SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES *High Current : IC=800mA. *DC Current Gain : hFE=100630 (VCE=1V, Ic=100mA). *For Complementary with PNP type BC328. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - 100 nA Collector Cut-off Current ICBO VCB=25V, IE=0 DC Current Gain (Note) hFE VCE=1V, IC=100mA 100 - 630 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V Base-Emitter Voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Transition Frequency fT VCE=5V, IC=-10mA, f=100MHz - 100 - MHz VCB=10V, f=1MHz, IE=0 - 12 - pF Cob Collector Output Capacitance Note : hFE Classification none:100630, 2000. 2. 28 16:100250, Revision No : 2 25:160400, 40:250630 1/2 BC338 2000. 2. 28 Revision No : 2 2/2