2N5088
2N5089
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5088 and
2N5089 are silicon NPN transistors designed for low
level, low noise amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N5088 2N5089 UNITS
Collector-Base Voltage VCBO 35 30 V
Collector-Emitter Voltage VCEO 30 25 V
Emitter-Base Voltage VEBO 4.5 V
Continuous Collector Current IC 50 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JA 200 °C/W
Thermal Resistance JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N5088 2N5089
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=20V - 50 - - nA
ICBO V
CB=15V - - - 50 nA
IEBO V
EB=3.0V - 50 - 50 nA
IEBO V
EB=4.5V - 100 - 100 nA
BVCBO I
C=100μA 35 - 30 - V
BVCEO I
C=1.0mA 30 - 25 - V
VCE(SAT) I
C=10mA, IB=1.0mA - 0.5 - 0.5 V
VBE(ON) V
CE=5.0V, IC=10mA - 0.8 - 0.8 V
hFE V
CE=5.0V, IC=0.1mA 300 900 400 1.2K
hFE V
CE=5.0V, IC=1.0mA 350 - 450 -
hFE V
CE=5.0V, IC=10mA 300 - 400 -
hfe V
CE=5.0V, IC=1.0mA, f=1.0kHz 350 1.4K 450 1.8K
fT V
CE=5.0V, IC=0.5mA, f=20MHz 50 - 50 - MHz
Cob V
CB=5.0V, IE=0, f=100kHz - 4.0 - 4.0 pF
Cib V
EB=0.5V, IC=0, f=100kHz - 15 - 15 pF
NF VCE=5.0V, IC=100μA, RS=10kΩ,
f=10Hz to 15.7kHz - 3.0 - 2.0 dB
TO-92 CASE
R1 (20-June 2016)
www.centralsemi.com
2N5088
2N5089
SILICON
NPN TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (20-June 2016)
R1 (20-June 2016)
www.centralsemi.com
TYPICAL ELECTRICAL CHARACTERISTICS
2N5088
2N5089
SILICON
NPN TRANSISTORS
R1 (20-June 2016)
www.centralsemi.com
TYPICAL ELECTRICAL CHARACTERISTICS
2N5088
2N5089
SILICON
NPN TRANSISTORS
