BA892V-02V VISHAY Vishay Semiconductors Band Switching Diodes Description The main purpose of the BA892V-02V is the Band Switching. Biased with a DC forward current for signals at frequencies over 100 MHz up to 3 GHz this diode behaves like a current controlled resistor and not as a diode any more. Depending on the forward current the forward resistance rf can be switched far below 1 , so that the Switch is closed. To open the Switch, the BA892V02V has to be driven in the reverse mode where the BA892V-02V behaves like a small capacitor with high isolation. So typical applications for this Band Switching Diode are mobile and TV-applications. 1 1 2 2 16863 Features * Low forward resistance * Small, space saving SOD523 package with low series inductance * Small capacitance Applications * Band switching up to 3 GHz * Low loss band-switching in TV/VTR tuners Mechanical Data Case: Plastic case (SOD 523) Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7\" reel (8 mm tape), 3 k/Box Parts Table Part BA892V-02V Ordering code BA892V-02V-GS08 Marking A Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 35 V Forward current IF 100 mA Junction temperature Tj 150 C Tstg -55 to +150 C Symbol Value Unit RthJS 100 K/W Storage temperature range Unit Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Junction soldering point Document Number 85640 Rev. 2, 12-Sep-03 Test condition www.vishay.com 1 BA892V-02V VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Symbol Min Reverse voltage Parameter IR = 10 A Test condition VR 35 Reverse current VR = 20 V IR Forward voltage IF = 100 mA VF Diode capacitance f = 1 MHz, VR = 0 CD f = 1 MHz, VR = 1 V CD 0.9 1.2 pF f = 1 MHz, VR = 3 V CD 0.85 1.1 pF f = 100 MHz, IF = 1 mA rf 0.6 f = 100 MHz, IF = 3 mA rf 0.45 0.7 f = 100 MHz, IF = 10 mA rf 0.34 0.5 IF = 10 mA, IR = 6 mA, iR = 3 mA trr 90 Forward resistance Charge carrier life time Typ. Max Unit 20 nA V 1.1 V 1.1 pF ns Typical Characteristics (Tamb = 25 C unless otherwise specified) 100.00 f = 100 MHz 1.4 I F - Forward Current ( mA ) rf - Forward Resistance ( ) 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IF - Forward Current ( mA ) 18340 10.00 1.00 0.10 0.01 0.5 100 Figure 1. Forward Resistance vs. Forward Current 0.8 0.9 1.0 70 f = 1 MHz VR - Reverse Voltage ( V ) CD - Diode Capacitance ( pF ) 0.7 Figure 3. Forward Current vs. Forward Voltage 1.2 1.0 0.8 0.6 0.4 0.2 0 4 8 12 16 20 24 28 VR - Reverse V oltage (V) 18332 Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com 60 50 40 30 20 10 0 0.01 0.0 2 0.6 VF - Forward Voltage ( V ) 18324 18328 0.1 1.0 10 100 1000 IR - Reverse Current ( A ) Figure 4. Reverse Voltage vs. Reverse Current Document Number 85640 Rev. 2, 12-Sep-03 BA892V-02V VISHAY Vishay Semiconductors 12 I F - Forward Current ( mA ) 10 IF = 10 mA IR = 6 mA i rr = 3 mA 8 6 4 2 0 -2 -4 -6 -8 -50 0 50 100 150 200 Recovery Time ( ns ) 18336 Figure 5. Typical Charge Recovery Curve Package Dimensions in mm ISO Method E 16864 Document Number 85640 Rev. 2, 12-Sep-03 www.vishay.com 3 BA892V-02V VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85640 Rev. 2, 12-Sep-03