2N5109
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver,
driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 20 Vdc
VCBO Collector-Base Voltage 40 Vdc
VEBO Emitter-Base Voltage 3.0 Vdc
IC Collector Current 400 mA
Thermal Data
PD Total Device Dissipation @ TC = 75ºC (1)
Derate above 25ºC 2.5
20 Watts
mW/ ºC
Note 1. Total Device dissipation at TA = 25ºC is 1 Watt.
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• 1.2 GHz Current-Gain Bandwidth Product @ 50mA
• Maximum Unilateral Gain = 12dB (typ) @ 200 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N5109
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off) Value
Symbol Test Conditions Min. Typ. Max. Unit
BVCEO(sus) Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
20
-
-
Vdc
BVCER(sus) Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
40
-
-
Vdc
ICEO Collector Cutoff Current
(VCE = 15 Vdc, IB = 0)
-
-
20 µA
IEBO Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
-
-
100
µA
(on)
HFE DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 15.0 Vdc)
5
40
-
-
-
120
-
-
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Unit
fT Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
-
1200
-
MHz
2N5109
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
FUNCTIONAL Value
Symbol Test Conditions Min. Typ. Max. Unit
GU max Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 15Vdc,
f = 200 MHz
-
12
-
dB
MAG Maximum Available Gain IC = 50 mAdc, VCE = 15Vdc,
f = 200 MHz
-
11.2
-
dB
|S21|2 Insertion Gain IC = 50 mAdc, VCE = 15Vdc,
f = 200 MHz
9.5
10.5
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 .082 167 6.77 87 .073 79 .347 -30
200 .255 172 3.56 71 .135 71 .259 -35
300 .288 132 2.39 61 .217 70 .247 -46
400 .298 137 1.91 50 .271 62 .216 -76
500 .368 126 1.61 41 .320 55 .172 -94
600 .404 121 1.38 33 .390 54 .174 -115
700
.462
..
116 1.28 27 .477 48 .163 -145
800 .503 110 1.21 18 .513 38 .190 176
900
.593 105 1.11 12 .535 33 .246 140
1000 .655 95 1.02 9.8 .604 35 .320 122
2N5109
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Efficiency (%)
GPE Freq (MHz)
Freq (MHz)
Gu Max (dB)
IC max (mA)
Package
Device
IC max (mA)
RF (Low Power PA / General Purpose) Selection Guide
MACRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MACRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 8 55 12.5 16 400
POWER MACRO MRF557T NPN 870 1.5 8 55 12.5 16 400
MACRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MACRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866A NPN 400 1 10 45 28 30 400
SO-8 MRF3866, R1, R2 NPN 400 1 10 45 28 30 400
POWER MACRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8
MRF4427, R2
NPN
175
0.15
18
60
12
20
400
TO-39
2N4427
NPN
175
1
10
50
12
20
400
POWER MACRO
MRF553
NPN
175
1.5
11.5
60
12.5
16
500
POWER MACRO
MRF553T
NPN
175
1.5
11.5
50
12.5
16
500
TO-39
MRF607
NPN
175
1.75
11.5
50
12.5
16
330
TO-39
2N6255
NPN
175
3
7.8
50
12.5
18
1000
TO-72
2N5179
NPN
200
20
6
12
50
Pout (watts)
GPE (dB)
GPE VCC
BVCEO
Type
Package
Device
Type
NF (dB)
NF IC (mA)
NF VCE
GN (dB)
Ftau (MHz)
Ccb(pF)
BVCEO
TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50
TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MACRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39
MRF545
PNP
14
1400
2
70
400
TO-39
MRF544
NPN
13.5
1500
70
400
RF (LNA / General Purpose) Selection Guide
1
3
1
2
3
1
3
4
1
8
Macro X
Power Macro
Macro T SO-8
RF Low Power PA, LNA, and General Purpose RF Discrete Selector Guide
Low Cost RF Plastic Package Options
2N5109
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
