2N5109 - Advanced Power Technology

2N5109

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver,

driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 20 Vdc

VCBO Collector-Base Voltage 40 Vdc

VEBO Emitter-Base Voltage 3.0 Vdc

IC Collector Current 400 mA

Thermal Data

PD Total Device Dissipation @ TC = 75ºC (1)

Derate above 25ºC 2.5

20 Watts

mW/ ºC

Note 1. Total Device dissipation at TA = 25ºC is 1 Watt.

1. Emitter

2. Base

3. Collector

TO-39

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• 1.2 GHz Current-Gain Bandwidth Product @ 50mA

• Maximum Unilateral Gain = 12dB (typ) @ 200 MHz

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

2N5109

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC

(off) Value

Symbol Test Conditions Min. Typ. Max. Unit

BVCEO(sus) Collector-Emitter Sustaining Voltage

(IC=5.0 mAdc, IB=0)

20

-

Vdc

BVCER(sus) Collector-Emitter Sustaining Voltage

(IC = 5.0 mAdc, RBE = 10 ohms)

40

-

Vdc

ICEO Collector Cutoff Current

(VCE = 15 Vdc, IB = 0)

-

20 µA

IEBO Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

-

100

µA

(on)

HFE DC Current Gain

(IC = 360 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 15.0 Vdc)

5

40

-

120

-

DYNAMIC Value

Symbol Test Conditions Min. Typ. Max. Unit

fT Current-Gain - Bandwidth Product

(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)

-

1200

-

MHz

2N5109

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

FUNCTIONAL Value

Symbol Test Conditions Min. Typ. Max. Unit

GU max Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 15Vdc,

f = 200 MHz

-

12

-

dB

MAG Maximum Available Gain IC = 50 mAdc, VCE = 15Vdc,

f = 200 MHz

-

11.2

-

dB

|S21|2 Insertion Gain IC = 50 mAdc, VCE = 15Vdc,

f = 200 MHz

9.5

10.5

-

dB

Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA

f

S11

S21

S12

S22

(MHz)

|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ

100 .082 167 6.77 87 .073 79 .347 -30

200 .255 172 3.56 71 .135 71 .259 -35

300 .288 132 2.39 61 .217 70 .247 -46

400 .298 137 1.91 50 .271 62 .216 -76

500 .368 126 1.61 41 .320 55 .172 -94

600 .404 121 1.38 33 .390 54 .174 -115

700

.462

..

116 1.28 27 .477 48 .163 -145

800 .503 110 1.21 18 .513 38 .190 176

900

.593 105 1.11 12 .535 33 .246 140

1000 .655 95 1.02 9.8 .604 35 .320 122

2N5109

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Efficiency (%)

GPE Freq (MHz)

Freq (MHz)

Gu Max (dB)

IC max (mA)

Package

Device

IC max (mA)

RF (Low Power PA / General Purpose) Selection Guide

MACRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150

MACRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150

SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200

POWER MACRO MRF557 NPN 870 1.5 8 55 12.5 16 400

POWER MACRO MRF557T NPN 870 1.5 8 55 12.5 16 400

MACRO X MRF559 NPN 512 0.5 10 65 7.5 16 150

MACRO X MRF559 NPN 512 0.5 13 60 12.5 16 150

TO-39 2N3866A NPN 400 1 10 45 28 30 400

SO-8 MRF3866, R1, R2 NPN 400 1 10 45 28 30 400

POWER MACRO MRF555 NPN 470 1.5 11 50 12.5 16 400

POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400

SO-8

MRF4427, R2

NPN

175

0.15

18

60

12

20

400

TO-39

2N4427

NPN

175

1

10

50

12

20

400

POWER MACRO

MRF553

NPN

175

1.5

11.5

60

12.5

16

500

POWER MACRO

MRF553T

NPN

175

1.5

11.5

50

12.5

16

500

TO-39

MRF607

NPN

175

1.75

11.5

50

12.5

16

330

TO-39

2N6255

NPN

175

3

7.8

50

12.5

18

1000

TO-72

2N5179

NPN

200

20

6

12

50

Pout (watts)

GPE (dB)

GPE VCC

BVCEO

Type

Package

Device

Type

NF (dB)

NF IC (mA)

NF VCE

GN (dB)

Ftau (MHz)

Ccb(pF)

BVCEO

TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400

TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400

SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400

TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50

TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40

TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150

TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30

TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50

MACRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35

MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100

SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200

MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200

Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30

TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50

TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40

MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200

TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200

MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100

MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70

MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35

MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30

TO-39

MRF545

PNP

14

1400

2

70

400

TO-39

MRF544

NPN

13.5

1500

70

400

RF (LNA / General Purpose) Selection Guide

1

3

1

2

3

1

3

4

1

8

Macro X

Power Macro

Macro T SO-8

RF Low Power PA, LNA, and General Purpose RF Discrete Selector Guide

Low Cost RF Plastic Package Options

2N5109

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.