2000. 2. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC338
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·High Current : IC=800mA.
·DC Current Gain : hFE=100～630 (VCE=1V, Ic=100mA).
·For Complementary with PNP type BC328.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : hFE Classification none:100～630, 16:100～250, 25:160～400, 40:250～630
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5V
Collector Current IC800 mA
Emitter Current IE-800 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=25V, IE=0 - - 100 nA
DC Current Gain (Note) hFE VCE=1V, IC=100mA 100 - 630
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V
Base-Emitter Voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V
Transition Frequency fTVCE=5V, IC=-10mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 -12-pF
2000. 2. 28 2/2
BC338
Revision No : 2
