BC817 BC818 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BC818 BC818-16 BCB18-25 BC818-40- 6HZ 6EZ 6FZ 6GZ E c B & COMPLEMENTARY TYPES - BC807 BC817 - BC808 BC818 ABSOLUTE MAXIMUM SOT23 RATINGS. I PARAMETER ISYMBOL Collector-Base Voltage BC817 1Ptot Operating and Storage Temperature Range /Tl:TdO 8C818 UNIT 30 v 50 `CBO Power Dksipation at Tamb=250C 330 mW -55 to +150 "c ELECTRICAL CHARACTERISTICS (at T*~h = 25C unless otherwise stated]. PARAMETER SYMBOL Collector Cut-Off Currant Icao Emitter Cut-Off Current Collector-Emitter Saturation Voltage MIN. TYP. MAX. UNIT CONDITIONS. 0.1 5 $ Vcr20V, IEBO 10 PA VES=5V, l~o v CEk.at) 700 mV l~500mA, `C~20v, `E=o 1=0, Tamb=l50"C lB=50mA" Base-Emitter Turn-on Voltage Static Forward Currant Transfer Ratio ,-16 I I 0 ISSUE 4- hine 1996 PARTMARKING DETAILS - 6DZ BC817 BC817-16 - 6AZ BC817-25 - 6BZ BC817-40- 6CZ ; , .= 100 250 l~100mA, V&IV* -25 160 400 l~100mA, VFIV* -40 250 600 l~100mA, V&l Transition Fraquency fT 200 MHZ lelOmA, Vcr5V f=35MHz Collector-base Capacitance c ok 5.0 pF lE=le=o,Vcs=l Ov f=l MHz Measured under pulsed conditions. Pulse width=300ps. Duty cycle< 2% 3-10 V* 1