BSS84DW
Document number: DS30204 Rev. 16 - 2 1 of 5
www.diodes.com November 2011
© Diodes Incorporated
BSS84DW
DUAL P-CHANNEL ENHANCEMENT MODE MOS FET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Notes 2 and 3)
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
BSS84DW-7-F Commercial SOT363 3,000/Tape & Reel
BSS84DWQ-13 Automotive SOT363 10,000/Tape & Reel
BSS84DWQ-7 Automotive SOT363 3,000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
K84 YM
K84 YM
BSS84DW
Document number: DS30204 Rev. 16 - 2 2 of 5
www.diodes.com November 2011
© Diodes Incorporated
BSS84DW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage (Note 5) VDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 6) Continuous ID -130 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) PD 300 mW
Thermal Resistance, Junction to Ambient R
θ
JA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -50 -75 ⎯ V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
⎯
⎯
⎯
⎯
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
-0.8 -1.6 -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS
(
ON
)
⎯ 6 10 Ω V
GS = -5V, ID = -0.100A
Forward Transconductance gFS 0.05 ⎯ ⎯ S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 45 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
ON
)
⎯ 10 ⎯ ns VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V
Turn-Off Delay Time tD
(
OFF
)
⎯ 18 ⎯ ns
Notes: 5. RGS ≤ 20KΩ.
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
BSS84DW
Document number: DS30204 Rev. 16 - 2 3 of 5
www.diodes.com November 2011
© Diodes Incorporated
BSS84DW
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fi g. 1 Max Pow er Di ss i pa t i on vs . Ambient Tem pe r ature
A
150
200
250
300
350
0
400
0
-600
-500
-400
-300
-200
-100
0-2
-1
-5
-4-3
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(mA)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25C
A
°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2-3-4-1 -8-7
-6
-5
I, D
R
AI
N
-
C
U
R
R
E
N
T
(A)
D
V , GATE-SOURCE VOL TAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
GS
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GA TE -SOURCE VOLTAGE (V)
Fig . 4 On- R esi s tance vs. Gate-So ur ce Volt age
GS
T= 25C
A
°
T = 125C
A
°
R , NORMALIZED DRAIN-SOURCE
ON-RESIST ANCE ( )
DS(ON)
Ω
0
3
6
9
12
15
-50 -25 0 25 50 125
100
75 150
T , JUNCTION TEMPERATURE (°C)
Fig . 5 On-Resistanc e vs. Junction Tem peratur e
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS(ON)
Ω
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0
I , DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V= -3.5V
GS
V = -4V
GS
V = -4.5V
GS
V = -6V
GS
V = -5V
GS
R
,
O
N-
R
E
S
I
S
T
A
N
C
E
()
DS(ON)
Ω
BSS84DW
Document number: DS30204 Rev. 16 - 2 4 of 5
www.diodes.com November 2011
© Diodes Incorporated
BSS84DW
Package Outline Dimensions
Suggested Pad Layout
SOT363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
BSS84DW
Document number: DS30204 Rev. 16 - 2 5 of 5
www.diodes.com November 2011
© Diodes Incorporated
BSS84DW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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