SOT23 NPN SILICON PLANAR BC817
MEDIUM POWER TRANSISTORS BC818
ISSUE 4- hine 1996 0II
PARTMARKING DETAILS
BC817 -6DZ BC818 -6HZ
BC817-16 -6AZ BC818-16 -6EZ c
&
E
BC817-25 -6BZ BCB18-25-6FZ
BC817-40- 6CZ BC818-40- 6GZ B
COMPLEMENTARY TYPES
BC817 -BC807
BC818 -BC808 SOT23
ABSOLUTE MAXIMUM RATINGS.
IPARAMETER ISYMBOL BC817 8C818 UNIT 1
Collector-Base Voltage ‘CBO 50 30 v
Power Dksipation at Tamb=250C 1P
tot 330 mW
Operating and Storage Temperature Range /Tl:TdO -55 to +150 “c
ELECTRICAL CHARACTERISTICS (at T*~h =25°C unless otherwise stated].
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off Icao 0.1
Currant 5‘C~20v, ‘E=o
$Vcr20V, 1=0, Tamb=l50”C
Emitter Cut-Off Current IEBO 10 PA VES=5V, l~o
Collector-Emitter vCEk.at) 700 mV l~500mA, lB=50mA”
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Currant
Transfer Ratio,- ;,.=
-16 100 250 l~100mA, V&IV*
-25 160 400 l~100mA, VFIV*
-40 250 600 l~100mA, V&l V*
Transition fT 200 MHZ lelOmA, Vcr5V
Fraquency f=35MHz
Collector-base cok 5.0
Capacitance pF lE=le=o,Vcs=l Ov
f=l MHz
Measured under pulsed conditions. Pulse width=300ps. Duty cycle< 2%
3-10
