www.irf.com 1
03/27/08
IRF7494
HEXFET® Power MOSFET
lHigh frequency DC-DC converters
Benefits
Applications
lLow Gate to Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
Notes through are on page 8
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
VDSS RDS(on) max ID
150V 44m
:
@VGS = 10V 5.2A
Absolute Maximum Ratings
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
c
PD @TA = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
dv/dt Peak Diode Recover
y
dv/dt
h
V/ns
TJ Operating Junction and °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20 °C/W
RθJA Junction-to-Ambient
(
P
C
B Mount
)
e
––– 50
3.0
Max.
5.2
3.7
42
150
± 20
3.0
-55 to + 150
0.02
PD - 94641B
IRF7494
2www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V
∆V(BR)DSS
/
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.15 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 35 44 mΩ
VGS(th) Gate Threshold Voltage 2.5 ––– 4.0 V
IDSS Drain-to-Source Leakage Current ––– ––– 10 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
gfs Forward Transconductance 12 ––– ––– S
QgTotal Gate Charge ––– 36 54
Qgs Gate-to-Source Charge ––– 7.5 ––– nC
Qgd Gate-to-Drain ("Miller") Charge ––– 13 –––
td(on) Turn-On Delay Time ––– 15 –––
trRise Time –––13–––
td(off) Turn-Off Delay Time ––– 36 ––– ns
tfFall Time –––14–––
Ciss Input Capacitance ––– 1750 –––
Coss Output Capacitance ––– 220 –––
Crss Reverse Transfer Capacitance ––– 100 ––– pF
Coss Output Capacitance ––– 870 –––
Coss Output Capacitance ––– 120 –––
Coss eff. Effective Output Capacitance ––– 170 –––
Avalanche Characteristics
Parameter Units
EAS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
d
mJ
IAR
A
va
l
anc
h
e
C
urrent
A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
ISContinuous Source Current ––– ––– 2.7
(Body Diode) A
ISM Pulsed Source Current ––– ––– 42
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 55 ––– ns
Qrr Reverse Recovery Charge ––– 140 ––– nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 20V
VGS = -20V
Max.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
g
VGS = 10V
f
VDD = 75V
ID = 3.1A
RG = 6.5Ω
TJ = 25°C, IS = 3.1A, VGS = 0V
f
TJ = 25°C, IF = 3.1A, VDD = 25V
di/dt = 100A/µs
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.1A
f
VDS = VGS, ID = 250µA
VDS = 120V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 10V
f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
370
3.1
Typ.
–––
–––
Conditions
VDS = 50V, ID = 5.2A
ID = 3.1A
VDS = 75V
IRF7494
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
vs. Temperature
IRF7494
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Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
IRF7494
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 9. Maximum Drain Current vs.
Ambient Temperature
0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.1
1
10
100
Thermal Response ( Z thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
IRF7494
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Fig 13. On-Resistance vs. Gate Voltage
Fig 12. On-Resistance vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
tp
V
(BR)D SS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
1K
VCC
DUT
0
L
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
IRF7494
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SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF7494
8www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 77mH,
RG = 25Ω, IAS = 3.1A.
When mounted on 1 inch square copper
board, t ≤ 10 sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 3.1A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/08
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/