Bulletin I2405 rev. A 07/00 10RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features 10A Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1200V V DRM / V RRM Typical Applications Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters 10RIA Unit 10 A @ TC 85 C 25 A @ 50Hz 225 A @ 60Hz 240 A @ 50Hz 255 A2 s @ 60Hz 233 A2 s 100 to 1200 V 110 s - 65 to 125 C IT(AV) IT(RMS) ITSM 2 I t VDRM/VRRM tq typical TJ www.irf.com Case Style TO-208AA (TO-48) 1 10RIA Series Bulletin I2405 rev. A 07/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage (1) V repetitive peak voltage (2) V @ TJ = TJ max. 10 100 150 20 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 Type number 10RIA mA 10 (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms On-state Conduction Parameter I T(AV) 10RIA Units Conditions Max. average on-state current 10 A @ Case temperature 85 C I T(RMS) Max. RMS on-state current 25 A I TSM Max. peak, one-cycle 225 t = 10ms No voltage non-repetitive surge current 240 t = 8.3ms reapplied t = 10ms 100% VRRM 190 I 2t Maximum I2t for fusing A 200 t = 8.3ms reapplied Sinusoidal half wave, 255 t = 10ms No voltage Initial TJ = TJ max. 233 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied A2 s 180 165 I 2t Maximum I2t for fusing V T(TO)1 Low level value of threshold 2550 A2 s 1.39 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. 1.10 voltage V T(TO) 2 High level value of threshold 180 conduction, half sine wave V (I > x IT(AV)), TJ = TJ max. voltage r t1 Low level value of on-state r t2 High level value of on-state (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. 24.3 slope resistance 16.7 m (I > x IT(AV)), TJ = TJ max. slope resistance V TM Max. on-state voltage 1.75 IH Maximum holding current 130 IL Typical latching current 200 2 V mA Ipk= 32A, TJ = 25C tp = 10ms sine pulse T J = 25C, anode supply 12V resistive load www.irf.com 10RIA Series Bulletin I2405 rev. A 07/00 Switching Parameter di/dt 10RIA Units Conditions VDRM 600V 200 A/s Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. Max. rate of rise of turned-on current TJ = TJ max., VDM = rated VDRM VDRM 800V 180 VDRM 1000V 160 VDRM 1600V 150 tgt Typical turn-on time trr Typical reverse recovery time tq Typical turn-off time ITM = (2x rated di/dt) A 0.9 TJ = 25C, at = rated VDRM/VRRM, TJ = 125C 4 s TJ = TJ max., ITM = IT(AV), tp > 200s, di/dt = -10A/s 110 TJ = TJ max., ITM = IT(AV), tp > 200s, VR = 100V, di/dt = -10A/s, dv/dt = 20V/s linear to 67% VDRM, gate bias 0V-100W (*) tq = 10sup to 600V, tq = 30s up to 1600V available on special request. Blocking Parameter dv/dt Max. critical rate of rise of off-state voltage 10RIA 100 300 (*) Units Conditions V/s TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (**) Available with: dv/dt = 1000V/s, to complete code add S90 i.e. 10RIA120S90. Triggering Parameter PGM Maximum peak gate power 10RIA Units Conditions 8.0 W TJ = TJ max. PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 1.5 A TJ = TJ max. -VGM Maximum peak negative 10 V TJ = TJ max. IGT DC gate current required 90 to trigger 60 35 TJ = 125C DC gate voltage required 3.0 TJ = - 65C to trigger 2.0 V TJ = 25C 1.0 V TJ = 125C gate voltage VGT TJ = - 65C mA IGD DC gate current not to trigger 2.0 mA VGD DC gate voltage not to trigger 0.2 V TJ = 25C Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value www.irf.com Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 10RIA Series Bulletin I2405 rev. A 07/00 Thermal and Mechanical Specification Parameter 10RIA Units Conditions TJ Max. operating temperature range - 65 to 125 C Tstg Max. storage temperature range - 65 to 125 C 1.85 K/W DC operation 0.35 K/W Mounting surface, smooth, flat and greased RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque wt to nut to device 20(27.5) 25 lbf-in Lubricated threads 0.23(0.32) 0.29 kgf.m (Non-lubricated threads) 2.3(3.1) 2.8 Nm Approximate weight 14 (0.49) Case style TO-208AA (TO-48) g (oz) See Outline Table RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180 0.44 0.32 120 0.53 0.56 90 0.68 0.75 60 1.01 1.05 30 1.71 1.73 K/W Conditions TJ = TJ max. Ordering Information Table Device Code 10 RIA 120 2 1 S90 4 5 1 - Current code 2 - Essential part number 3 - Voltage code: Code x 10 = VRRM (See Voltage Rating Table) 4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M 5 - = Stud base TO-208AA (TO-48) M6 X 1 Critical dv/dt: None = 300V/s (Standard value) S90 4 3 M = 1000V/s (Special selection) www.irf.com 10RIA Series Bulletin I2405 rev. A 07/00 Outline Table Case Style TO-208AA (TO-48) 130 10RIA Series RthJC (DC) = 1.85 K/W 120 110 100 90 Conduction Angle 80 30 60 70 90 60 120 180 50 40 0 2 4 6 8 10 12 14 16 18 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) All dimensions in millimeters (inches) 130 10RIA Series RthJC (DC) = 1.85 K/W 120 110 100 90 Conduction Period 30 80 60 70 90 120 180 60 50 40 DC 0 5 10 15 20 25 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic www.irf.com 30 5 10RIA Series 35 5K /W 7K /W Conduction Angle 10 10RIA Series TJ = 125C 5 2 4 6 8 10 K /W 0 10 12 14 16 18 Average On-state Current (A) R 4K /W RMS Limit 0 ta el -D 3K /W 15 0 W K/ 20 K/ W 1 25 2 = 180 120 90 60 30 30 SA R th Maximum Average On-state Power Loss (W) Bulletin I2405 rev. A 07/00 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) 45 DC 180 120 90 60 30 40 35 30 R SA th Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 25 20 RMS Limit Conduction Period 10 10RIA Series TJ = 125C 5 0 5 1 K/ W 3K /W 4K /W 15 0 = 2K /W 10 15 20 25 Average On-state Current (A) -D elt a R 5K /W 7 K/W 10 K/W 30 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 190 180 170 160 150 140 130 120 110 10RIA Series 100 90 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 6 240 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V RRMReapplied 220 200 180 160 140 120 100 10RIA Series 80 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 10RIA Series Insta ntaneo us O n-state C urrent (A ) Bulletin I2405 rev. A 07/00 1 0 00 10 0 T J = 25 C T J = 12 5 C 10 10RIA Series 1 0.5 1 1.5 2 2.5 3 3 .5 4 Instanta n eous O n-sta te Vo lta ge (V) Transient Thermal Impedance ZthJC (K/W) Fig. 7 - Forward Voltage Drop Characteristics 10 Steady State Value R thJC = 1.85 K/W (DC Operation) 1 10RIA Series 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 s, tp >= 6 s b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 s, tp >= 6 s (1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 1ms (a) (b) VGD 0.1 0.001 Tj = -65 C Tj = 125 C 1 Tj = 25 C Instantaneous Gate Voltage (V) 100 (1) IGD (2) (3) (4) 10RIA Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 7 10RIA Series Bulletin I2405 rev. A 07/00 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com 8 Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. www.irf.com