Typical Size 6,4 mm X 6,6 mm TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 3-V TO 6-V INPUT, 3-A OUTPUT TRACKING SYNCHRONOUS BUCK PWM SWITCHER WITH INTEGRATED FETs (SWIFTTM) FOR SEQUENCING FEATURES D Power-Up/Down Tracking for Sequencing D 60-m MOSFET Switches for High Efficiency D D D D at 3-A Continuous Output Source or Sink Current Wide PWM Frequency: Fixed 350 kHz or Adjustable 280 kHz to 700 kHz Power Good and Enable Load Protected by Peak Current Limit and Thermal Shutdown Integrated Solution Reduces Board Area and Component Count APPLICATIONS D Low-Voltage, High-Density Distributed Power D D Systems Point of Load Regulation for High-Performance DSPs, FPGAs, ASICs, and Microprocessors Requiring Sequencing Broadband, Networking, and Optical Communications Infrastructure DESCRIPTION As a member of the SWIFTTM family of dc/dc regulators, the TPS54380 low-input voltage, high-output current, synchronous buck PWM converter integrates all required active components. Using the TRACKIN pin with other regulators, simultaneous power up and down are easily implemented. Included on the substrate with the listed features are a true, high-performance, voltage error amplifier that enables maximum performance and flexibility in choosing the output filter L and C components; an undervoltage-lockout circuit to prevent start-up until the input voltage reaches 3 V; an internally or externally set slow-start circuit to limit inrush currents; and a power-good output useful for processor/logic reset. The TPS54380 is available in a thermally enhanced 20-pin TSSOP (PWP) PowerPADTM package, which eliminates bulky heatsinks. TI provides evaluation modules and the SWIFTTM designer software tool to aid in quickly achieving high-performance power supply designs to meet aggressive equipment development cycles. SIMPLIFIED SCHEMATIC START-UP WAVEFORM I/O Supply VIN PH TPS54380 BOOT TRACKIN PGND VBIAS VSENSE AGND COMP RL = 1 Core Supply VI/O = 3.3 V 500 mV/div Input Vcore = 1.8 V 1 ms/div Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD and SWIFT are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2003, Texas Instruments Incorporated TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION TA OUTPUT VOLTAGE PACKAGE PART NUMBER -40C to 85C 0.9 V to 3.3 V Plastic HTSSOP (PWP)(1) TPS54380PWP (1) The PWP package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS54380PWPR). See the application section of the data sheet for PowerPAD drawing and layout information. (2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted(1) TPS54380 Input voltage range, range VI Output voltage range, range VO VIN, ENA -0.3 to 7 RT -0.3 to 6 VSENSE, TRACKIN -0.3 to 4 BOOT -0.3 to 17 VBIAS, COMP, PWRGD -0.3 to 7 PH -0.6 to 10 PH Source current, current IO Sink current, IS Voltage differential UNIT V V Internally Limited COMP, VBIAS 6 mA PH 6 A COMP 6 ENA, PWRGD 10 AGND to PGND mA 0.3 V Operating virtual junction temperature range, TJ -40 to 125 C Storage temperature, Tstg -65 to 150 C 300 C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT 3 6 V -40 125 C Input voltage, VI Operating junction temperature, TJ NOM DISSIPATION RATINGS(1)(2) (1) PACKAGE THERMAL IMPEDANCE JUNCTION-TO-AMBIENT TA = 25C POWER RATING TA = 70C POWER RATING TA = 85C POWER RATING 20-Pin PWP with solder 26 C/W 3.85 W(3) 2.12 W 1.54 W 20-Pin PWP without solder 57.5 C/W 1.73 W 0.96 W 0.69 W For more information on the PWP package, see TI technical brief, literature number SLMA002. (2) Test board conditions: 1. 3-inch x 3-inch, 2 layers, thickness: 0.062 inch 2. 1.5-oz. copper traces located on the top of the PCB 3. 1.5-oz. copper ground plane on the bottom of the PCB 4. 10 thermal vias (see "Recommended Land Pattern" in applications section of this data sheet) (3) Maximum power dissipation may be limited by overcurrent protection. 2 TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 ELECTRICAL CHARACTERISTICS over operating free-air temperature range unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE, VIN Input voltage range, VIN I(Q) Quiescent current 3.0 6.0 fs = 350 kHz, RT open, PH pin open 6.2 9.6 fs = 500 kHz, RT = 100 k, PH pin open 8.4 12.8 1 1.4 2.95 3.0 Shutdown, ENA = 0 V V mA UNDERVOLTAGE LOCKOUT Start threshold voltage, UVLO V Stop threshold voltage, UVLO 2.70 2.80 Hysteresis voltage, UVLO 0.14 0.16 V 2.5 s Rising and falling edge deglitch, UVLO(1) V BIAS VOLTAGE Output voltage, VBIAS I(VBIAS) = 0 2.70 2.80 Output current, VBIAS (2) 2.90 V 100 A CUMULATIVE REFERENCE Vref Accuracy 0.882 0.891 0.900 V REGULATION Line regulation(1)(3) Load regulation(1)(3) IL = 1.5 A, fs = 350 kHz, TJ = 85C 0.07 IL = 1.5 A, fs = 550 kHz, TJ = 85C 0.07 IL = 0 A to 3 A, fs = 350 kHz, TJ = 85C 0.03 IL = 0 A to 3 A, fs = 550 kHz, TJ = 85C 0.03 %/V %/A OSCILLATOR Internally set--free running frequency RT open RT = 180 k (1% resistor to Externally set set--free free running frequency range AGND)(1) 280 350 420 252 280 308 RT = 100 k (1% resistor to AGND) 460 500 540 RT = 68 k (1% resistor to AGND)(1) 663 700 762 Ramp valley(1) 0.75 Ramp amplitude (peak-to-peak)(1) Maximum duty cycle kHz V 1 Minimum controllable on time(1) kHz V 200 ns 90% (1) Specified by design Static resistive loads only (3) Specified by the circuit used in Figure 10 (2) 3 TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ERROR AMPLIFIER Error amplifier open-loop voltage gain 1 k COMP to AGND(1) 90 110 Error amplifier unity gain bandwidth Parallel 10 k, 160 pF COMP to AGND(1) 3 5 Error amplifier common mode input voltage range Powered by internal LDO(1) 0 Input bias current, VSENSE VSENSE = Vref 60 Output voltage slew rate (symmetric), COMP(1) 1.0 dB MHz VBIAS V 250 nA 1.4 V/s PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin (excluding dead-time) 10-mV overdrive(1) 70 85 ns 1.20 1.40 V ENABLE Enable threshold voltage, ENA 0.82 Enable hysteresis voltage, ENA Falling edge deglitch, 0.03 ENA(1) Leakage current, ENA V 2.5 VI = 5.5 V s 1 A POWER GOOD Power-good threshold voltage VSENSE falling Power-good hysteresis voltage(1) Power-good falling edge deglitch(1) 90 %Vref 3 %Vref 35 Output saturation voltage, PWRGD I(sink) = 2.5 mA Leakage current, PWRGD VI = 5.5 V 0.18 s 0.3 V 1 A CURRENT LIMIT C Current t limit li it trip t i point i t VI = 3 V Output shorted(1) 4 6.5 VI = 6 V shorted(1) 4.5 7.5 Output A Current limit leading edge blanking time(1) 100 ns Current limit total response time(1) 200 ns THERMAL SHUTDOWN Thermal shutdown trip point(1) Thermal shutdown 135 hysteresis(1) 150 165 10 C C OUTPUT POWER MOSFETS rDS(on) Power MOSFET switches VI = 6 V(4) 59 88 V(4) 85 136 VI = 3 m TRACKIN (1) Input offset, TRACKIN VSENSE = TRACKIN = 1.25 V(1) Input voltage range, TRACKIN See Note 1 Specified by design Static resistive loads only (3) Specified by the circuit used in Figure 10 (4) Matched MOSFETs low-side r DS(on) production tested, high-side rDS(on) specified by design (2) 4 -1.5 1.5 mV 0 Vref V TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 PWP PACKAGE (TOP VIEW) AGND VSENSE COMP PWRGD BOOT PH PH PH PH PH 1 2 3 4 5 6 7 8 9 10 20 19 18 17 THERMAL 16 PAD 15 14 13 12 11 RT ENA TRACKIN VBIAS VIN VIN VIN PGND PGND PGND TERMINAL FUNCTIONS TERMINAL NAME NO. DESCRIPTION AGND 1 Analog ground. Return for compensation network/output divider, slow-start capacitor, VBIAS capacitor, RT resistor. Connect PowerPAD to AGND. BOOT 5 Bootstrap output. 0.022-F to 0.1-F low-ESR capacitor connected from BOOT to PH generates floating drive for the high-side FET driver. COMP 3 Error amplifier output. Connect frequency compensation network from COMP to VSENSE ENA 19 Enable input. Logic high enables oscillator, PWM control and MOSFET driver circuits. Logic low disables operation and places device in low quiescent current state. PGND 11-13 Power ground. High current return for the low-side driver and power MOSFET. Connect PGND with large copper areas to the input and output supply returns, and negative terminals of the input and output capacitors. A single-point connection to AGND is recommended. PH 6-10 Phase output. Junction of the internal high-side and low-side power MOSFETs and output inductor. PWRGD 4 Power-good open-drain output. High when VSENSE 90% Vref, otherwise PWRGD is low. RT 20 Frequency setting resistor input. Connect a resistor from RT to AGND to set the switching frequency. TRACKIN 18 External reference input. High impedance input to internal reference/multiplexer and error amplifier circuits. VBIAS 17 Internal bias regulator output. Supplies regulated voltage to internal circuitry. Bypass VBIAS pin to AGND pin with a high quality, low-ESR 0.1-F to 1.0-F ceramic capacitor. 14-16 Input supply for the power MOSFET switches and internal bias regulator. Bypass VIN pins to PGND pins close to device package with a high quality, low-ESR 10-F ceramic capacitor. VIN VSENSE 2 Error amplifier inverting input. Connect to output voltage through compensation network/output divider. 5 TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 INTERNAL BLOCK DIAGRAM VBIAS AGND Enable Comparator ENA 1.2 V Hysteresis: 0.03 V Falling Edge Deglitch 2.5 s VIN UVLO Comparator VIN 2.95 V Hysteresis: 0.16 V I/O VIN ILIM Comparator Thermal Shutdown 150C Falling and Rising Edge Deglitch 100 ns BOOT Sense FET 60 m 2.5 s SHUTDOWN PH Multiplexer + - R Q Error Amplifier Reference S PWM Comparator 25-ns Adaptive Dead-Time VIN 60 m PGND Power-Good Comparator VSENSE 0.90 Vref TPS54380 Hysteresis: 0.03 Vref VSENSE COMP RT SHUTDOWN LOUT CO Adaptive Dead-Time and Control Logic OSC 6 VIN Leading Edge Blanking SS_DIS TRACKIN REG VBIAS SHUTDOWN Falling Edge Deglitch 35 s PWRGD Core TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 TYPICAL CHARACTERISTICS DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE VI = 3.3 V 100 IO = 3 A 80 60 40 20 0 -40 0 25 85 VI = 5 V IO = 3 A 80 60 40 20 0 -40 125 TJ - Junction Temperature - C 0 25 85 125 250 -40 600 RT = 100 k 500 400 RT = 180 k 300 25 85 0.893 0.891 0.889 0.887 TJ - Junction Temperature - C 0 Figure 4 85 25 0.8910 0.8890 f = 350 kHz 0.8870 3 125 4 5 VI - Input Voltage - V DEVICE POWER LOSSES vs LOAD CURRENT 0 -80 -100 60 -120 40 Gain 20 -140 -160 0 10 100 1k Device Power Losses - W Phase 1.75 1.5 1 VI = 5 V 0.75 0.5 0.25 -200 10 k 100 k 1 M 10 M 0 Figure 7 VI = 3.3 V 1.25 -180 f - Frequency - Hz TJ - 125C fs = 700 kHz 2 -40 -60 80 2.25 -20 Phase - Degrees 100 6 Figure 6 ERROR AMPLIFIER OPEN LOOP RESPONSE 120 125 TA = 85C Figure 5 RL= 10 k, CL = 160 pF, TA = 25C 85 0.8930 TJ - Junction Temperature - C 140 25 0.8850 0.885 -40 125 0 0.8950 VO - Output Voltage Regulation - V Vref - Voltage Reference - V 700 Gain - dB 350 OUTPUT VOLTAGE REGULATION vs INPUT VOLTAGE 0.895 0 450 Figure 3 RT = 68 k -20 550 TJ - Junction Temperature - C VOLTAGE REFERENCE vs JUNCTION TEMPERATURE 800 0 650 Figure 2 EXTERNALLY SET OSCILLATOR FREQUENCY vs JUNCTION TEMPERATURE 200 -40 750 TJ - Junction Temperature - C Figure 1 f - Externally Set Oscillator Frequency - kHz f - Internally Set Oscillator Frequency -kHz 100 Drain-Source On-State Resistance - Drain-Source On-State Resistance - 120 INTERNALLY SET OSCILLATOR FREQUENCY vs JUNCTION TEMPERATURE 0 1 2 3 IL - Load Current - A 4 Figure 8 7 TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 APPLICATION INFORMATION Figure 9 shows the schematic diagram for a typical TPS54380 application. The TPS54380 (U1) can provide greater than 3 A of output current at a nominal output voltage of 1.8 V. For proper thermal performance, the exposed thermal PowerPAD underneath the integrated circuit package must be soldered to the printed-circuit board. To provide power-up tracking, the enable of the I/O supply should be used. If the I/O enable is not used to power up, then devices with similar undervoltage lockout thresholds need to be implemented to ensure power-up tracking. To ensure power-down tracking, the enable pin must be used. TPS2013 Distribution Switch R2 R4 10 k 71.5 k R6 9.76 k C2 1 F VIN C6 10 F C7 10 F 20 19 VOUT_I/O R1 10 k U1 RT AGND ENA VSENSE TRACKIN COMP VBIAS PWRGD BOOT VIN VIN PH 18 17 16 15 14 VIN 13 PGND 12 PGND 11 PGND 1 2 3 4 5 6 7 R3 R5 C1 120 pF 7.15 k C4 C5 PH 8 PH 9 PH 10 PH PwrPad 100 pF 0.047 F R9 2.4 10 k R7 C3 768 820 pF R8 9.76 k L1 1 H VOUT_CORE C8 22 F C9 22 F C12 0.1 F C10 22 F C11 3300 pF Analog and Power Grounds are Tied at the PowerPAD Under the Package of IC Figure 9. Application Circuit COMPONENT SELECTION The values for the components used in this design example were selected for low output ripple voltage and small PCB area. Additional design information is available at www.ti.com. INPUT FILTER The input voltage is a nominal 5 Vdc. The input filter C6 is a 10-F ceramic capacitor (Taiyo Yuden). C7, also a 10-F ceramic capacitor (Taiyo Yuden), provides high-frequency decoupling of the TPS54380 from the input supply and must be located as close as possible to the device. Ripple current is carried in both C6 and C7, and the return path to PGND must avoid the current circulating in the output capacitors C8, C9, and C10. FEEDBACK CIRCUIT The values for these components have been selected to provide low output ripple voltage. The resistor divider network of R3 and R8 sets the output voltage for the circuit 8 at 1.8 V. R3, along with R7, R5, C1, C3, and C4 form the loop compensation network for the circuit. For this design, a Type 3 topology is used. OPERATING FREQUENCY In the application circuit, the 350-kHz operation is selected by leaving RT open. Connecting a 180-k to 68-k resistor between RT (pin 20) and analog ground can be used to set the switching frequency from 280 kHz to 700 kHz. To calculate the RT resistor, use the following equation: R+ 500 kHz Switching Frequency 100 [kW] (1) OUTPUT FILTER The output filter is composed of a 1-H inductor and 3 x 22-F capacitor. The inductor is a low dc resistance (0.010 ) type, Vishay 1HLP2525CZ01. The capacitors used are 22-F, 6.3-V ceramic types with X5R dielectric. www.ti.com TPS54380 SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 An additional high-frequency bypass capacitor, C12, is also used. The feedback loop is compensated so that the unity gain frequency is approximately 50 kHz. PCB LAYOUT Figure 10 shows a generalized PCB layout guide for the TPS54380. The VIN pins should be connected together on the printed-circuit board (PCB) and bypassed with a low-ESR ceramic bypass capacitor. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the VIN pins, and the TPS54380 ground pins. The minimum recommended bypass capacitance is 10 F ceramic with a X5R or X7R dielectric and the optimum placement is closest to the VIN pins and the PGND pins. The TPS54380 has two internal grounds (analog and power). Inside the TPS54380, the analog ground ties to all of the noise-sensitive signals, while the power ground ties to the noisier power signals. Noise injected between the two grounds can degrade the performance of the TPS54380, particularly at higher output currents. Ground noise on an analog ground plane can also cause problems with some of the control and bias signals. For these reasons, separate analog and power ground traces are recommended. There should be an area of ground on the top layer directly under the IC, with an exposed area for connection to the PowerPAD. Use vias to connect this ground area to any internal ground planes. Use additional vias at the ground side of the input and output filter capacitors as well. The AGND and PGND pins should be tied to the PCB ground by connecting them to the ground area under the device as shown. The only components that should tie directly to the power ground plane are the input capacitors, the output capacitors, the input voltage decoupling capacitor, and the PGND pins of the TPS54380. Use a separate wide trace for the analog ground signal path. This analog ground should be used for the voltage set-point divider, timing resistor RT, and bias capacitor grounds. Connect this trace directly to AGND (pin 1). The PH pins should be tied together and routed to the output inductor. Because the PH connection is the switching node, inductor should be located close to the PH pins and the area of the PCB conductor minimized to prevent excessive capacitive coupling. Connect the boot capacitor between the phase node and the BOOT pin as shown. Keep the boot capacitor close to the IC and minimize the conductor trace lengths. Connect the output filter capacitor(s) as shown, between the VOUT trace and PGND. It is important to keep the loop formed by the PH pins, Lout, Cout, and PGND as small as practical. Place the compensation components from the VOUT trace to the VSENSE and COMP pins. Do not place these components too close to the PH trace. Due to the size of the IC package and the device pinout, they have to be routed somewhat close, but maintain as much separation as possible while still keeping the layout compact. Connect the bias capacitor from the VBIAS pin to analog ground using the isolated analog ground trace. If an RT resistor is used, connect it to this trace as well. LAYOUT CONSIDERATIONS FOR THERMAL PERFORMANCE For operation at full rated load current, the analog ground plane must provide an adequate heat dissipating area. A 3-inch by 3-inch plane of 1-ounce copper is recommended, though not mandatory, depending on ambient temperature and airflow. Most applications have larger areas of internal ground plane available, and the PowerPAD must be connected to the largest area available. Additional areas on the top or bottom layers also help dissipate heat, and any area available must be used when 3-A or greater operation is desired. Connection from the exposed area of the PowerPAD to the analog ground plane layer must be made using 0.013-inch diameter vias to avoid solder wicking through the vias. Six vias must be in the PowerPAD area with four additional vias located under the device package. The size of the vias under the package, but not in the exposed thermal pad area, can be increased to 0.018. Additional vias beyond the twelve recommended that enhance thermal performance must be included in areas not under the device package. 9 TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 ANALOG GROUND TRACE AGND RT COMPENSATION NETWORK TRACKING VOLTAGE ENA VSENSE COMP RESISTOR DIVIDER NETWORK TRACKIN BIAS CAPACITOR PWRGD BOOT CAPACITOR EXPOSED BOOT OUTPUT INDUCTOR PH VIN Vin VIN POWERPAD AREA PH VOUT VBIAS PH VIN PH PGND PH PGND PH PGND INPUT BYPASS CAPACITOR OUTPUT FILTER CAPACITOR INPUT BULK FILTER TOPSIDE GROUND AREA VIA to Ground Plane Figure 10. TPS54380 PCB Layout PERFORMANCE GRAPHS OUTPUT VOLTAGE vs OUTPUT CURRENT 100 95 V O - Output Voltage - V VI = 3.3 V 90 Efficiency - % 85 VI = 5 V 80 75 70 65 60 OUTPUT VOLTAGE vs INPUT VOLTAGE 1.83 1.83 1.82 1.82 V O - Output Voltage - V EFFICIENCY vs OUTPUT CURRENT 1.81 VI = 3.3 V 1.8 VI = 5 V 1.79 1.78 1.81 IO = 1.5 A IO = 0 A 1.8 IO = 3 A 1.79 1.78 55 50 0 0.5 1 1.5 2 2.5 IO - Output Current - A Figure 11 10 3 3.5 1.77 0 0.5 1 1.5 2 2.5 IO - Output Current - A Figure 12 3 3.5 1.77 3 4 V I 5 - Input Voltage - V Figure 13 6 TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 30 90 20 60 10 30 Gain 0 -10 0 -30 115 95 85 -90 -40 -120 -50 -150 35 -180 1M 25 100 k f - Frequency - Hz Safe Operating Area(1) 65 -30 10 k VI = 3.3 V 75 -60 1k VI = 5 V 105 -20 -60 100 Output Ripple Voltage - 10 mV/div 120 T A - Ambient Temperature - C Gain - dB 150 40 55 45 0 1 2 3 IL - Load Current - A 4 Figure 15 Figure 14 LOAD TRANSIENT RESPONSE Figure 16 POWER-DOWN TIMING START-UP TIMING V I/O ~Enable V I/O ~Enable 20 mV/div 2 V/div I = 0.75 A to 2.25 A V I/O 100 s/div Figure 17 Vcore 1 V/div 1 A/div V I/O (1) Time - 1 s/div 2 V/div Phase 50 OUTPUT RIPPLE VOLTAGE 125 180 Vcore 1 V/div MEASURED LOOP RESPONSE Phase - Degrees 60 AMBIENT TEMPERATURE vs LOAD CURRENT 2 ms/div 2 ms/div Figure 19 Figure 18 Safe operating area is applicable to the test board conditions in the Dissipation Ratings table. DETAILED DESCRIPTION UNDERVOLTAGE LOCKOUT (UVLO) The TPS54380 incorporates an undervoltage lockout circuit to keep the device disabled when the input voltage (VIN) is insufficient. During power up, internal circuits are held inactive until VIN exceeds the nominal UVLO threshold voltage of 2.95 V. Once the UVLO start threshold is reached, device start-up begins. The device operates until VIN falls below the nominal UVLO stop threshold of 2.8 V. Hysteresis in the UVLO comparator, and a 2.5-s rising and falling edge deglitch circuit reduce the likelihood of shutting the device down due to noise on VIN. rate. If the reference voltage on TRACKIN rises more slowly, then the output rises at about the same rate as TRACKIN. Once the voltage on the TRACKIN pin is greater than the internal reference of 0.891 V, the multiplexer switches the noninverting node to the high-precision reference. ENABLE (ENA) TRACKIN/INTERNAL SLOW-START The enable pin, ENA, provides a digital control enable or disable (shutdown) for the TPS54380. An input voltage of 1.4 V or greater ensures that the TPS54380 is enabled. An input of 0.82 V or less ensures that device operation is disabled. These are not standard logic thresholds, even though they are compatible with TTL outputs. The internal slow-start circuit provides start-up slope control of the output voltage. The nominal internal slow-start rate is 25 V/ms. When the voltage on TRACKIN rises faster than the internal slope or is present when device operation is enabled, the output rises at the internal When ENA is low, the oscillator, slow-start, PWM control and MOSFET drivers are disabled and held in an initial state ready for device start-up. On an ENA transition from low to high, device start-up begins with the output starting from 0 V. 11 TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 VBIAS REGULATOR (VBIAS) The VBIAS regulator provides internal analog and digital blocks with a stable supply voltage over variations in junction temperature and input voltage. A high quality, low-ESR, ceramic bypass capacitor is required on the VBIAS pin. X7R- or X5R-grade dielectrics are recommended because their values are more stable over temperature. The bypass capacitor must be placed close to the VBIAS pin and returned to AGND. External loading on VBIAS is allowed, with the caution that internal circuits require a minimum VBIAS of 2.70 V, and external loads on VBIAS with ac or digital switching noise may degrade performance. The VBIAS pin may be useful as a reference voltage for external circuits. VOLTAGE REFERENCE The voltage reference system produces a precise Vref signal by scaling the output of a temperature stable bandgap circuit. During manufacture, the bandgap and scaling circuits are trimmed to produce 0.891 V at the output of the error amplifier, with the amplifier connected as a voltage follower. The trim procedure adds to the high-precision regulation of the TPS54380, because it cancels offset errors in the scale and error amplifier circuits. OSCILLATOR AND PWM RAMP The oscillator frequency is set internally to 350 kHz. If a different frequency of operation is required for the application, the oscillator frequency can be externally adjusted from 280 to 700 kHz by connecting a resistor between the RT pin and AGND. The switching frequency is approximated by the following equation, where R is the resistance from RT to AGND: Switching Frequency + 100 kW R 500 [kHz] SWITCHING FREQUENCY (2) RT PIN 350 kHz, internally set Float Externally set 280 kHz to 700 kHz R = 180 k to 68 k ERROR AMPLIFIER The high-performance, wide bandwidth, voltage error amplifier sets the TPS54380 apart from most dc/dc converters. The user is given the flexibility to use a wide range of output L and C filter components to suit the particular application needs. Type-2 or type-3 compensation can be employed using external compensation components. PWM CONTROL Signals from the error amplifier output, oscillator, and current limit circuit are processed by the PWM control logic. Referring to the internal block diagram, the control logic includes the PWM comparator, OR gate, PWM latch, 12 and portions of the adaptive dead-time and control logic block. During steady-state operation below the current limit threshold, the PWM comparator output and oscillator pulse train alternately reset and set the PWM latch. Once the PWM latch is reset, the low-side FET remains on for a minimum duration set by the oscillator pulse width. During this period, the PWM ramp discharges rapidly to its valley voltage. When the ramp begins to charge back up, the low-side FET turns off and high-side FET turns on. As the PWM ramp voltage exceeds the error amplifier output voltage, the PWM comparator resets the latch, thus turning off the high-side FET and turning on the low-side FET. The low-side FET remains on until the next oscillator pulse discharges the PWM ramp. During transient conditions, the error amplifier output could be below the PWM ramp valley voltage or above the PWM peak voltage. If the error amplifier is high, the PWM latch is never reset, and the high-side FET remains on until the oscillator pulse signals the control logic to turn the high-side FET off and the low-side FET on. The device operates at its maximum duty cycle until the output voltage rises to the regulation set-point, setting VSENSE to approximately the same voltage as VREF. If the error amplifier output is low, the PWM latch is continually reset and the high-side FET does not turn on. The low-side FET remains on until the VSENSE voltage decreases to a range that allows the PWM comparator to change states. The TPS54380 is capable of sinking current continuously until the output reaches the regulation set-point. If the current limit comparator trips for longer than 100 ns, the PWM latch resets before the PWM ramp exceeds the error amplifier output. The high-side FET turns off and low-side FET turns on to decrease the energy in the output inductor and consequently the output current. This process is repeated each cycle in which the current limit comparator is tripped. DEAD-TIME CONTROL AND MOSFET DRIVERS Adaptive dead-time control prevents shoot-through current from flowing in both N-channel power MOSFETs during the switching transitions by actively controlling the turnon times of the MOSFET drivers. The high-side driver does not turn on until the voltage at the gate of the low-side FET is below 2 V. While the low-side driver does not turn on until the voltage at the gate of the high-side MOSFET is below 2 V. The high-side and low-side drivers are designed with 300-mA source and sink capability to quickly drive the power MOSFETs gates. The low-side driver is supplied from VIN, while the high-side drive is supplied from the BOOT pin. A bootstrap circuit uses an external BOOT capacitor and an internal 2.5- bootstrap switch connected between the VIN and BOOT pins. The integrated bootstrap switch improves drive efficiency and reduces external component count. TPS54380 www.ti.com SLVS454B - JANUARY 2003 - REVISED FEBRUARY 2005 OVERCURRENT PROTECTION The cycle-by-cycle current limiting is achieved by sensing the current flowing through the high-side MOSFET and comparing this signal to a preset overcurrent threshold. The high-side MOSFET is turned off within 200 ns of reaching the current limit threshold. A 100-ns leading edge blanking circuit prevents the current limit from false tripping. Current limit detection occurs only when current flows from VIN to PH when sourcing current to the output filter. Load protection during current sink operation is provided by thermal shutdown. THERMAL SHUTDOWN The device uses the thermal shutdown to turn off the power MOSFETs and disable the controller if the junction temperature exceeds 150C. The device is released from shutdown automatically when the junction temperature decreases to 10C below the thermal shutdown trip-point, and starts up under control of the slow-start circuit. Thermal shutdown provides protection when an overload condition is sustained for several milliseconds. With a persistent fault condition, the device cycles continuously; starting up by control of the soft-start circuit, heating up due to the fault condition, and then shutting down on reaching the thermal shutdown trip-point. This sequence repeats until the fault condition is removed. POWERGOOD (PWRGD) The power-good circuit monitors for under-voltage conditions on VSENSE. If the voltage on VSENSE is 10% below the reference voltage, the open-drain PWRGD output is pulled low. PWRGD is also pulled low if VIN is less than the UVLO threshold or ENA is low, or a thermal shutdown occurs. When VIN UVLO threshold, ENA enable threshold, and VSENSE > 90% of Vref, the open-drain output of the PWRGD pin is high. A hysteresis voltage equal to 3% of Vref and a 35-s falling edge deglitch circuit prevent tripping of the power-good comparator due to high-frequency noise. 13 PACKAGE OPTION ADDENDUM www.ti.com 18-Sep-2008 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS54380PWP ACTIVE HTSSOP PWP 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS54380PWPG4 ACTIVE HTSSOP PWP 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS54380PWPR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS54380PWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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OTHER QUALIFIED VERSIONS OF TPS54380 : * Automotive: TPS54380-Q1 NOTE: Qualified Version Definitions: * Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device TPS54380PWPR Package Package Pins Type Drawing SPQ HTSSOP 2000 PWP 20 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 330.0 16.4 Pack Materials-Page 1 6.95 B0 (mm) K0 (mm) P1 (mm) 7.1 1.6 8.0 W Pin1 (mm) Quadrant 16.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS54380PWPR HTSSOP PWP 20 2000 367.0 367.0 38.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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