Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Shottky barrier diode
RB548W
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low current rectification
Features
1) Ultra small power mold type. (EMD3)
2) Low IR
3) High reliability.
Construction Structure
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRV
Io mA
IFSM mA
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 0.45 V IF=10mA
IR- - 0.5 μAVR=10V
Reverse current
Conditions
(*1) Rating of per diode
Parameter
Forward voltage
Junction temperature 125
Storage temperature 40 to 125
Average rectified forward current (*1) 100
Forward current surge peak (60Hz・1cyc) (*1) 500
Parameter Limits
Reverse voltage (DC) 30
EMD3
1.0
0.7
0.5
0.5
0.7
0.7
0.6 0.6
1.3
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory)
(3)
1.6±0.2
1.6±0.2
1.0±0.1
0.8±0.1
0.5 0.5
(2) (1)
0.15±0.05
0.7±0.1
0.55±0.1
0.1Min
0～0.1
0.2±0.1
-0.05
0.3±0.1
0.05
4.0±0.1 2.0±0.05 φ1.55±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.5±0.1
1.8±0.2
0.3±0.1
1.8±0.1
5.5±0.2
0.9±0.2
0～0.1
φ1.5 0.1
0
1/3 2011.04 - Rev.C
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Data Sheet
RB548W
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
1
10
100
1000
10000
100000
1000000
0102030
1
10
100
0 5 10 15 20
f=1MHｚ
320
330
340
350
360
370
Ta=25℃
IF=10mA
n=30pcs
0
100
200
300
400
500
600
700
800
900
1000
AVE:100.5nA
Ta=25℃
VR=10V
n=30pcs
10
11
12
13
14
15
16
17
18
19
20
AVE:15.94pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
AVE:3.90A
8.3ms
Ifsm 1cyc
0
5
10
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
1 10 100
t
Ifsm
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
0
0.02
0.04
0.06
0.08
0.1
0 0.05 0.1 0.15 0.2
0
0.005
0.01
0.015
0.02
0 5 10 15 20 25 30
AVE:338.8mV
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
DC
D=1/2
Sin(θ＝180)
Sin(θ＝180)
DC
D=1/2
2/3 2011.04 - Rev.C
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB548W
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.1
0.2
0.3
0 25 50 75 100 125
Per diode
Sin(θ＝180)
D=1/2
DC
0
0.1
0.2
0.3
0 25 50 75 100 125
Per diode
Sin(θ＝180)
D=1/2
DC
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
3/3 2011.04 - Rev.C
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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