ESM4045DV
NPN DARLINGTON POWER MODULE
■HIGH CURRENT POWER BIPOLAR MODULE
■VERY LOW Rth JUNCTI O N CA SE
■SPE CIF IED ACCI DE NTA L OVERLOAD
AREAS
■ULTRAF A ST FREE W HEE LIN G DIOD E
■INSU LA TE D PA CKAG E (UL COMP LIA NT )
■EASY TO MOUNT
■LOW INTERNAL PARASI TIC INDUCTANCE
APPLICATIONS:
■MOTOR CONTROL
■SMPS & UPS
■DC/DC & DC/AC CONVERTERS
■WELDING EQUIPMENT
INTERNAL SCHEMATI C DIAG RAM
September 2003
ISOTOP
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -5 V) 600 V
VCEO(sus) Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 42 A
ICM Collector Peak Current (tp = 10 ms) 63 A
IBBase Current 4 A
IBM Base Peak Current (tp = 10 ms) 8 A
Ptot Total Dissipation at Tc = 25 oC 150 W
Tstg Storage Temperature -55 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-case
Rthj-case
Rthc-h
Thermal Resistance Junction-case (transistor) Max
Thermal Resistance Junction-case (diode) Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.83
1.5
0.05
oC/W
oC/W
oC/W
ELE CT RICAL CHAR ACT ERIST I CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICER # Collector Cut-off
Current (RBE = 5 Ω)VCE = VCEV
VCE = VCEV Tj = 100 oC1.5
20 mA
mA
ICEV # Collector Cut-off
Current (VBE = -5) VCE = VCEV
VCE = VCEV Tj = 100 oC 1
13 mA
mA
IEBO # Emitter Cut-off Current
(IC = 0) VEB = 5 V 1 mA
VCEO(SUS)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A L = 25 mH
Vclamp = 450 V 450 V
hFE∗DC Current Gain IC = 35 A VCE = 5 V 220
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 25 A IB = 0.5 A
IC = 25 A IB = 0.5 A Tj = 100 oC
IC = 35 A IB = 2 A
IC = 35 A IB = 2 A Tj = 100 oC
1.15
1.3
1.4
1.5
2
2
V
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 35 A IB = 2 A
IC = 35 A IB = 2 A Tj = 100 oC2.3
2.3 3 V
V
diC/dt Rate of Rise of
On-state Collector VCC = 300 V RC = 0 tp = 3 µs
IB1 = 0.75 A Tj = 100 oC200 250 A/µs
VCE(3 µs) Collector-Emitter
Dynamic Voltage VCC = 300 V RC = 12 Ω
IB1 = 0.75 A Tj = 100 oC4.5 8 V
VCE(5 µs) Collector-Emitter
Dynamic Voltage VCC = 300 V RC = 12 Ω
IB1 = 0.75 A Tj = 100 oC2.5 4.5 V
ts
tf
tc
Storage Time
Fall Time
Cross-over Time
IC = 25A VCC = 50 V
VBB = -5 V RBB = 0.6 Ω
Vclamp = 450 V IB1 = 0.5 A
L = 0.1 mH Tj = 100 oC
3.2
0.25
0.75
5
0.5
1.5
µs
µs
µs
VCEW Maximum Collector
Emitter Voltage
Without Snubber
ICWoff = 42 A IB1 = 2 A
VBB = -5 V VCC = 50 V
L = 0.06 mH RBB = 0.6 Ω
Tj = 125 oC
450 V
VF∗Diode Forward Voltage IF = 35 A Tj = 100 oC 1.5 1.85 V
IRM Reverse Recovery
Current VCC = 200 V IF = 35 A
diF/dt = -200 A/µs L < 0.05 µH
Tj = 100 oC
20 24 A
∗ Pulsed: P ulse duratio n = 300 µs, duty cycle 1.5 %
To ev aluat e the conduc tion loss es of the diode use the following equations :
VF = 1.5 + 0.0 01 IF P = 1.5 IF(AV) + 0.001 I2F(RMS)
# See test circuits in databook int roduct io n
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Safe O perat ing Areas
D erating Curve
C ollec tor E mit ter Saturation Volt age
Thermal Impedance
Collector- emit ter Volt age Versus
bas e-emit ter Resis tance
Base-Emitter Saturation Voltage
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Reverse Biased SOA
Reverse Biased AOA
Switching Times Inductive Load
Foward Bias ed SOA
Forward Biased AOA
Switching Times Inductive Load Versus
Temperature
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Turn-on Swit ching Wavefor ms
Dc Current Gain Typical VF Versus I F
Peak Rever se Current Versus diF/dt Turn-on Switc hing Test Circuit
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Turn-on Switching Test Circuit Turn- off Switching Wavef orms
Turn-off Switching Test Circuit of Diode Turn- off Switching Wavef orm of Diode
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.465 0.480
A1 8.9 9.1 0.350 0.358
B 7.8 8.2 0.307 0.322
C 0.75 0.85 0.029 0.033
C2 1.95 2.05 0.076 0.080
D 37.8 38.2 1.488 1.503
D1 31.5 31.7 1.240 1.248
E 25.15 25.5 0.990 1.003
E1 23.85 24.15 0.938 0.950
E2 24.8 0.976
G 14.9 15.1 0.586 0.594
G1 12.6 12.8 0.496 0.503
G2 3.5 4.3 0.137 1.169
F 4.1 4.3 0.161 0.169
F1 4.6 5 0.181 0.196
P 4 4.3 0.157 0.169
P1 4 4.4 0.157 0.173
S 30.1 30.3 1.185 1.193
P093A
ISOTOP MECHANICAL DATA
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