1. Product profile
1.1 General description
PNP medium power transistor series in Surfa ce-Mounte d Device (SMD) plastic p ackages.
[1] Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plas tic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
High-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
Rev. 9 — 19 October 2011 Product data sheet
Table 1. Product overview
Type number[1] Package NPN complement
Nexperia JEITA JEDEC
BCP53 SOT223 SC-73 - BCP56
BCX53 SOT89 SC-62 TO-243 BCX56
BC53PA SOT1061 - - BC56PA
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 80 V
ICcollector current - - 1A
ICM peak collector current single pulse; tp1ms - - 2A
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 2 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
2. Pinning information
hFE DC current gain VCE =2V;
IC=150 mA 63 - 250
hFE selection -10 VCE =2V;
IC=150 mA 63 - 160
hFE selection -16 VCE =2V;
IC=150 mA 100 - 250
Table 2. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT223
1base
2 collector
3emitter
4 collector
SOT89
1emitter
2 collector
3base
SOT1061
1base
2emitter
3 collector
132
4
sym028
2, 4
3
1
321
006aaa231
2
1
3
Transparent top view
12
3
sym013
3
2
1
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 3 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
3. Ordering information
[1] Valid for all available selection groups.
4. Marking
Tabl e 4. Ordering information
Type number[1] Package
Name Description Version
BCP53 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads SOT223
BCX53 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads SOT89
BC53PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 20.65 mm SOT1061
Table 5. Marking codes
Type number Marking code
BCP53 BCP53
BCP53-10 BCP53/10
BCP53-16 BCP53/16
BCX53 AH
BCX53-10 AK
BCX53-16 AL
BC53PA BV
BC53-10PA BW
BC53-16PA BX
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 4 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 100 V
VCEO collector-emitter voltage open base - 80 V
VEBO emitter-base voltage open collector - 5V
ICcollector current - 1A
ICM peak collector current single pulse;
tp1ms -2A
IBbase current - 0.3 A
IBM peak base current single pulse;
tp1ms -0.3 A
Ptot total power dissipation Tamb 25 C
BCP53 [1] -0.65W
[2] -1.00W
[3] -1.35W
BCX53 [1] -0.50W
[2] -0.95W
[3] -1.35W
BC53PA [1] -0.42W
[2] -0.83W
[3] -1.10W
[4] -0.81W
[5] -1.65W
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 5 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3. Power derating curves S OT 10 6 1
Tamb (°C)
–75 17512525 75–25
006aac674
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
Tamb (°C)
–75 17512525 75–25
006aac675
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
Tamb (°C)
–75 17512525 75–25
006aac676
1.0
0.5
1.5
2.0
Ptot
(W)
0.0
(1)
(2)
(3)
(4)
(5)
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 6 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
BCP53 [1] --192K/W
[2] --125K/W
[3] --93K/W
BCX53 [1] --250K/W
[2] --132K/W
[3] --93K/W
BC53PA [1] --298K/W
[2] --151K/W
[3] --114K/W
[4] --154K/W
[5] --76K/W
Rth(j-sp) thermal resistance from
junction to solder poi nt
BCP53 - - 16 K/W
BCX53 - - 16 K/W
BC53PA - - 20 K/W
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 7 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junc tio n to ambient as a function of pulse duration for SO T223;
typical values
FR4 PCB, mounting pad for collector 1 cm2
Fig 5. Transient thermal impedance from junc tio n to ambient as a function of pulse duration for SO T223;
typical values
006aac677
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac678
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 8 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
FR4 PCB, mounting pad for collector 6 cm2
Fig 6. Transient thermal impedance from junc tio n to ambient as a function of pulse duration for SO T223;
typical values
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac679
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac680
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 9 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
FR4 PCB, mounting pad for collector 1 cm2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac681
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac682
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1
0.2 0.33
0.5 0.75
0.02
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 10 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
FR4 PCB, single-sided copper, standard footprint
Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac683
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac684
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 11 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, 4-layer copper, standard footprint
Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac685
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac686
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 12 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
7. Characteristics
[1] Pulse test: tp300 s; = 0.02.
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac687
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =30 V; IE=0A - - 100 nA
VCB =30 V; IE=0A;
Tj= 150 C--10 A
IEBO emitter-base cut-of f
current VEB =5V; I
C=0A - - 100 nA
hFE DC current gain VCE =2V
IC=5mA 63 - -
IC=150 mA 63 - 250
IC=500 mA [1] 40 - -
DC curren t ga in VCE =2V
hFE selection -10 IC=150 mA 63 - 160
hFE selection -16 IC=150 mA 100 - 250
VCEsat collector-emitter
saturation voltage IC=500 mA;
IB=50 mA [1] --0.5 V
VBE base-emitter vo ltage VCE =2V; I
C=500 mA [1] --1V
Cccollector capacitance VCB =10 V; IE=i
e=0A;
f=1MHz -15-pF
fTtransition frequency VCE =5V; I
C=50 mA;
f=100MHz - 145 - MHz
© Nexperia B.V. 2017. All rights reserved
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 9 — 19 October 2011 13 of 22
Nexperia BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
VCE =2V
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Tamb =25C
Fig 15. DC current gain as a function of collector
current; typical values Fig 16. Collector current as a function of
collector-emitter voltage; typical values
VCE =2V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 100 C
IC/IB=10
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Fig 17. Ba se-emitter voltage as a function of collector
current; typical values Fig 18. Collector- em itter saturatio n voltage as a
function of collector current; typical values
006aac688
100
200
300
hFE
0
IC (A)
–10–4 –10–1–10–3 –10–1
–10–2
(1)
(2)
(3)
006aac689
–0.4
–0.8
–1.2
VBE
(V)
0.0
IC (mA)
–10–1 –104
–103
–1 –102
–10
(1)
(2)
(3)
006aac690
–1
–10–1
–10
VCEsat
(V)
–10–2
IC (mA)
–10–1 –104
–103
–1 –102
–10
(1)
(2)
(3)