V
RRM
= 45 V - 100 V
I
F
= 60 A
Features
• High Surge Capability DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol MBR6045 (R) MBR6060 (R) Unit
Repetitive peak reverse voltage V
RRM
45 60 V
RMS reverse voltage V
RMS
32 42 V
DC blocking voltage
V
DC
45
60
V
2. Reverse polarity (R): Stud is anode.
Silicon Power
Schottk
y
Diode
MBR6045 thru MBR60100R
MBR60100 (R)
80
50
MBR6080 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
• Types from 45 V to 100 V V
RRM
Conditions
100
70
100
80
DC
blocking
voltage
V
DC
45
60
V
Continuous forward current I
F
60 60 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol MBR6045 (R) MBR6060(R) Unit
Diode forward voltage 0.65 0.75
55
150 150
Thermal characteristics
Thermal resistance, junction -
case R
thJC
1.0 1.0 °C/W
Reverse current I
R
V
F
60
700
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A700
mA
V
V
R
= 20 V, T
j
= 25 °C
I
F
= 60 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
700 700
-55 to 150
60
5
MBR6080 (R)
1.0
V
R
= 20 V, T
j
= 125 °C
1.0
0.84 0.84
150150
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
100
80
-55 to 150
MBR60100 (R)
5
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MBR6045 thru MBR60100R
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBR6045 thru MBR60100R
DO- 5 (DO-203AB)
J
K
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 1/4 –28 UNF
B 0.669 0.687 17.19 17.44
C ----- 0.794 ----- 20.16
D ----- 1.020 ----- 25.91
E 0.422 0.453 10.72 11.50
F 0.115 0.200 2.93 5.08
G ----- 0.460 ----- 11.68
J ----- 0.280 ----- 7.00
K 0.236 ----- 6.00 -----
M ----- 0.589 ----- 14.96
N ----- 0.063 ----- 1.60
P 0.140 0.175 3.56 4.45
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