2N6520 - ON Semiconductor - Datasheet.Directory

High Voltage Transistors

MAXIMUM RATINGS

Rating Symbol 2N6515 2N6519 2N6517

2N6520 Unit

Collector–Emitter Voltage VCEO 250 300 350 Vdc

Collector–Base Voltage VCBO 250 300 350 Vdc

Emitter–Base Voltage

2N6515, 2N6516, 2N6517

2N6519, 2N6520

VEBO 6.0

5.0

Vdc

Base Current IB250 mAdc

Collector Current — Continuous IC500 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RJA 200 °C/W

Thermal Resistance, Junction to Case RJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0 ) 2N6515

2N6519

2N6517, 2N6520

V(BR)CEO 250

300

350

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100 µAdc, IE = 0 ) 2N6515

2N6519

2N6517, 2N6520

V(BR)CBO 250

300

350

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 µAdc, IC = 0) 2N6515, 2N6517

2N6519, 2N6520

V(BR)EBO 6.0

5.0 —

—

Vdc

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

 Semiconductor Components Industries, LLC, 2001

February, 2001 – Rev. 2 1Publication Order Number:

2N6515/D

NPN

2N6515

2N6517

PNP

2N6519

2N6520

CASE 29–04, STYLE 1

T O–92 (TO–226AA)

123

Voltage and current are negative

for PNP transistors

COLLECTOR

BASE

EMITTER

COLLECTOR

BASE

EMITTER

NPN PNP

NPN 2N6515 2N6517 PNP 2N6519 2N6520

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS (Continued)

Collector Cutoff Current

(VCB = 150 Vdc, IE = 0) 2N6515

(VCB = 200 Vdc, IE = 0) 2N6519

(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520

ICBO —

—

nAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517

(VEB = 4.0 Vdc, IC = 0) 2N6519, 2N6520

IEBO —

—50

nAdc

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515

2N6519

2N6517, 2N6520

(IC = 10 mAdc, VCE = 10 Vdc) 2N6515

2N6519

2N6517, 2N6520

(IC = 30 mAdc, VCE = 10 Vdc) 2N6515

2N6519

2N6517, 2N6520

(IC = 50 mAdc, VCE = 10 Vdc) 2N6515

2N6519

2N6517, 2N6520

(IC = 100 mAdc, V CE = 10 Vdc) 2N6515

2N6519

2N6517, 2N6520

hFE 35

—

300

270

200

220

200

—

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat) —

—

0.30

0.35

0.50

1.0

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

VBE(sat) —

—

0.75

0.85

0.90

Vdc

Base–Emitter On Voltage

(IC = 100 mAdc, V CE = 10 Vdc) VBE(on) — 2.0 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product(1)

(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT40 200 MHz

Collector–Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb — 6.0 pF

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517

2N6519, 2N6520

Ceb —

—80

100

SWITCHING CHARACTERISTICS

Turn–On Time

(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton — 200 µs

Turn–Off Time

(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff — 3.5 µs

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

NPN 2N6515 2N6517 PNP 2N6519 2N6520

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Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

hFE, DC CURRENT GAIN

200

100

VCE = 10 V TJ = 125°C

25°C

-55°C

2N6515

NPN

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

hFE, DC CURRENT GAIN

200

100

VCE = -10 V TJ = 125°C

25°C

-55°C

2N6519

PNP

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

200

100

VCE = 10 V TJ = 125°C

25°C

-55°C

2N6517

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

VCE = -10 V

TJ = 125°C

25°C

-55°C

2N6520

Figure 3. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

100

2N6515, 2N6517

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

2N6519, 2N6520

f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)

hFE, DC CURRENT GAIN

100

TJ = 25°C

VCE = 20 V

f = 20 MHz

TJ = 25°C

VCE = -20 V

f = 20 MHz

200

100

NPN 2N6515 2N6517 PNP 2N6519 2N6520

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Figure 4. “On” Voltages

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

V, VOLTAGE (VOLTS)

1.4

1.2

0.6

0.8

1.0

2N6515, 2N6517

NPN

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

2N6519, 2N6520

PNP

Figure 5. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

2.5

2N6515, 2N6517

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

2N6519, 2N6520

Figure 6. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

2000.2 0.5 1.0 2.0 5.0 10 20 50 100

100

2.0

3.0

5.0

2N6515, 2N6517

VR, REVERSE VOLTAGE (VOLTS)

2N6519, 2N6520

C, CAPACITANCE (pF)

1.0

V, VOLTAGE (VOLTS)

0.4

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0

-1.4

-1.2

-0.6

-0.8

-1.0

-0.4

-0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = -10 V

VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0

RV, TEMPERATURE COEFFICIENTS (mV/ C)°

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

-2.5

RθVC for VCE(sat)

RθVB for VBE

25°C to 125°C

-55°C to 25°C

-55°C to 125°C

IB 10

RθVC for VCE(sat)

RθVB for VBE

25°C to 125°C

-55°C to 25°C

-55°C to 125°C

IB 10

C, CAPACITANCE (pF)

7.0

-200-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

TJ = 25°C TJ = 25°C

Ccb

Ceb

Ccb

Ceb

2.5

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

-2.5

100

2.0

3.0

5.0

1.0

7.0

NPN 2N6515 2N6517 PNP 2N6519 2N6520

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Figure 7. Turn–On Time

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

t, TIME (ns)

1.0k

2N6515, 2N6517

NPN

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

2N6519, 2N6520

PNP

Figure 8. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

2N6515, 2N6517

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

2N6519, 2N6520

100

200

300

500

700

t, TIME (ns)

td @ VBE(off) = 2.0 V

VCE(off) = 100 V

IC/IB = 5.0

TJ = 25°C

td @ VBE(off) = 2.0 V

VCE(off) = -100 V

IC/IB = 5.0

TJ = 25°C

t, TIME (ns)

10k

100

200

300

500

700

1.0k

2.0k

3.0k

5.0k

7.0k

100

200

300

500

700

1.0k

2.0k

VCE(off) = 100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

VCE(off) = -100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

1.0k

100

200

300

500

700

NPN 2N6515 2N6517 PNP 2N6519 2N6520

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Figure 9. Switching Time Test Circuit

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

(),

RESISTANCE (NORMALIZED)

10k0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k

t, TIME (ms)

Figure 10. Thermal Response

500

200

100

5.0

2.0

1.0

0.5

IC, COLLECTOR CURRENT (mA)

0.5 1.0 2.0 5.0 10 20 50 100 200 500

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 11. Active Region Safe Operating Area Design Note: Use of T ransient Thermal Resistance Data

FIGURE A

PPPP

1/f

DUTYCYCLE t1f 

PEAK PULSE POWER = PP

TA = 25°C

1.0 ms

10 µs

TC = 25°C

100 µs

100 ms

+10.8 V

-9.2 V

+VCC

2.2 k 20 k

50 Ω SAMPLING SCOPE

1/2MSD7000

1.0 k

VCC ADJUSTED

FOR VCE(off) = 100 V

APPROXIMATELY

-1.35 V (ADJUST FOR V(BE)off = 2.0 V)

PULSE WIDTH ≈ 100 µs

tr, tf ≤ 5.0 ns

DUTY CYCLE ≤ 1.0%

FOR PNP TEST CIRCUIT,

REVERSE ALL VOLTAGE POLARITIES

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t)

ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t)

CURRENT LIMIT

THERMAL LIMIT

(PULSE CURVES @ TC = 25°C)

SECOND BREAKDOWN LIMIT

CURVES APPLY

BELOW RATED VCEO

2N6515

2N6519

2N6517, 2N6520

PACKAGE DIMENSIONS

NPN 2N6515 2N6517 PNP 2N6519 2N6520

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NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

HSECTION X–X

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.022 0.41 0.55

F0.016 0.019 0.41 0.48

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

CASE 029–04

(TO–226AA)

ISSUE AD

NPN 2N6515 2N6517 PNP 2N6519 2N6520

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