4-456
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG45N06, RFP45N06
RF1S45N06SM UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS 60 V
Drain to Gate Voltage (RG = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 45
Refer to Peak Current Curve A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
0.877 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 60 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 µA
VDS = 0.8 x Rated BVDSS, V GS = 0V (125oC) - - 25 µA
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain Source On Resistance (Note 2) rDS(ON) ID = 45A, VGS = 10V (Figure 9) - - 0.028 Ω
Turn-On Time tON VDD = 30V, ID = 45A
RL = 0.667Ω, VGS = +10V
RG = 3.6Ω(Figure 13)
- - 120 ns
Turn-On Delay Time td(ON) -12- ns
Rise Time tr-74- ns
Turn-Off Delay Time td(OFF) -37- ns
Fall Time tf-16- ns
Turn-Off Time tOFF - - 80 ns
Total Gate Charge Qg(TOT) VGS = 0 to 20V VDD = 48V, ID = 45A,
RL = 1.07Ω
Ig(REF) = 1.5mA
(Figure 13)
- 125 150 nC
Gate Charge at 10V Qg(10) VGS = 0 to 10V - 67 80 nC
Threshold Gate Charge Qg(TH) VGS = 0 to 2V - 3.7 4.5 nC
Input Capacitance CISS VDS = 25V, VGS = 0V
f = 1MHz (Figure 12) - 2050 - pF
Output Capacitance COSS - 600 - pF
Reverse Transfer Capacitance CRSS - 200 - pF
Thermal Resistance Junction to Case RθJC - - 1.14 oC/W
Thermal Resistance Junction to Ambient RθJA --80
oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD = 45A - - 1.5 V
Diode Reverse Recovery Time trr ISD = 45A, dISD/dt = 100A/µs - - 125 ns
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFG45N06, RFP45N06, RF1S45N06SM