8 Megabit FLASH EEPROM
DPZ512X16In3
DESCRIPTION:
The DPZ512X16In3 ‘’STACK’’ modules are a revolutionary new
memory subsystem using Dense-Pac Microsystems’ ceramic
Stackable Leadless Chip Carriers (SLCC). Available in straight
leaded, ‘’J’’ leaded or gullwing leaded packages, or mounted on a
50-pin PGA co-fired ceramic substrate. The module packs
8-Megabits of FLASH EEPROM in an area as small as 0.463 in2,
while maintaining a total height as low as 0.349 inches.
The DPZ512X16In3 STACK modules contain four individual SLCC
packages each containing two 128K x 8 FLASH memory devices.
Each SLCC is hermetically sealed making the module suitable for
commercial, industrial and military applications.
By using SLCCs, the ‘’Stack’’ family of modules offer a higher board
density of memory than available with conventional through-hole,
surface mount or hybrid techniques.
FEATURES:
Organization:
512K x 16 or 1 Meg x 8
Fast Access Times (max.):
120, 150, 170, 200, 250ns
Fully Static Operation - No clock or refresh required
TTL Compatible Inputs and Outputs
Common Data Inputs and Outputs
10,000 Erase/Program Cycles (min.)
Packages Available:
48 - Pin SLCC Stack
48 - Pin Straight Leaded Stack
48 - Pin ‘’J’’ Leaded Stack
48 - Pin Gullwing Leaded Stack
50 - Pin PGA Dense-Stack
DPZ512X16IH3
DPZ512X16IJ3
DPZ512X16IA3
DPZ512X16IY3
DPZ512X16II3
This document contains information on a product that is currently released
to production at Dense-Pac Microsystems, Inc. Dense-Pac reserves the
right to change products or specifications herein without prior notice.
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PIN-OUT DIAGRAM
FUNCTIONAL BLOCK DIAGRAM
48 - PIN LEADLESS STACK
48 - PIN STRAIGHT LEADED STACK
48 - PIN ‘’J’’ LEADED STACK
48 - PIN GULLWING LEADED STACK
50 - PIN PGA
DENSE-STACK
PIN NAMES
A0 - A16 Address Inputs
I/O0 - I/O15 Data
Input/Output
CE0 - CE7Chip Enables *
WE Write Enable
OE Output Enable
Programming Voltage
VPP (+12.0V)
VDD Power (+5V)
VSS Ground
N.C. No Connect
*CE0, CE2, CE4 and CE6 control I/O0 - I/O7,
CE1, CE3, CE5 and CE7 control I/O8 - I/O15.
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DEVICE OPERATION:
The FLASH devices are electrically erasable and
programmable memories that function similarly to an EPROM
device, but can be erased without being removed from the
system and exposed to ultraviolet light. Each 128K x 8 device
can be erased individually eliminating the need to re-program
the entire module when partial code changes are required.
READ:
With VPP = 0V to VDD (VPPLO), the devices are read-only
memories and can be read like a standard EPROM. By
selecting the device to be read (see Truth Table and
Functional Block Diagram), the data programmed into the
device will appear on the appropriate I/O pins.
When VPP = +12.0V ± 0.6V (VPPHI), reads can be
accomplished in the same manner as described above but
must be preceded by writing 00H1 to the command register
prior to reading the device. When VPP is raised to VPPHI the
contents of the command register default to 00H1 and remain
that way until the command register is altered.
STANDBY:
When the appropriate CE‘s are raised to a logic-high level, the
standby operation disables the FLASH devices reducing the
power consumption substantially. The outputs are placed in
a high- impedance state, independent of the OE input. If the
module is deselected during programming or erase, the
device upon which the operation was being performed will
continue to draw active current until the operation is
completed.
PROGRAM:
The programming and erasing functions are accessed via the
command register when high voltage is applied to VPP. The
contents of the command register control the functions of the
memory device (see Command Definition Table).
The command register is not an addressable memory
location. The register stores the address, data, and command
information required to execute the command. When VPP =
VPPLO the command register is reset to 00H1 returning the
device to the read-only mode.
The command register is written by enabling the device upon
which that the operation is to be performed (see Functional
Block Diagram). While the device is enabled bring WE to a
logic-low (VIL). The address is latched on the falling edge of
WE and data is latched on the rising edge of WE.
Programming is initiated by writing 40H1 (program setup
command) to the command register. On the next falling edge
of WE the address to be programmed will be latched,
followed by the data being latched on the rising edge of WE
(see AC Operating and Characteristics Table).
PROGRAM VERIFY:
The FLASH devices are programmed one location at a time.
Each location may be programmed sequentially or at random.
Following each programming operation, the data written
must be verified.
To initiate the program-verify mode, C0H1 must be written to
the command register of the device just programmed. The
programming operation is terminated on the rising edge of
WE. The program-verify command is then written to the
command register.
After the program-verify command is written to the command
register, the memory device applies an internally generated
margin voltage to the location just written. After waiting 6µs
the data written can be verified by doing a read. If true data
is read from the device, the location write was successful and
the next location may be programmed.
If the device fails to verify, the program/verify operation is
repeated up to 25 times.
ERASE:
The erase function is a command-only operation and can only
be executed while VPP = VPPHI.
To setup the chip-erase, 20H1 must be written to the
command register. The chip-erase is then executed by once
again writing 20H1 to the command register (see AC
Operating and Characteristics Table).
To ensure a reliable erasure, all bits in the device to be erased
should be programmed to their charged state (data = 00H)
prior to starting the erase operation. With the algorithm
provided, this operation should typically take 2 seconds.
HIGH PERFORMANCE PARALLEL ERASURE:
Dense-Pac recommends that all users implement the
following Intel High Performance Parallel Erase algorithm
in order to avoid the possibility of over erasing these parts.
In applications containing more than one FLASH memory,
you can erase each device serially or you can reduce total
erase time by implementing a parallel erase algorithm. You
may save time by erasing all devices at the same time.
However, since FLASH memories may erase at different rates,
you must verify each device separately. This can be done in
a word-wise fashion with the Command Register Reset
Command and a special masking algorithm.
Take for example the case of two-device (parallel) erasure.
The CPU first writes the data word erase command 2020H
twice in succession. This starts erasure. After 10ms, the CPU
writes the data word verify command A0A0H to stop erasure
and setup erase verification. If both one or both bytes are not
erased at the given address, the CPU implements the erase
sequence again without incrementing the address.
Suppose at the given address only the low byte verifies FFH
data? Could the whole chip be erased? The answer is yes.
Rather than check the rest of the low byte addresses
independently of the high byte, simply use the reset
command to mask the low byte from erasure and erase
verification on the next erase loop. In this example the erase
command would be 20FFH and the verify command would
be A0FFH. Once the high byte verifies at the address, the
CPU modifies the command back to the default 2020H and
A0A0H, increments to the next address, and then writes the
verify command.
See Figure 4 for a conceptual view of the parallel erase flow
chart and Figure 4 for the detailed version. These flow charts
are for the 16-bit systems and can be expanded for 32-bit
designs.
ERASE VERIFY:
The erase operation erases all locations in the device selected
in parallel. Upon completion of the erase operation, each
location must be verified. This operation is initiated by writing
A0H1 to the command register. The address to be verified
must be supplied in order to be latched on the falling edge of
WE.
The memory device internally generates a margin voltage and
applies it to the addressed location. If FFH is read from the
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device, it indicates the location is erased. The erase/verify
command is issued prior to each location verification to latch
the address of the location to be verified. This continues until
FFH is not read from the device or the last address for the
device being erased is read.
If FFH is not read from the location being verified, an
additional erase operation is performed. Verification then
resumes from the last location verified. Once all locations in
the device being erased are verified, the erase operation is
complete. The verify operation should now be terminated by
writing a valid command such as program set-up to the
command register.
PRODUCT I.D. OPERATION:
The product I.D. operation outputs the manufacturer code
(89H) and the device code (B4H). This allows programming
equipment to match the device with the proper erase and
programming algorithms.
With CE and OE at a logic low level, raising A9 to VID (see
DC Operating Characteristics) will initiate the operation. The
manufacturer’s code can then be read from address location
0000H and the device code can be read from address
location 0001H.
The I.D. codes can also be accessed via the command
register. Following a write of 90H to the command register,
a read from address location 0000H outputs the
manufacturer’s code (89H). A read from address location
0001H outputs the device code (B4H). To terminate the
operation, it is necessary to write another valid command into
the register.
POWER UP/DOWN PROTECTION:
The FLASH devices are designed to protect against accidental
erasure or programming during power transitions. It makes
no difference as to which power supply, VPP or VDD, powers
up first. Power supply sequencing is not required. Internal
circuitry ensures that the command register is reset to the read
mode upon power up.
POWER SUPPLY DECOUPLING:
VPP traces should use trace widths and layout considerations
comparable to that of the VDD power bus. The VPP supply
traces should also be decoupled to help decrease voltage
spikes.
While the memory module has high-frequency,
low-inductance decoupling capacitors mounted on the
substrate connected to VDD and VSS, it is recommended that
a 4.7µF to 10µF electrolytic capacitor be placed near the
memory module connected across VDD and VSS for bulk
storage. Decoupling capacitors should also be placed near
the module, connected across VPP and VSS.
COMMAND DEFINITION TABLE
Command
Bus
Cycles
Req’d
First Bus Cycle Second Bus Cycle
Operation Address Data 1Operation Address Data 1
Read Memory 1Write X00H - - -
Setup Erase / Erase 2Write X20H Write X20H
Erase Verify 2Write EA A0H Read XEVD
Setup Program / Program 2Write X40H Write PA PD
Program Verify 2Write XC0H Read XPVD
Reset 2Write XFFH Write XFFH
Read Product I.D. Codes 3Write X90H Read IA ID
EA =Address to Verify PA =Address to Program
EVD =Data Read from Location EA PD =Data to be Programmed at Location PA
IA =Address: 0000H for manufacturing code, 0001H for device code PVA =Data to be Read from Location PA at Program Verify
ID =ID data read from IA during product ID operation
(Manufacturer = 89H, Device = B4H)
TRUTH TABLE
Mode Description CEnWE OE A0 A9 VPP I/O Pins Supply Current
READ
ONLY
Not Selected HXXXXVPPLO HIGH-Z Standby
Output Disable LH H X X VPPLO HIGH-Z Active
Read LHLA0 A9 VPPLO DOUT Active
I.D. (Mfr.) LHLLVID VPPLO DOUT =89H Active
I.D. (Device) LHLHVID VPPLO DOUT = B4H Active
COMMAND
PROGRAM
Not Selected HXXXXVPPHI HIGH-Z Standby
Output Disable LH H X X VPPHI HIGH-Z Active
Read LHLA0 A9 VPPHI DOUT Active
Write L L HA0 A9 VPPHI DIN Active
L = LOW, H = HIGH, X = Don’t Care
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DC OPERATING CHARACTERISTICS: Over operating ranges
Symbol Characteristics Test Conditions Limits Unit
Min. Max.
IIN Input Leakage Current VIN = 0V to VDD -8 +8 µA
IOUT Output Leakage Current VI/O = 0V to VDD,
CE or OE = VIH, or WE = VIL -40 +40 µA
ICC1 Operating Supply Current CE = VIL, VIN = VIL or VIH,
IOUT = 0mA, f = 8MHz 70 mA
ICC2 VDD Programming Current Programming in Progress 70 mA
ICC3 VDD Erase Current Erasure in Progress 70 mA
ISB1 Standby Current (TTL) CE = VIH 8mA
ISB2 Full Standby Supply Current (CMOS) CE = VDD -0.2V 0.8 mA
IPPS VPP Leakage Current VPP = VPPLO 80 µA
IPP1 VPP Read Current VPP = VPPHI 1.6 mA
IPP2 VPP Programming Current VPP = VPPHI, Programming in Progress 65 mA
IPP3 VPP Erase Current VPP = VPPHI, Erasure in Progress 65 mA
IID A9 I.D. Current A9 = VID, CE = OE = VIL, WE = VIH 1.0 mA
RECOMMENDED OPERATING RANGE2
Symbol Characteristic Min. Typ. Max. Unit
VDD Supply Voltage 4.5 5.0 5.5 V
VPP Programming Voltage 11.4 12.0 12.6 V
VIL Input LOW Voltage -0.530.8 V
VIH Input HIGH Voltage 2.0 VDD+0.5 V
TAOperating
Temperature
C0+25 +70
°C
I-40 +25 +85
M/B -55 +25 +125
VID A9 I.D. Input/Output 11.5 13.0 V
CAPACITANCE 7: TA = 25°C, F = 1.0MHz
Symbol Parameter Max. Unit Condition
CADR Address Input 50
pF VIN3 = 0V
CCE Chip Enable 15
CWE Write Enable 50
COE Output Enable 50
CI/O Data Input/Output 50
ABSOLUTE MAXIMUM RATINGS 7
Symbol Parameter Value Unit
TSTC Storage Temperature -65 to +150 °C
TBIAS Temperature Under Bias -55 to +125 °C
VID Voltage on A9 2-0.5 to +14.0 4, 5 V
IOUT Output Short
Circuit Current 100 6 mA
VI/O Input/Output Voltage 2 -0.5 to +7.0 3V
VPP VPP Supply Voltage 2
During Erase/Program -0.5 to +14.0 4V
VDD Supply Voltage 2 -0.6 to +7.0 4 V
DC OUTPUT CHARACTERISTICS
Symbol Parameter Condition Min. Max. Unit
VOH HIGH Voltage IOH= -2.5mA 2.4 V
VOL LOW Voltage IOL=5.8mA 0.45 V
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AC TEST CONDITIONS
Input Pulse Levels 0V to 3.0V
Input Pulse Rise and Fall Times 5ns
Input and Output
Timing Reference Levels 1.5V
Output Timing Reference
Levels During Verify 0.8V and +2.4V
OUTPUT LOAD
Load CLParameters Measured
1100 pF except tDF, tLZ and tOLZ
230pF tDF, tLZ and tOLZ
AC OPERATING CONDITIONS AND CHARACTERISTICS - READ CYCLE: Over operating ranges
No. Symbol Parameter 120ns 150ns 170ns 200ns 250ns Unit
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
1tRC Read Cycle Time 120 150 170 200 250 ns
2tCE Chip Enable Access Time 120 150 170 200 250 ns
3tACC Address Access Time 120 150 170 200 250 ns
4tOE Output Enable Access Time 50 55 60 60 65 ns
5tLZ Chip Enable to Output in LOW-Z 7, 8 0 0 0 0 0 ns
6tOLZ Output Enable to Output in LOW-Z 7, 8 0 0 0 0 0 ns
7tDF Output Disable to Output in HIGH-Z 7, 8 30 35 40 45 60 ns
8tOH Output Hold from Address, CE or OE Change
(whichever occurs first) 0 0 0 0 0 ns
AC OPERATING CONDITIONS AND CHARACTERISTICS - WRITE CYCLE: Over operating ranges
No. Symbol Parameter 120ns 150ns 170ns 200ns 250ns Unit
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
9tWC Write Cycle Time 120 150 170 200 250 ns
10 tAS Address Setup Time 0 0 0 0 0 ns
11 tAH Address Hold Time 60 60 60 60 60 ns
12 tDS Data Setup Time 50 50 50 50 50 ns
13 tDH Data Hold Time 10 10 10 10 10 ns
14 tWR Write Recovery Time before Read 6 6 6 6 6 µs
15 tRR Read Recover Time before Write 0 0 0 0 0 ns
16 tCS Chip Enable Setup Time before Write 20 20 20 20 20 ns
17 tCH Chip Enable Hold Time 0 0 0 0 0 ns
18 tWP Write Pulse Width 980 80 80 80 80 ns
19 tWPH Write Pulse Width HIGH 920 20 20 20 20 ns
20 tDP Duration of Programming Operation 10 10 10 10 10 µs
21 tDE Duration of Erase Operation 9.5 10.5 9.5 10.5 9.5 10.5 9.5 10.5 9.5 10.5 ms
22 tVPEL VPP Setup Time to Chip Enable LOW 41.0 1.0 1.0 1.0 1.0 µs
1.3V
3.3K
1N914
CL*
DOUT
Figure 1. Output Load
* Including Probe and Jig Capacitance.
DEVICE
UNDER
TEST
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READ CYCLE
ADDRESS
CE
OE
WE
DATA OUT
5.0V
VDD
0V
ERASE CYCLE
ADDRESS
CE
OE
WE
DATA I/O
5.0V
VDD
0V
VPPH
VPP
VPPL
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PROGRAMMING CYCLE 9
ADDRESS
CE
OE
WE
DATA I/O
5.0V
VDD
0V
VPPH
VPP
VPPL
Alternative
Write Timing
CE
WE
NOTES:
1. Each SLCC contains two FLASH memory devices enabled by
separate chip enables. Typically this module would be used as a
x16 device with CE0 and CE1 tied together. When writing
commands to the Command Register under these conditions, the
command shown in the Command Definition Table should be
duplicated to each byte (I/O0 - I/O7, I/O8 - I/O15) of the module.
If the command to be written is 40H like that for Setup
Program/Program, 4040H would be written to the module followed
by the 16 bit data. A single device can be programmed or erased
by writing the appropriate command to the device the operation is
to be performed on while 00H is written to the other devices that
are enabled at the same time.
Care must be taken when doing Program Verify on a single device.
Make certain that no other devices are driving the data bus of the
devices that are not being verified but are enabled along with the
device that is being verified. Any device that is enabled during
Program Verify will be driving the data bus with the data that is
programmed at that address.
2. All voltages are with respect to VSS.
3. -2.0V min. for pulse width less than 20ns (VIL min. = -0.5V at DC
level).
4. Maximum DC voltage on VPP or A9 may over shoot to +14.0V for
periods less than 20ns.
5. Output shorted for no more than 1 second. No more than one
output shorted at a time.
6. Stresses greater than those under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
7. This parameter is guaranteed and not 100% tested.
8. Transition is measured at the point of ±500mV from steady state
voltage.
9. Chip Enable Controlled Writes: Write operations are driven by
the valid combination of Chip Enable and Write Enable. In systems
where Chip Enable defines the write pulse width (within a longer
Write Enable timing waveform) all Set-up, Hold, and inactive Write
Enable times should be measured relative to the Chip Enable
waveform.
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FIGURE 2: WRITE ALGORITHM
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FIGURE 3: ERASE ALGORITHM
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FIGURE 4: HIGH PERFORMANCE PARALLEL ERASURE (Conceptual Device)
NOTE:
[1] You mask the device by
substituting a reset
command for the erase
and verify commands,
that way the erased byte
idles through the next
erase loop.
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FIGURE 5: PARALLEL ERASE FLOW CHART
NOTES:
[1] Wait for VPP to stabilize.
[2] Use Quick-Pulse Programming algorithm.
[3] Initialize Variables:
PLSCNT_HI = High Byte Pulse Counter
PLSCNT_LO = Low Byte Pulse Counter
FLAG = Erase Error Flag
ADRS = Address
E_COM = Erase Command
V_COM = Verify Command
[4] Erase Verify Command stops erasure.
[5] See Figure 6 for subroutine.
[6] When both devices at ADRS are erased,
F_DATA = FFFFH.
[7] Reset commands to default E_COM =
2020H, V_COM = A0A0H before verifying
next ADRS.
[8] Reset device for read operation.
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FIGURE 6: DEVICE ERASE VERIFY AND MASK SUBROUTINE
NOTES:
[1] This subroutine masks the High
byte or Low Byte of the Erase and
Verify commands from executing
during the next operation.
[2] Mask the High byte with 00H.
[3] If the Low byte verifies erasure,
then mask the next erase and verify
commands with FFH (reset).
[4] If the Low byte does not verify,
increment its pulse counter.
[5] Check for max. count. FLAG = 1
denotes a Low byte error.
[6] Repeat sequence for High byte.
[7] FLAG = 2 denotes a High byte
error. FLAG = 3 denotes both High
byte and Low byte errors.
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(48 - PIN LEADLESS STACK) MECHANICAL DRAWING
(48 - PIN STRAIGHT LEADED STACK) MECHANICAL DRAWING
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(48 - PIN ‘’J’’ LEADED STACK) MECHANICAL DRAWING
(48 - PIN GULLWING LEADED STACK) MECHANICAL DRAWING
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ORDERING INFORMATION
(50 - PIN PGA) MECHANICAL DRAWING
Dense-Pac Microsystems, Inc.
7321 Lincoln Way u Garden Grove, California 92841-1428
(714) 898-0007 u (800) 642-4477 (Outside CA) u FAX: (714) 897-1772 u http://www.dense-pac.com
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