Ordering number: EN 1049D , 2SA1253/2SC3135 PNP/ NPN Epitaxial Planar Silicon Transistors No.1049D 7 Vly (0) High-hpz,AF Amp Applications Features High VEBO . Wide ASO and high durability against breakdown ( }: 2SA1253 Absolute Maximum Ratings/T, = 25C unit Collector to base voltage VcBo ()60 Vv Collector to emitter voltage VCEO ()50 v Emitter to base voltage VEBO ()15 v Collector current Ic (-)200 mA Collector Current(Pulse) Iop (-}400 mA Collector dissipation Pc 250 mW Junction temperature Tj 150 C Storage temperature Tstg 55to+150 C" Electrical Characteristics/Ta = 25C min typ max unit Collector cutoff current IcBoO Vcp = (-)40V, le =0 - (-)0.1 pA Emitter cutoff current lEBO Vep =(-)10 V, Ic=0 (-)0.1 uA DC current gain hFE Vce = (-)6 V, Ic =(-)1 mA 100* 560* Gain-bandwidth product fT VceE = (-)6 V, Ic = (-)1 mA 100 MHz Common base output capacitance Cob Vcs = ()6 V, f = 1MHz (3.8) pF 2.5 Collector to emitter saturation voltage VCE(sat) Ic = (-)50 mA, IB = ()5 mA (-0.2) (-)0.5 V . 0.15 Collector to base breakdown voltage V(BR)CBO Ic=()10 HA, IE =0 ()60 Vv Collector to emitter breakdown voltage V(BR)CEO Ic = ()1 mA, RBE = ()50 Vv Emitter to base breakdown voltage ViBR)EBO IE = (-) 10HA, IC=0 ()15 Vv * The 2SA1253/2SC3135 are classified by 1 mA hEE as follows: [100 R 200 | 140 s 280 | 200 T 400 | 280 U 560 Case Outline 2033 (unit: mm) a 3 1-31.63 e ao st 3 B: Base C: Collector E: Emitter : SANYO: SPA Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg. 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 354. Mm 7997076 0015813 310 MM 3097K1V/3135K/D282KI (KOTO) No.1049-1/32SA1253/2SC3135 Ic - V from top <q |S500#A E -40)450 4A I A00A 2S {-3504A # -307-3004A 2 a 5 Go 2 3 -10 =0 0 -0.2 0.4 0.6 -0.8 1,0 Collector to emitter voltage, VcE V I - VCE 2SA 12 Collector current, I mA Qo -10 -20 -30 40 -50 Collector to emitter voltage, Vce V Ic --V =100 Vog= -- 6V Pulse << -80 E ! 2 = c g 5 o +40 L 8 - 2 3-7 a 0 ~O.4 70.8 1.2 16 Base to emitter voltage, VgE V hee - I Von = Vv Common emitter DC current gain, hee 3S o -0.! AO 10 Collector current, i mA wo me 7997076 0015814 257 Common emitter DC current gain, heE from top SOOKA . $ 450A HK }ssOHA 3300 HA s Ss 2 5 eo 8 2 Q% I3=0 oO 0,2 0.4 0.6 08- 4.90 Collector to emitter voltage, Voge V Ic - VCE 2503135 t E t 2 #12 2 5 o 5 8 o 2 8 A 0 Ip=0 9 10 a.) 30 @ So Collector to emitter voltage, Vcg V Ico - V : C3135 <t. Pulse E 80 ! Oo ~, 60 Pe, c 2 3 . 0 o 8 2 & wo 0.4 8 L2 16 Base to emitter voltage, Vge V hee = I 8 1 Vor =6V Pulse 8 0.1 1a Collector current, ic mA wo 35528A1253/28C3135 Gain-bandwidth product, ff MHz Common Base 356 Output capacitance, cob PF Collector to emitter saturation voltage, VCE (sat) V ws 2 o - Collector current, i - mA s o 1.0 Collector to base voltage, Veg V 21.0 For PNP, minus sign is omitted. 40 fr - Ic Gain-bandwidth product, ff MHz 8 40 a) 100 1.0 Collector current, I MA Cob - VcB -28A 1253 f=! aw a | 2.0 o 8 gs SG og 58 es 2 s 86 1.0 10 -00 | 1.0 VcE{sat) - Ic r o e pa 0 a) Collector current, ic mA ASQ Collector to emitter saturation voltage, VCE(sat} ~ V Fad o Collector dissipation, Po mW Collector to emitter voltage, Vce V Me 7997076 0015815 113 fT - 1 10 10 Collector current, I mA Cob ~ VCB 10 100 Collector to base voltage, Vcg V V - 1 | Ig Ip=' ; 0 00 Coltector current, I mA Pc - Ta 125372803135 ] tt] 1a 7. OOO Ambient temperature, Tg CCASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS typical values. @ No marking is indicated. @ All of Sanyo lead formed small signal transistor case outlines are illustrated below. @ All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by 2.0 Case Outline 2003A/2003B (unit : mm) Case Outline 2019A/2019B (unit : mm) 2.0 0.44 2.0 0.46 tt pom 29 SE 29 3 Li) ~ 4 0.65 5. * 4.0 5.0 14.0 +] 40 JEDEC :TO-92 1: Source JEDEC 2702 1: Bmitter BIAS: SC-43 2: Gate EIAJ :SC-43 2: Collector SANYO :NP 3. Drain SANYO : NP 3: Base 74h . Case Outline 2004A (unit : mm) Case Outline 2033 (unit : mm) 0.44 2.2 + 3 >} 15.0 | Reds 2 rs 2p aq ., |-pe te m 492 wy FF =+4 ai j4 FE = [a | | 4 14.0 leo 1:Emitter * JEDEC :TO-92 1: Base 2: Collector BIAJ :SC-43 2: Emitter 3: Base SANYO : NP 3: Collector SANYO: SPA Case Outline 2005A (unit : mm) Case Outline 2034/2034A (unit : mm) 2.0 0.66 22 1.3 1.3 5.0 14.0 | 0.4 . 1: Source JEDEC :TO-92 1: Drain 2: Gate . EIAJ :SC-43 ; : Source 3: Drain . : : Gate SANYO : NP SANYO: SPA Case Outline 2006A (unit : mm) Case Outline 2040 (unit : mm) 22 3.0 0.5 pop wn Set | 2 it. b=2--f ( - {a we 4 a 42 1: Drain EIAJ :$C-61 1: Emitter 2: Source SANYO ; MP 2: Collector 3: Gate 3: Base SANYO: SPA Me 7997076 0015489 525 a 16Case Outline 2061 (unit : mm) 2.0 0.44 45 = _ bag = a 0.45 lho oa JEDEC :TO-92 : 1: Emitter EIAJ =: SC-43 2: Base SANYO : NP 3: Collector Case Outline 2064 (unit : mm) us 1 69 : ~ hd toe a qt} jos |S r2 3 hos. Ton Vou} 1: Emitter LOL Paty 2: CoHector | 3: Bose 2.94 254 SANYO: NMP Case Outline 2084A (unit:mm) __,, pre 10.5 LB I . 4 Lite tT }_afla.2 le 9.5. s i + | U tL to2 49 1: Emitter 2: Collector 3: Base 2.3 15) SANYO: FLP mm 7997076 0015490 240 17