ES1A thru ES1D
Vishay General Semiconductor
Document Number: 88586
Revision: 04-Jul-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Ultrafast Plastic Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast recovery times for high efficiency
Low forward voltage, low power losses
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V to 200 V
IFSM 30 A
trr 15 ns
VF0.92 V
TJ max. 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES1A ES1B ES1C ES1D UNIT
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Maximum average forward rectified current (Fig. 1) IF(AV) 1A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 30 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
ES1A thru ES1D
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88586
Revision: 04-Jul-07
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage IF = 0.6 A (1)
IF = 1.0 A VF 0.865 0.920 V
Maximum DC reverse current at rated
DC blocking voltage
TA = 25 °C
TA = 100 °C IR 5.0
100 µA
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A trr 15 ns
Maximum reverse recovery time IF = 0.6 A, VR = 30 V,
dI/dt = 50 A/µs, Irr =10 % IRM
TJ = 25 °C
TJ = 100 °C trr 25
35 ns
Maximum stored charge IF = 0.6 A, VR = 30 V,
dI/dt = 50 A/µs, Irr =10 % IRM
TJ = 25 °C
TJ = 100 °C Qrr 10
25 nC
Typical junction capacitance 4.0 V, 1 MHz CJ 10 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES1A ES1B ES1C ES1D UNIT
Typical thermal resistance (1) RθJA
RθJL
85
35 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
ES1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
ES1DHE3/61T (1) 0.064 61T 1800 7" diameter plastic tape and reel
ES1DHE3/5AT (1) 0.064 5AT 7500 13" diameter plastic tape and reel
Figure 1. Maximum Forward Current Derating Curve
0
1.2
80 90 100 110 120 130 140 150
0.8
1.0
0.2
0.4
0.6
Average Forward Rectified Current (A)
Lead Temperature (°C)
Resistive or Inductive Load
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
110 100
5
10
15
20
25
30
0
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
ES1A thru ES1D
Vishay General Semiconductor
Document Number: 88586
Revision: 04-Jul-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
10
1
0.1
0.01
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.81.0 1.2 1.4
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
020406080 100
1000
100
10
1
0.1
Instantaneous Reverse Leakage
Current (µA)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Thermal Impedance
Reverse Voltage (V)
Junction Capacitance (pF)
14
12
10
8
6
4
2
0
0.1 1 10 100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Mounted on 0.2 x 0.2" (5 x 7 mm)
Copper Pad Areas
100
10
1
0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208
(5.28) REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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