BC556xBK ... BC559xBK
BC556xBK ... BC559xBK
PNP General Purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP
Version 2009-12-07
Dimensions - Maße [mm]
Power dissipation – Verlustleistung 500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Special packaging bulk
Sonder-Lieferform Schüttgut
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
BC556 BC557 BC558/559
Collector-Emitter-voltage E-B short - VCES 80 V 50 V 30 V
Collector-Emitter-voltage B open - VCEO 65 V 45 V 30 V
Collector-Base-voltage E open - VCBO 80 V 50 V 30 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 500 mW 1)
Collector current – Kollektorstrom (dc) - IC100 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 µA hFE typ. 90 typ. 150 typ. 270
- VCE = 5 V, - IC = 2 mA hFE 110 ... 220 200 ... 450 420 ... 800
- VCE = 5 V, - IC = 100 mA hFE typ. 120 typ. 200 typ. 400
h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung hfe typ. 220 typ. 330 typ. 600
Input impedance – Eingangs-Impedanz hie 1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ
Output admittance – Ausgangs-Leitwert hoe 18 < 30 µS 30 < 60 µS 60 < 110 µS
Reverse voltage transfer ratio
Spannungsrückwirkung hre typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG http://www.diotec.com/ 1
2 x 1.27
CB E
4.6
±0.1
4.6
±0.1
min 12.5
BC556xBK ... BC559xBK
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 80 V, (B-E short)
- VCE = 50 V, (B-E short)
- VCE = 30 V, (B-E short)
BC546
BC547
BC548 / BC549
- ICES
- ICES
- ICES
–
–
–
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
- VCE = 80 V, Tj = 125°C, (B-E short)
- VCE = 50 V, Tj = 125°C, (B-E short)
- VCE = 30 V, Tj = 125°C, (B-E short)
BC546
BC547
BC548 / BC549
- ICES
- ICES
- ICES
–
–
–
–
–
–
4 µA
4 µA
4 µA
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VCEsat
- VCEsat
–
–
80 mV
250 mV
300 mV
650 mV
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VBEsat
- VBEsat
–
–
700 mV
900 mV
–
–
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
- VBE
- VBE
600 mV
–
660 mV
–
750 mV
800 mV
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz fT– 150 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – 3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 – 10 pF –
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC556 ... BC558
BC559
F
F
–
–
2 dB
1 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BC546 ... BC549
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC556A
BC557A
BC558A
BC556B
BC557B
BC558B
BC559B
BC557C
BC558C
BC559C
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2http://www.diotec.com/ © Diotec Semiconductor AG
