PD - 94641B IRF7494 HEXFET(R) Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current 5.2A A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S ID SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 150 V VGS Gate-to-Source Voltage 20 ID @ TA = 25C Continuous Drain Current, V GS @ 10V 5.2 ID @ TA = 100C Continuous Drain Current, V GS @ 10V 3.7 c A IDM Pulsed Drain Current PD @TA = 25C Maximum Power Dissipation 3.0 W Linear Derating Factor 0.02 W/C 3.0 -55 to + 150 V/ns C 42 h dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) e Typ. Max. Units --- 20 C/W --- 50 Notes through are on page 8 www.irf.com 1 03/27/08 IRF7494 Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS V(BR)DSS/TJ RDS(on) Drain-to-Source Breakdown Voltage 150 --- --- Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 0.15 35 --- 44 VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current 2.5 --- --- --- 4.0 10 --- --- 250 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage --- --- --- --- 100 -100 V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 3.1A f V A VDS = VGS, ID = 250A VDS = 120V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Qg Qgs Forward Transconductance 12 --- --- S VDS = 50V, ID = 5.2A Total Gate Charge Gate-to-Source Charge --- --- 36 7.5 54 --- nC ID = 3.1A VDS = 75V Qgd td(on) Gate-to-Drain ("Miller") Charge Turn-On Delay Time --- --- 13 15 --- --- tr td(off) Rise Time Turn-Off Delay Time --- --- 13 36 --- --- tf Fall Time --- 14 --- VGS = 10V Ciss Coss Input Capacitance Output Capacitance --- --- 1750 220 --- --- VGS = 0V VDS = 25V Crss Coss Reverse Transfer Capacitance Output Capacitance --- --- 100 870 --- --- Coss Coss eff. Output Capacitance Effective Output Capacitance --- --- 120 170 --- --- VGS = 10V VDD = 75V ns pF ID = 3.1A RG = 6.5 f f = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 120V, = 1.0MHz VGS = 0V, VDS = 0V to 120V g Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. --- Max. 370 Units mJ --- 3.1 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 2.7 ISM (Body Diode) Pulsed Source Current --- --- 42 VSD trr Qrr ton 2 c (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Conditions D MOSFET symbol A --- --- --- 55 1.3 --- V ns --- 140 --- nC showing the integral reverse G p-n junction diode. TJ = 25C, IS = 3.1A, VGS = 0V TJ = 25C, IF = 3.1A, VDD = 25V di/dt = 100A/s S f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF7494 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3 IRF7494 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRF7494 VDS VGS RD D.U.T. RG + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS Fig 9. Maximum Drain Current vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJA ) C/W 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.1 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7494 Fig 12. On-Resistance vs. Drain Current L DUT VCC Fig 13. On-Resistance vs. Gate Voltage QG VGS QGS QGD 0 1K VG Charge Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A 0.01 Fig 15c. Maximum Avalanche Energy vs. Drain Current www.irf.com IRF7494 SO-8 Package Outline Dimensions are shown in millimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & \ >@ ;/ ;F & $ % 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'(<:: 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF7494 SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 77mH, RG = 25, IAS = 3.1A. When mounted on 1 inch square copper board, t 10 sec. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD 3.1A, di/dt 270A/s, VDD V(BR)DSS, TJ 175C. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/08 8 www.irf.com