(Underside View)
PAD 1 – DRAIN PAD 3 – SOURCE
PAD 2 – N/C PAD 4 – GATE
1
23
4
5.59 ± 0.13
(0.22 ± 0.005)
0.23
(0.009) rad.
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
0.23
(0.009) min.
1.27 ± 0.05
(0.05 ± 0.002)
3.81 ± 0.13
(0.15 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated
VDS Drain - Source Voltage 90V
ID Drain Current - Continuous (TC = 25°C) 0.9A
- Continuous (TC = 100°C) 0.7A
IDM Drain Current - Pulsed (Note 1) 3A
VGS Gate - Source Voltage ±20V
Ptot(1) Total Power Dissipation at Tmb ≤ 25°C 6.25W
De-rate Linearly above 25°C 0.050W/°C
Ptot(2) Total Power Dissipation at Tamb ≤ 25°C 0.5W
Tj,Tstg Operating and Storage Junction Temperature Range -55 to +150°C
THERMAL DATA
Rthj-mb Thermal Resistance Junction – Mounting base Max 20 °C/W
Rthj-amb Thermal Resistance Junction - Ambient Max 250 °C/W
NOTES: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle , δ 2%
2N6661CSM4
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 3779, ISSUE 3
STATIC ELECTRICAL RATINGS (Tcase=25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain – Source Breakdown Voltage VGS = 0V ID = 1.0µA 90 - -
VDS = VGS I
D = 1.0mA 0.8 - 2
T
C = 125°C 0.3 - -
VGS(th) Gate – Source threshold Voltage
T
C = -55°C - - 2.5
V
VGS = ±20V VDS = 0V - - ±100
IGSS Gate – Source Leakage Current T
C = 125°C - - ±500 nA
VDS = 72V VGS = 0V - - 1.0
IDSS Zero Gate Voltage Drain Current T
C = 125°C - - 100 µA
ID(on) On – State Drain Current (note 2) VDS = 15V VGS = 10V 1.5 - - A
VGS = 5V ID = 0.3A - - 5.3
VGS = 10V ID = 1.0A - - 4
RDS(on) Drain – Source On Resistance
(note 3)
T
C = 125°C - - 7.5
Ω
VGS = 5V ID = 0.3A - - 1.6
VGS = 10V ID = 1.0A - - 4
VDS(on) Drain – Source On Voltage (note 2)
T
C = 125°C - - 7.5
V
gFS Forward Transconductance (Note 2) V
DS = 7.5V ID = 0.475A 170 - - ms
VSD Diode Forward Voltage (Note 2) V
GS = 0V Is = 0.86A 0.7 - 1.4 V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance - - 50
Coss Output Capacitance - - 40
Crss Reverse Transfer Capacitance
VDS = 25V
f = 1.0MHz VGS = 0V
- - 10
pF
Td(on) Turn-On Delay - - 10
Td(off) Turn-Off Delay Time
VDD = 25V
RGS = 50Ω
ID = 1A
(Note 2) - - 10
ns
