VISHAY
BA892V-02V
Document Number 85640
Rev. 2, 12-Sep-03
Vishay Semiconductors
www.vishay.com
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16863
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Band Switching Diodes
Description
The main purpose of the BA892V-02V is the Band
Switching. Biased with a DC forward current for sig-
nals at frequencies over 100 MHz up to 3 GHz this
diode behaves like a current controlled resistor and
not as a diode any more.
Depending on the forward current the forward resis-
tance rf can be switched far below 1 Ω, so that the
Switch is closed. To open the Switch, the BA892V-
02V has to be driven in the reverse mode where the
BA892V-02V behaves like a small capacitor with high
isolation. So typical applications for this Band Switch-
ing Diode are mobile and TV-applications.
Features
• Low forward resistance
• Small, space saving SOD523 package with low
series inductance
• Small capacitance
Applications
• Band switching up to 3 GHz
• Low loss band-switching in TV/VTR tuners
Mechanical Data
Case: Plastic case (SOD 523)
Weight: 1.5 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS08 / 3 k per 7\" reel (8 mm tape), 3 k/Box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part Ordering code Marking Remarks
BA892V-02V BA892V-02V-GS08 ATape and Reel
Parameter Test condition Symbol Value Unit
Reverse voltage VR35 V
Forward current IF100 mA
Junction temperature Tj150 °C
Storage temperature range Tstg -55 to +150 °C
Parameter Test condition Symbol Value Unit
Junction soldering point RthJS 100 K/W
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Document Number 85640
Rev. 2, 12-Sep-03
VISHAY
BA892V-02V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Ty p. Max Unit
Reverse voltage IR = 10 µA VR35 V
Reverse current VR = 20 V IR20 nA
Forward voltage IF = 100 mA VF1.1 V
Diode capacitance f = 1 MHz, VR = 0 CD1.1 pF
f = 1 MHz, VR = 1 V CD0.9 1.2 pF
f = 1 MHz, VR = 3 V CD0.85 1.1 pF
Forward resistance f = 100 MHz, IF = 1 mA rf0.6 Ω
f = 100 MHz, IF = 3 mA rf0.45 0.7 Ω
f = 100 MHz, IF = 10 mA rf0.34 0.5 Ω
Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA trr 90 ns
Figure 1. Forward Resistance vs. Forward Current
Figure 2. Diode Capacitance vs. Reverse Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 1.0 10 100
18340
f = 100 MHz
r - Forward Resistance ( )
f
I
F
- Forward Current ( mA )
Ω
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 4 8 12 16 20 24 28
18332
VR- Reverse V oltage (V)
C - Diode Capacitance ( pF )
D
f=1MHz
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Reverse Voltage vs. Reverse Current
0.01
0.10
1.00
10.00
100.00
0.5 0.6 0.7 0.8 0.9 1.0
I - Forward Current ( mA )
V
F
- Forward Voltage(V)
18324
F
0
10
20
30
40
50
60
70
0.01 0.1 1.0 10 100 1000
I
R
- Reverse Current ( µA)
18328
V - Reverse Voltage(V)
R
VISHAY
BA892V-02V
Document Number 85640
Rev. 2, 12-Sep-03
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm
Figure 5. Typical Charge Recovery Curve
-8
-6
-4
-2
0
2
4
6
8
10
12
-50 0 50 100 150 200
18336
Recovery Time ( ns )
I - Forward Current ( mA )
F
IF=10mA
IR=6mA
irr =3mA
16864
ISO Method E
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Document Number 85640
Rev. 2, 12-Sep-03
VISHAY
BA892V-02V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
