SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Low on-resistance: Unit: mm Ron = 363m (max) (@VGS = -1.8 V) Ron = 230m (max) (@VGS = -2.5 V) 2.10.1 Ron = 158m (max) (@VGS = -4.0 V) 1.70.1 Drain-Source voltage Rating Unit VDS -20 V V VGSS 8 DC ID -1.8 Pulse IDP -3.6 PD (Note 1) 800 PD (Note 2) 500 Gate-Source voltage Drain current Symbol Drain power dissipation A mW Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C 1 3 2 0.70.05 Characteristic 2.00.1 Absolute Maximum Ratings (Ta = 25C) +0.1 0.3 -0.05 * 0.1660.05 1.8V drive 0.650.05 * 1: Gate 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. 2 (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm ) UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Symbol Test Conditions Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 -20 V (BR) DSX ID = -1 mA, VGS = +8 V -12 -10 A A Drain cut-off current IDSS Gate leakage current IGSS VDS = -20 V, VGS = 0 VGS = 8V, VDS = 0 V 1 -0.3 -1.0 V (Note3) 1.9 3.2 S ID = -0.8 A, VGS = -4.0 V (Note3) 125 158 ID = -0.4 A, VGS = -2.5 V (Note3) 170 230 ID = -0.1 A, VGS = -1.8 V (Note3) Vth VDS = -3 V, ID = -1 mA Forward transfer admittance Yfs VDS = -3 V, ID =- 0.8 A Drain-Source on-resistance RDS (ON) Gate threshold voltage Min m 230 363 Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz 250 pF Output capacitance Coss VDS = -10 V, VGS = 0, f = 1 MHz 45 pF Reverse transfer capacitance Crss VDS = -10 V, VGS = 0, f = 1 MHz 35 pF VDD = -10 V, ID = -0.25 A, VGS = 0 to -2.5 V, RG = 4.7 12 18 ID = 1.8A, VGS = 0 V 0.85 1.2 Switching time Turn-on time ton Turn-off time toff Drain-Source forward voltage VDSF Note3: Pulse test (Note3) ns V Start of commercial production 2005-02 1 2014-03-01 SSM3J108TU Switching Time Test Circuit (a) Test circuit 0 (b) VIN OUT 0V 10% IN RG -2.5V 10 s (c) VOUT VDD VDD = -10 V RG = 4.7 Duty 1% VIN: tr, tf < 5 ns Common Source Ta = 25C Marking 90% -2.5 V RL VDS (ON) 90% 10% VDD tr ton tf toff Equivalent Circuit (top view) 3 3 JJ1 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Take this into consideration when using the device. Handling Precaution When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 SSM3J108TU ID - VDS -5 -10 -4.0 1 Drain Current ID (A) Drain current ID (A) -4 -2.5 -3 -2 -1.8 -1 Ta=85C 0.1 0.01 25C -25C 0.001 -1.5 Common Source VGS=-1.2V Ta=25C -0 Common Source VDS=-3V 0.0001 -0.0 -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS (V) -1.0 0 RDS(ON) - VGS 300 Common Source Ta=25C 250 200 -0.4A ID=-0.1A 100 50 Common Source 300 -1.8V,-0.1A 250 200 -2.5V,-0.4A 150 VGS=-4V,ID=-0.8A 100 50 0 0 -0 -1 -2 -3 -4 -5 -6 -7 -8 Gate-Source voltage VGS (V) -9 -10 -60 -40 -20 0 Vth - Ta -1 Common Source ID=-1mA VDS=-3V Gate threshold voltage Vth(V) 350 300 -1.8V 250 200 -2.5V 150 VGS=-4V 100 Common Source Ta=25C 50 -0.8 -0.6 -0.4 -0.2 -0 0 -60 -40 -20 0 -0 -1 -2 -3 -4 20 40 60 80 100 120 140 160 Ambient temperature Ta() RDS(ON) - ID 400 Drain-Source on-resistance RDS(ON) (m) 2 RDS(ON) - Ta 350 -0.8A 150 1 Gate-Source voltage VGS (V) 400 Drain-Source on-resistance RDS(ON) (m) Drain-Source on-resistance RDS(ON) (m) ID - VGS 10 20 40 60 80 100 120 140 160 -5 Ambient temperature Ta(C) Drain current ID (A) 3 2014-03-01 SSM3J108TU |Yfs| - ID Drain reverse current IDR (A) |Yfs| (S) -25C Ta=85C 1.0 IDR - VDS -10 25C Common Source VDS=-3V Ta=25C 0.1 Common Source VGS=0V Ta=25C -1 25C Ta=85C -0.01 -0.1 -1 -10 0 0.2 0.4 0.6 0.8 Drain-Source voltage VDS (V) Drain current ID (A) C - VDS 1000 Ciss 100 Common Source VGS=0V f=1MHz Ta=25C Coss 1 10 toff tf 10 ton tr 1 -0.01 100 -0.1 -1 Drain current ID (A) Drain-Source voltage VDS (V) 1000 a: mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm b:mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm Transient thermal impedance Rth(C/W) b 800 600 a 400 200 0 0 20 -10 Rth - tw PD - Ta 1000 Common Source VDD=10V VGS=0 to 2.5V Ta=25C 100 Crss 10 0.1 1 t - ID 1000 Switching time t (ns) Capacitance C (pF) -25C -0.1 -0.001 -0.01 Drain power dissipation PD(mW) Forward transfer admittance 10.0 c 4 Single pulse a:Mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm b:Mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm c:Mounted on FR4 Board (25.4mmx25.4mmx1.6mm) Cu Pad :0.45mmx0.8mmx3 10 1 0.001 40 60 80 100 120 140 160 Ambient temperature Ta(C) b a 100 0.01 0.1 1 10 Pulse w idth tw (S) 100 1000 2014-03-01 SSM3J108TU RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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