IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 128K x 32, 128K x 36 and 256K x 18 PIPELINE 'NO WAIT' STATE BUS SRAM ISSI (R) NOVEMBER 2002 FEATURES DESCRIPTION * * * * * * The 4 Meg 'NP' product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for network and communications customers. They are organized as 131,072 words by 32 bits, 131,072 words by 36 bits and 262,144 words by 18 bits, fabricated with ISSI's advanced CMOS technology. * * * * * * * * * * 100 percent bus utilization No wait cycles between Read and Write Internal self-timed write cycle Individual Byte Write Control Single R/W (Read/Write) control pin Clock controlled, registered address, data and control Interleaved or linear burst sequence control using MODE input Three chip enables for simple depth expansion and address pipelining for TQFP Power Down mode Common data inputs and data outputs CKE pin to enable clock and suspend operation JEDEC 100-pin TQFP and 119 PBGA packages Single +3.3V power supply ( 5%) NP Version: 3.3V I/O Supply Voltage NLP Version: 2.5V I/O Supply Voltage Industrial temperature available Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values. All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW. Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written. A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected. FAST ACCESS TIME Symbol tKQ tKC Parameter Clock Access Time Cycle Time Frequency -150 3.8 6.7 150 -133 4.2 7.5 133 -100 5 10 100 Units ns ns MHz Copyright (c) 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 1 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) BLOCK DIAGRAM A [0:16] or A [0:17] ADDRESS REGISTER A2-A16 or A2-A17 MODE A0-A1 CLK CONTROL LOGIC K CKE WRITE ADDRESS REGISTER 128Kx32; 128Kx36; 256Kx18 MEMORY ARRAY BURST ADDRESS COUNTER A'0-A'1 WRITE ADDRESS REGISTER K DATA-IN REGISTER K DATA-IN REGISTER CE CE2 CE2 ADV WE BWYX } CONTROL REGISTER K CONTROL LOGIC (X=a,b,c,d or a,b) OUTPUT REGISTER BUFFER OE ZZ DQa0-DQd7 or DQa0-DQb8 DQPa-DQPd 2 32, 36 or 18 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) PIN CONFIGURATION 100-Pin TQFP 1 2 3 4 5 6 7 VCCQ A6 A4 NC A8 A16 VCCQ NC CE2 A3 ADV A9 CE2 NC NC A7 A2 VCC A12 A15 NC DQc1 NC GND NC GND NC DQb8 DQc2 DQc3 GND CE GND DQb6 DQb7 VCCQ DQc4 GND OE GND DQb5 VCCQ DQc5 DQc6 BWc NC BWb DQb4 DQb3 DQc7 DQc8 GND WE GND DQb2 DQb1 VCCQ VCC NC VCC NC VCC VCCQ DQd1 DQd2 GND CLK GND DQa7 DQa8 DQd4 DQd3 BWd NC BWa DQa5 DQa6 VCCQ DQd5 GND CKE GND DQa4 VCCQ DQd6 DQd7 GND A1 GND DQa3 DQa2 DQd8 NC GND A0 GND NC DQa1 NC A5 MODE VCC VCC A13 NC NC NC A10 A11 A14 NC ZZ VCCQ NC NC NC NC NC VCCQ A6 A7 CE CE2 BWd BWc BWb BWa CE2 VCC GND CLK WE CKE OE ADV NC NC A8 A9 119-pin PBGA (Top View) A B C D E F G H J K L M N P R NC DQc1 DQc2 VCCQ GND DQc3 DQc4 DQc5 DQc6 GND VCCQ DQc7 DQc8 VCC VCC VCC GND DQd1 DQd2 VCCQ GND DQd3 DQd4 DQd5 DQd6 GND VCCQ DQd7 DQd8 NC NC DQb8 DQb7 VCCQ GND DQb6 DQb5 DQb4 DQb3 GND VCCQ DQb2 DQb1 GND VCC VCC ZZ DQa8 DQa7 VCCQ GND DQa6 DQa5 DQa4 DQa3 GND VCCQ DQa2 DQa1 NC MODE A5 A4 A3 A2 A1 A0 NC NC GND VCC NC NC A10 A11 A12 A13 A14 A15 A16 T 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 1 79 2 78 3 77 4 76 5 75 6 74 7 73 8 72 9 71 10 70 11 69 12 68 13 67 14 66 15 65 16 64 17 63 18 62 19 61 20 60 21 59 22 58 23 57 24 56 25 55 26 54 27 53 28 52 29 51 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 U 128K x 32 PIN DESCRIPTIONS A0, A1 Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. A2-A16 Synchronous Address Inputs CLK Synchronous Clock ADV Synchronous Burst Address Advance BWa-BWd Synchronous Byte Write Enable WE Write Enable CKE Clock Enable CE, CE2, CE2 Synchronous Chip Enable OE Output Enable DQa-DQd Synchronous Data Input/Output MODE Burst Sequence Mode Selection VCC +3.3V Power Supply GND Ground VCCQ Isolated Output Buffer Supply: +3.3V/2.5V ZZ Snooze Enable Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 3 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) PIN CONFIGURATION 100-Pin TQFP 1 2 3 4 5 6 7 VCCQ A6 A4 NC A8 A16 VCCQ NC CE2 A3 ADV A9 CE2 NC NC A7 A2 VCC A12 A15 NC DQc1 DQPc GND NC GND DQPb DQb8 DQc2 DQc3 GND CE GND DQb6 DQb7 VCCQ DQc4 GND OE GND DQb5 VCCQ DQc5 DQc6 BWc NC BWb DQb4 DQb3 DQc7 DQc8 GND WE GND DQb2 DQb1 VCCQ VCC NC VCC NC VCC VCCQ DQd1 DQd2 GND CLK GND DQa7 DQa8 DQd4 DQd3 BWd NC BWa DQa5 DQa6 VCCQ DQd5 GND CKE GND DQa4 VCCQ DQd6 DQd7 GND A1 GND DQa3 DQa2 DQd8 DQPd GND A0 GND DQPa DQa1 NC A5 MODE VCC VCC A13 NC NC NC A10 A11 A14 NC ZZ VCCQ NC NC NC NC NC VCCQ A6 A7 CE CE2 BWd BWc BWb BWa CE2 VCC GND CLK WE CKE OE ADV NC NC A8 A9 119-pin PBGA (Top View) A B C D E F G H J K L M N P R DQPc DQc1 DQc2 VCCQ GND DQc3 DQc4 DQc5 DQc6 GND VCCQ DQc7 DQc8 VCC VCC VCC GND DQd1 DQd2 VCCQ GND DQd3 DQd4 DQd5 DQd6 GND VCCQ DQd7 DQd8 DQPd DQPb DQb8 DQb7 VCCQ GND DQb6 DQb5 DQb4 DQb3 GND VCCQ DQb2 DQb1 GND VCC VCC ZZ DQa8 DQa7 VCCQ GND DQa6 DQa5 DQa4 DQa3 GND VCCQ DQa2 DQa1 DQPa MODE A5 A4 A3 A2 A1 A0 NC NC GND VCC NC NC A10 A11 A12 A13 A14 A15 A16 T 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 1 79 2 78 3 77 4 76 5 75 6 74 7 73 8 72 9 71 10 70 11 69 12 68 13 67 14 66 15 65 16 64 17 63 18 62 19 61 20 60 21 59 22 58 23 57 24 56 25 55 26 54 27 53 28 52 29 51 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 U 128K x 36 PIN DESCRIPTIONS A0, A1 4 Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. A2-A16 Synchronous Address Inputs CLK Synchronous Clock ADV Synchronous Burst Address Advance BWa-BWd Synchronous Byte Write Enable WE Write Enable CKE Clock Enable CE, CE2, CE2 Synchronous Chip Enable OE Output Enable DQa-DQd Synchronous Data Input/Output MODE Burst Sequence Mode Selection VCC +3.3V Power Supply GND Ground VCCQ Isolated Output Buffer Supply: +3.3V/2.5V ZZ Snooze Enable DQPa-DQPd Parity Data I/O Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) PIN CONFIGURATION 100-Pin TQFP 1 2 3 4 5 6 7 VCCQ A6 A4 NC A8 A16 VCCQ NC CE2 A3 ADV A9 CE2 NC NC A7 A2 VCC A12 A15 NC DQ9 NC GND NC GND DQP1 NC NC DQ10 GND CE GND NC DQ8 VCCQ NC GND OE GND DQ7 VCCQ NC DQ11 BWb A17 NC NC DQ6 DQ12 NC GND WE GND DQ5 NC VCCQ VCC NC VCC NC VCC VCCQ NC DQ13 GND CLK GND NC DQ4 DQ14 NC NC NC BWa DQ3 NC VCCQ DQ15 GND CKE GND NC VCCQ DQ16 NC GND A1 GND DQ2 NC NC DQP2 GND A0 GND NC DQ1 NC A5 MODE VCC VCC A13 NC NC A10 A11 NC A14 NC ZZ VCCQ NC NC NC NC NC VCCQ A6 A7 CE CE2 NC NC BWb BWa CE2 VCC GND CLK WE CKE OE ADV NC NC A8 A9 119-pin PBGA (Top View) (B) A B C D E F G H J K L M N P R NC NC NC VCCQ GND NC NC DQ9 DQ10 GND VCCQ DQ11 DQ12 VCC VCC VCC GND DQ13 DQ14 VCCQ GND DQ15 DQ16 DQP2 NC GND VCCQ NC NC NC A10 NC NC VCCQ GND NC DQP1 DQ8 DQ7 GND VCCQ DQ6 DQ5 GND VCC VCC ZZ DQ4 DQ3 VCCQ GND DQ2 DQ1 NC NC GND VCCQ NC NC NC MODE A5 A4 A3 A2 A1 A0 NC NC GND VCC NC NC A11 A12 A13 A14 A15 A16 A17 T 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 1 79 2 78 3 77 4 76 5 75 6 74 7 73 8 72 9 71 10 70 11 69 12 68 13 67 14 66 15 65 16 64 17 63 18 62 19 61 20 60 21 59 22 58 23 57 24 56 25 55 26 54 27 53 28 52 29 51 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 U 256K x 18 PIN DESCRIPTIONS A0, A1 Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. A2-A17 Synchronous Address Inputs CLK Synchronous Clock ADV Synchronous Burst Address Advance BWa-BWb Synchronous Byte Write Enable WE Write Enable CKE Clock Enable CE, CE2, CE2 Synchronous Chip Enable OE Output Enable DQ1-DQ16 Synchronous Data Input/Output MODE Burst Sequence Mode Selection VCC +3.3V Power Supply GND Ground VCCQ Isolated Output Buffer Supply: +3.3V/2.5V ZZ Snooze Enable DQP1-DQP2 Parity Data I/O DQP1 is parity for DQ1-8; DQP2 is parity for DQ9-16 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 5 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) PIN CONFIGURATION 119-pin PBGA (Top View) (B2) 1 2 3 4 5 6 7 VCCQ A A NC A A VCCQ NC CE2 A ADV A CE2 NC NC A A VCC A A NC DQ9 NC GND NC GND DQP1 NC NC DQ10 GND CE GND NC DQ8 VCCQ NC GND OE GND DQ7 VCCQ NC DQ11 BWb NC GND NC DQ6 DQ12 NC GND WE GND DQ5 NC VCCQ VCC NC VCC NC VCC VCCQ NC DQ13 GND CLK GND NC DQ4 DQ14 NC GND NC BWa DQ3 NC VCCQ DQ15 GND CKE GND NC VCCQ DQ16 NC GND A1 GND DQ2 NC NC DQP2 GND A0 GND NC DQ1 NC A MODE VCC VCC A NC NC A A NC A A ZZ VCCQ NC NC NC NC NC VCCQ A B C D E F G H J K L M N P R T U 256K x 18 PIN DESCRIPTIONS A0, A1 6 Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. A2-A17 Synchronous Address Inputs CLK Synchronous Clock ADV Synchronous Burst Address Advance BWa-BWb Synchronous Byte Write Enable WE Write Enable CKE Clock Enable CE, CE2, CE2 Synchronous Chip Enable OE Output Enable DQ1-DQ16 Synchronous Data Input/Output MODE Burst Sequence Mode Selection VCC +3.3V Power Supply GND Ground VCCQ Isolated Output Buffer Supply: +3.3V/2.5V ZZ Snooze Enable DQP1-DQP2 Parity Data I/O DQP1 is parity for DQ1-8; DQP2 is parity for DQ9-16 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) STATE DIAGRAM READ READ READ BURST WRITE BEGIN READ DS DS READ WRITE DESELECT BURST BURST READ BEGIN WRITE WRITE BURST DS BURST DS DS WRITE READ WRITE BURST WRITE BURST SYNCHRONOUS TRUTH TABLE(1) Operation Not Selected Continue Begin Burst Read Continue Burst Read NOP/Dummy Read Dummy Read Begin Burst Write Continue Burst Write NOP/Write Abort Write Abort Ignore Clock Address Used CS CS1 CS2 CS CS2 ADV WE BW BWx OE CKE CLK N/A External Address Next Address External Address Next Address External Address Next Address N/A Next Address Current Address X L X L X L X L X X X H X H X H X H X X X L X L X L X L X X H L H L H L H L H X X H X H X L X L X X X X X X X L L H H X X L L H H X X X X X L L L L L L L L L H Notes: 1. "X" means don't care. 2. The rising edge of clock is symbolized by 3. A continue deselect cycle can only be entered if a deselect cycle is executed first. 4. WE = L means Write operation in Write Truth Table. WE = H means Read operation in Write Truth Table. 5. Operation finally depends on status of asynchronous pins (ZZ and OE). Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 7 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) ASYNCHRONOUS TRUTH TABLE(1) Operation ZZ OE I/O STATUS Sleep Mode H L L L L X L H X X High-Z DQ High-Z Din, High-Z High-Z Read Write Deselected Notes: 1. X means "Don't Care". 2. For write cycles following read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur. 3. Sleep Mode means power Sleep Mode where stand-by current does not depend on cycle time. 4. Deselected means power Sleep Mode where stand-by current depends on cycle time. WRITE TRUTH TABLE (x18) Operation READ WRITE BYTE a WRITE BYTE b WRITE ALL BYTEs WRITE ABORT/NOP WE BW BWa BW BWb H L L L L X L H L H X H L L H Notes: 1. X means "Don't Care". 2. All inputs in this table must beet setup and hold time around the rising edge of CLK. WRITE TRUTH TABLE (x32/x36) Operation READ WRITE BYTE a WRITE BYTE b WRITE BYTE c WRITE BYTE d WRITE ALL BYTEs WRITE ABORT/NOP WE BW BWa BW BWb BW BWc BW BWd H L L L L L L X L H H H L H X H L H H L H X H H L H L H X H H H L L H Notes: 1. X means "Don't Care". 2. All inputs in this table must beet setup and hold time around the rising edge of CLK. 8 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) INTERLEAVED BURST ADDRESS TABLE (MODE = VCC) External Address A1 A0 1st Burst Address A1 A0 2nd Burst Address A1 A0 3rd Burst Address A1 A0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 LINEAR BURST ADDRESS TABLE (MODE = GND) 0,0 A1', A0' = 1,1 0,1 1,0 ABSOLUTE MAXIMUM RATINGS(1) (MODE = GND) Symbol TSTG PD IOUT VIN, VOUT VIN Parameter Storage Temperature Power Dissipation Output Current (per I/O) Voltage Relative to GND for I/O Pins Voltage Relative to GND for for Address and Control Inputs Value -65 to +150 1.6 100 -0.5 to VCCQ + 0.3 -0.3 to 4.6 Unit C W mA V V Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit. 3. This device contains circuitry that will ensure the output devices are in High-Z at power up. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 9 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) OPERATING RANGE Range Commercial Ambient Temperature 0C to +70C Industrial DEVICE 61NPXXXXX 61NLPXXXXX 61NPXXXXX 61NLPXXXXX -40C to +85C VCC 3.3V 5% 3.3V 5% 3.3V 5% 3.3V 5% VCCQ 3.3V 5% 2.5V 5% 3.3V 5% 2.5V 5% DC ELECTRICAL CHARACTERISTICS (Over Operating Range) 2.5V 3.3V Symbol Parameter Test Conditions Min. Max. Min. Max. Unit VOH Output HIGH Voltage IOH = -4.0 mA (3.3V VCCQ) IOH = 1.0 mA (2.5V VCCQ) 2.0 -- 2.4 -- V VOL Output LOW Voltage IOL = 8.0 mA (3.3V VCCQ) IOL = 1.0 mA (2.5V VCCQ) -- 0.4 -- 0.4 V VIH Input HIGH Voltage 1.7 VCC + 0.3 2.0 VCC + 0.3 V VIL Input LOW Voltage -0.3 0.7 -0.3 0.8 V -5 5 -5 5 A -5 5 -5 5 A Unit ILI Input Leakage Current GND VIN VCC ILO Output Leakage Current GND VOUT VCCQ, OE = VI (1) POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -150 MAX x18 x32/36 -133 MAX x18 x32/36 -100 MAX x18 x32/36 Symbol Parameter Test Conditions ICC AC Operating Supply Current Device Selected, Com. OE = VIH, ZZ VIL, IND. All Inputs 0.2V OR VCC - 0.2V, Cycle Time tKC min. 305 -- 305 -- 290 305 290 305 275 290 275 290 mA ISB Standby Current TTL Input Device Deselected, COM. VCC = Max., Ind. All Inputs 0.2V OR VCC - 0.2V, ZZ VIL, f = Max. 90 -- 90 -- 80 90 80 90 70 80 70 80 mA ISBI Standby Current CMOS Input Device Deselected, Com. VCC = Max., Ind. VIN GND + 0.2V or VCC - 0.2V f=0 10 -- 10 -- 10 15 10 15 10 15 10 15 mA Note: 1. MODE pin has an internal pullup and should be tied to Vcc or GND. It exhibits 30 A maximum leakage current when tied to GND + 0.2V or Vcc - 0.2V. 10 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) CAPACITANCE(1,2) Symbol Parameter CIN Input Capacitance COUT Input/Output Capacitance Conditions Max. Unit VIN = 0V 6 pF VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25C, f = 1 MHz, Vcc = 3.3V. 3.3V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 1.5 ns 1.5V See Figures 1 and 2 3.3V I/O OUTPUT LOAD EQUIVALENT 317 +3.3V ZO = 50 OUTPUT OUTPUT 50 351 5 pF Including jig and scope 1.5V Figure 1 Figure 2 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 11 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) 2.5V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 2.5V 1.5 ns 1.25V See Figures 3 and 4 2.5V I/O OUTPUT LOAD EQUIVALENT 1,667 +2.5V ZO = 50 OUTPUT OUTPUT 50 1,538 1.25V Figure 3 12 5 pF Including jig and scope Figure 4 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) READ/WRITE CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) -150 Min. Max. -133 Min. Max. -100 Min. Max. Symbol Parameter fmax Clock Frequency -- 150 -- 133 -- 100 MHz tKC Cycle Time 6.7 -- 7.5 -- 10 -- ns tKH Clock High Time 2.5 -- 3 -- 3 -- ns tKL Clock Low Time 2.5 -- 3 -- 3 -- ns tKQ Clock Access Time -- 3.8 -- 4.2 -- 5 ns tKQX(2) Unit Clock High to Output Invalid 1.5 -- 1.5 -- 1.5 -- ns (2,3) Clock High to Output Low-Z 0 -- 0 -- 0 -- ns (2,3) tKQHZ Clock High to Output High-Z -- 3 -- 3.5 -- 3.5 ns tOEQ Output Enable to Output Valid -- 3.8 -- 4.2 -- 5 ns Output Enable to Output Low-Z 0 -- 0 -- 0 -- ns tOEHZ Output Disable to Output High-Z -- 3.5 -- 3.5 -- 3.5 ns tAS Address Setup Time 1.5 -- 1.5 -- 1.5 -- ns tWS Read/Write Setup Time 1.5 -- 1.5 -- 1.5 -- ns tCES Chip Enable Setup Time 1.5 -- 1.5 -- 1.5 -- ns tSE Clock Enable Setup Time 1.5 -- 1.5 -- 1.5 -- ns tAVS Address Advance Setup Time 1.5 -- 1.5 -- 1.5 -- ns tDS Data Setup Time 2.0 -- 2.0 -- 2.0 -- ns tAH Address Hold Time 0.5 -- 0.5 -- 0.5 -- ns tHE Clock EnableHold Time 0.5 -- 0.5 -- 0.5 -- ns tWH Write Hold Time 0.5 -- 0.5 -- 0.5 -- ns tCEH Chip Enable Hold Time 0.5 -- 0.5 -- 0.5 -- ns tADVH Address Advance Hold Time 0.5 -- 0.5 -- 0.5 -- ns tDH Data Hold Time 0.5 -- 0.5 -- 0.5 -- ns tPDS ZZ High to Power Down -- 2 -- 2 -- 2 cyc tPUS ZZ Low to Power Down -- 2 -- 2 -- 2 cyc tKQLZ tOELZ(2,3) (2,3) Notes: 1. Configuration signal MODE is static and must not change during normal operation. 2. Guaranteed but not 100% tested. This parameter is periodically sampled. 3. Tested with load in Figure 2. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 13 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) SLEEP MODE ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Min. ISB2 Current during SLEEP MODE t PDS ZZ active to input ignored 2 cycle t PUS ZZ inactive to input sampled 2 cycle tZZI ZZ active to SLEEP current 2 cycle tRZZI ZZ inactive to exit SLEEP current 0 ns ZZ Vih Max. Unit 10 mA SLEEP MODE TIMING K tPDS ZZ setup cycle tPUS ZZ recovery cycle ZZ tZZI Isupply ISB2 tRZZI All Inputs (except ZZ) Deselect or Read Only Deselect or Read Only Normal operation cycle Outputs (Q) High-Z Don't Care 14 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) READ CYCLE TIMING tKH tKL Clock tKC tADVS tADVH ADV tAS tAH A16 - A0 or A17 - A0 A1 A3 A2 tWS tWH WE tSE tHE CKE tCES tCEH CE OE tOEQ tOEHZ tDS tKQ tKQHZ tOEHZ Data Out Q1-1 Q2-1 Q2-2 Q2-3 NOTES: WE = L and BWX = L CE = L means CE1 = L, CE2 = H and CE2 = L CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 Q2-4 Q3-1 Q3-2 Q3-3 Q3-4 Don't Care Undefined 15 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) WRITE CYCLE TIMING tKH tKL Clock tKC ADV A16 - A0 or A17 - A0 A1 A3 A2 WE tSE tHE CKE CE OE tDS Data In D1-1 D2-1 D2-2 D2-3 D2-4 D3-1 tDH D3-2 D3-3 D3-4 tOEHZ Data Out Q0-3 Q0-4 NOTES: WE = L and BWX = L CE = L means CE1 = L, CE2 = H and CE2 = L CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L 16 Don't Care Undefined Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) SINGLE READ/WRITE CYCLE TIMING tKH tKL Clock tSE tHE tKC CKE Address A1 A2 A3 A4 Q1 Q3 A5 A6 A7 A8 A9 WRITE CS ADV OE tOEQ tOELZ Data Out tDS Data In Q6 Q7 tDH D2 NOTES: WRITE = L means WE = L and BWx = L CS = L means CS1 = L, CS2 = H and CS2 = L CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L and CS2 = L Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 Q4 D5 Don't Care Undefined 17 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) CKE OPERATION TIMING tKH tKL Clock tSE tHE tKC CKE Address A1 A2 A3 A4 A5 A6 WRITE CS ADV OE tKQ tKQHZ tKQLZ Data Out Q1 Q3 Q4 tDS tDH Data In D2 NOTES: WRITE = L means WE = L and BWx = L CS = L means CS1 = L, CS2 = H and CS2 = L CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L and CS2 = L 18 Don't Care Undefined Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ISSI (R) CS OPERATION TIMING tKH tKL Clock tSE tHE tKC CKE Address A1 A2 A3 A4 A5 WRITE CS ADV OE tOEQ tKQHZ tKQ tKQLZ tOELZ Data Out Q1 Q2 Q4 tDS tDH Data In D2 NOTES: WRITE = L means WE = L and BWx = L CS = L means CS1 = L, CS2 = H and CS2 = L CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L and CS2 = L Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 D5 Don't Care Undefined 19 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ORDERING INFORMATION (61NPXXXXX) Commercial Range: 0C to +70C Frequency Order Part Number Package 128Kx32 ISSI Industrial Range: -40C to +85C Frequency Order Part Number Package 133 IS61NP12832-133TQI TQFP IS61NP12832-133BI PBGA 128Kx32 150 IS61NP12832-150TQ TQFP 133 133 IS61NP12832-133TQ TQFP 128Kx36 100 IS61NP12832-100TQ TQFP 133 IS61NP12836-133TQI TQFP 133 IS61NP12836-133BI PBGA 128Kx36 (R) 150 IS61NP12836-150TQ IS61NP12836-150B TQFP PBGA 256Kx18 133 IS61NP12836-133TQ IS61NP12836-133B TQFP PBGA 133 IS61NP25618-133TQI TQFP 133 IS61NP25618-133B2I PBGA 100 IS61NP12836-100TQ TQFP 150 IS61NP25618-150TQ IS61NP25618-150B2 TQFP PBGA 133 IS61NP25618-133TQ IS61NP25618-133B2 TQFP PBGA 100 IS61NP25618-100TQ TQFP 256Kx18 20 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 IS61NP12832 IS61NP12836 IS61NP25618 IS61NLP12832 IS61NLP12836 IS61NLP25618 ORDERING INFORMATION (61NL PXXXXX) Commercial Range: 0C to +70C Frequency Order Part Number Package 128Kx32 133 Industrial Range: -40C to +85C Frequency Order Part Number Package IS61NLP12832-133TQI TQFP 133 IS61NLP12836-133TQI TQFP 133 IS61NLP12836-133BI PBGA 133 IS61NLP25618-133TQI TQFP 133 IS61NLP25618-133B2I PBGA 128Kx32 133 IS61NLP12832-133TQ IS61NLP12832-133B TQFP PBGA 133 IS61NLP12836-133TQ IS61NLP12836-133B TQFP PBGA 150 IS61NLP12836-150TQ IS61NLP12836-150B TQFP PBGA 133 IS61NLP25618-133TQ IS61NLP25618-133B IS61NLP25618-133B2 TQFP PBGA PBGA 150 IS61NLP25618-150TQ IS61NLP25618-150B2 TQFP PBGA 128Kx36 ISSI (R) 128Kx36 256Kx18 256Kx18 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. B 11/21/02 21