© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 1 1Publication Order Number:
TVS4201MR6/D
TVS4201MR6
Transient Voltage
Suppressors
Low Clamping Voltage Surge Protection
Diode Array
The TVS4201MR6 transient voltage suppressor is designed to
protect high speed data lines from ESD, EFT, and lightning surges.
Features
Protection for the Following IEC Standards:
IEC 61000−4−2 (ESD) ±30 kV (Contact)
IEC 61000−4−5 (Lightning) 25 A (8/20 ms)
Low Clamping Voltage
Low Leakage
UL Flammability Rating of 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
High Speed Communication Line Protection
USB 1.1 and 2.0 Power and Data Line Protection
Digital Video Interface (DVI)
Monitors and Flat Panel Displays
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Power Dissipation
8/20 ms @ TA = 25°C (Note 1) Ppk 500 W
Operating Junction Temperature Range TJ40 to +125 °C
Storage Temperature Range Tstg 55 to +150 °C
Lead Solder Temperature −
Maximum (10 Seconds) TL260 °C
IEC 61000−4−2 Air (ESD)
IEC 61000−4−2 Contact (ESD) ESD ±30
±30 kV
IEC 61000−4−4 (5/50 ns) EFT 40 A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Non−repetitive current pulse per Figure 1 (Pin 5 to Pin 2)
See Application Note AND8308/D for further description of
survivability specs.
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
TSOP−6
CASE 318G
1
6
PIN CONFIGURATION AND SCHEMATIC
6 I/O
5 VP
4 I/O
I/O 1
VN 2
I/O 3
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42 = Specific Device Code
M = Date Code
G= Pb−Free Package
42 MG
G
TVS4201MR6T1G TSOP−6
(Pb−Free) 3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Date Code orientation may vary
depending upon manufacturing location.
SZTVS4201MR6T1G TSOP−6
(Pb−Free) 3000 / Tape &
Reel
(Note: Microdot may be in either location)
TVS4201MR6
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2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
Ppk Peak Power Dissipation
CCapacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage VRWM (Note 2) 5.0 V
Breakdown Voltage VBR IT=1 mA, (Note 3) 6.0 V
Reverse Leakage Current IRVRWM = 5 V 1.0 mA
Clamping Voltage
(tp = 8/20 ms per Figure 1) VCIPP = 1 A, Any I/O to GND 8.5 V
IPP = 5 A, Any I/O to GND 9.0
IPP = 8 A, Any I/O to GND 10
IPP = 25 A, Any I/O to GND 12
Junction Capacitance CJVR = 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF
Junction Capacitance CJVR = 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
Figure 1. IEC61000−4−5 8/20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
Figure 2. Clamping Voltage vs. Peak Pulse Current
(tp = 8/20 ms per Figure 1)
20
10
005
PEAK PULSE CURRENT (A)
CLAMPING VOLTAGE (V)
10 15 20 25
18
8
16
6
14
4
12
2
30
I/O−GND
TVS4201MR6
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3
Figure 3. IEC61000−4−2 +8 kV Contact Clamping
Voltage Figure 4. IEC61000−4−2 −8 kV Contact Clamping
Voltage
TIME (ns)
VOLTAGE (V)
−20
0
20
40
60
80
100
−20 0 20 40 60 80 100 120 140 TIME (ns)
VOLTAGE (V)
−100
−80
−60
−40
−20
0
20
−20 0 20 40 60 80 100 120 140
IEC 61000−4−2 Spec.
Level Test Volt-
age (kV)
First Peak
Current
(A) Current at
30 ns (A) Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
Ipeak
90%
10%
IEC61000−4−2 W aveform
100%
I @ 30 ns
I @ 60 ns
tP = 0.7 ns to 1 ns
Figure 5. IEC61000−4−2 Spec
Figure 6. Diagram of ESD Test Setup
50 W
50 W
Cable
TVS Oscilloscope
ESD Gun
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
TVS4201MR6
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4
TYPICAL PERFORMANCE CUR VES
(TJ = 25°C unless otherwise noted)
Figure 7. Pulse Derating Curve
100
90
80
70
60
50
40
30
20
10
00 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Junction Capacitance vs Reverse Voltage
5.0
2.5
0.0 01
VBR, REVERSE VOLTAGE (V)
JUNCTION CAPACITANCE (pF)
234
5
I/O−I/O
I/O−GND
PEAK POWER DISSIPATION (%)
4.5
2.0
4.0
1.5
3.5
1.0
3.0
0.5
Figure 9. RF Insertion Loss
TVS4201MR6
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5
TYPICAL APPLICATIONS
Figure 10. Protection for Ethernet 10/100 (Differential mode)
PHY
Ethernet
(10/100)
Coupling
Transformers
TVS4201MR6
RJ45
Connector
N/C N/C
TX+
TX−
RX+
RX−
TX+
TX−
RX+
RX−
GND
VCC
T1/E1
TRANCEIVER
RTIP
RRING
TRING
TTIP
R1
R2 R3
R4
R5
T1
T2
TVS4201MR6
VCC
Figure 11. TI/E1 Interface Protection
TVS4201MR6
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6
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
ÉÉ
ÉÉ
23
456
D
1
eb
E1
A1
A
0.05
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
c
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
AMIN NOM MAX
MILLIMETERS
0.90 1.00 1.10
A1 0.01 0.06 0.10
b0.25 0.38 0.50
c0.10 0.18 0.26
D2.90 3.00 3.10
E2.50 2.75 3.00
e0.85 0.95 1.05
L0.20 0.40 0.60
0.25 BSC
L2
0°10°
1.30 1.50 1.70
E1
E
RECOMMENDED
NOTE 5
LC
M
H
L2
SEATING
PLANE
GAUGE
PLANE
DETAIL Z
DETAIL Z
0.60
6X
3.20 0.95
6X
0.95
PITCH
DIMENSIONS: MILLIMETERS
M
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
TVS4201MR6/D
LITERATURE FULFILLMENT:
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P.O. Box 5163, Denver, Colorado 80217 USA
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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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