DATA SH EET
Product specification 1998 Feb 23
INTEGRATED CIRCUITS
TDA7056AT
3 W mono BTL audio amplifier with
DC volume control
1998 Feb 23 2
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
FEATURES
DC volume control
Few external components
Mute mode
Thermal protectio n
Short-circuit proof
No switch-on or switch-off clicks
Good overall stab ility
Low power cons umption
Low HF radiation
ESD protected on all pins.
GENERAL DESCRIPTION
The TDA7056AT is a mono Bridge-Tied Load (BTL) output
amplifier with DC volume control. It is designed for use in
TVs and monitors, but is als o su itable for battery-fe d
portable recorders and radios. The device is contained in
a 20-lead small outlin e pa ckage.
A Missing Current Limiter (MCL) is built in. The MCL circuit
is activated when the difference in current between the
output terminal of each amplifier exceeds 100 mA
(300 mA typ.). This level of 100 mA allows for
Single-Ended (SE) headphone applications.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VPsupply vo ltage 4.5 18 V
Pooutput power VP=12V; R
L=16Ω33.5W
Gv(max) maximum total voltage gain VP=12V; R
L=16Ω34.5 35.5 36.5 dB
ΔGvvoltage gain control range 75 80 dB
Iq(tot) total quiescent current VP=12V; R
L=∞− 816mA
THD tot al ha rmo n i c distortion Po=0.5W 0.3 1 %
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA7056AT SO20 plastic small outline package with 20 leads; body width 7.5 mm SOT163-1
1998 Feb 23 3
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
positive input
15
MGM576
4
5
TDA7056AT
7
14
I + i
17I i
STABILIZER TEMPERATURE
PROTECTION
6
DC volume control
Vref
+
+
+
positive output
negative output
power
ground
signal
ground
VP
1 to 3, 8 to 13,
16, 18 to 20
n.c.
1998 Feb 23 4
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
PINNING
SYMBOL PIN DESCRIPTION
n.c. 1 not connected
n.c. 2 not connected
n.c. 3 not connected
VP4 positive supply voltage
VI5 p ositive input
GND1 6 signal ground
VC 7 DC volume control
n.c. 8 not connected
n.c. 9 not connected
n.c. 10 not connected
n.c. 11 not connected
n.c. 12 not connected
n.c. 13 not connected
OUT+ 14 positive output
GND2 15 power ground
n.c. 16 not connected
OUT17 negative output
n.c. 18 not connected
n.c. 19 not connected
n.c. 20 not connected Fig.2 Pin configuration.
handbook, halfpage
n.c.
n.c.
n.c.
VP
VI
GND1
VC
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
OUT
GND2
OUT+
n.c.
n.c.
n.c.
n.c.
1
2
3
4
5
6
7
8
9
10 11
12
20
19
18
17
16
15
14
13
TDA7056AT
MGM577
1998 Feb 23 5
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
FUNCTIONAL DESCRIPTION
The TDA7056AT is a mono BTL output amplifier with DC
volume control. It is designed for use in TVs and monitors
but is also suitable for battery-fed portable recorders and
radios.
In conventional DC volume circuits the control or input
stage is AC-coupled to the output stage via external
capacitors to keep the offset voltage low. In the
TDA7056AT the DC volume control stage is integrated into
the input stage so that no coupling capacitors are required.
With this configuration, a low offset voltage is still
maintained and the minimum supply voltage remains low.
The BTL principle offer s the follo wing advantages:
Lower peak value of the supply current
The frequency of the ripple on the supply voltage is twice
the signal frequency.
Consequently, a re duced power supply with smaller
capacitors can be used which also results in cost
reductions. For po rtable applica tions there is a trend to
decrease the supply voltage, resulting in a reduction of
output power at conventional output stages. Using the BTL
principle increas es the output power.
The maximum gain of the amplifier is fixed at 35.5 dB.
The DC volume control stage has a logarithmic control
characteristic.
The total gain can be controlled from +35.5 to 44 dB.
If the DC volume control voltage is below 0.3 V, the device
switches to the mute mode.
The amplifier is short-circuit proof to ground, VP and
across the load. A thermal protection circuit is also
implemented. If the crystal temper ature rises above
+150 °C the gain will be reduced, thereby reducing the
output power. Special attention is give n to s witch -on and
switch-off clicks, low HF radiation and a good overall
stability.
Power dissipation
Assume VP=12V; R
L=16Ω.
The maximum sine wave dissipation is 1.8 W.
The Rth vj-a of the package is 60 K/W.
Therefore Tamb(max) =15060 ×1.8 = 42 °C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTE RISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VPsupply voltage 18 V
V5, 7 input voltage pins 5 and 7 5V
IORM repetitive peak output current 1.25 A
IOSM non-repetitive peak output current 1.5 A
Ptot total power dissipation Tcase <60 °C1.5 W
Tamb operating ambient temperature 40 +85 °C
Tstg storage temperature 55 +150 °C
Tvj virtual junction temperature 150 °C
tsc short-circuit time 1h
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air 60 K/W
1998 Feb 23 6
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
CHARACTERISTICS
VP=12V; V
DC = 1 .4 V; f = 1 kHz; RL=16Ω; Tamb =25°C; unless otherwise spec ified (s ee Fig.14).
Notes
1. With a load connected to the outputs the quiescent current will increase, the maximum value of this increase being
equal to the DC output offset voltage divided by RL.
2. The noise output voltage (Vn(o)(rms)) at f = 500 kHz, is measured with Rs=0Ω an d B = 5 kHz.
3. The ripple rejection is measured with Rs=0Ω and f = 100 Hz to 10 kHz. The ripple voltage (Vripple =200mVRMS)
is applied to the positive su pply rail.
4. The noise output voltage (Vn(o)(rms)) is measured with Rs=5kΩ unweighted.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VPsupply voltage 4.5 18 V
Iq(tot) total quiescent current RL=; note 1 816mA
Maximum gain (V7=1.4V)
Pooutput power THD = 10%; RL=16Ω33.5 W
THD total harmonic distortion Po=0.5W 0.3 1 %
Gv(max) maximum total voltage gain 34.5 35.5 36.5 dB
Vi(rms) input signal handling (RMS va lue) VVC =0.8V; THD<1% 0.5 0.65 V
Vn(o)(rms) noise output voltage (RMS value) f = 500 kHz; note 2 210 −μV
B bandwidth at 1dB 0.02 to 300 kHz
SVRR supply voltage ripple rejection note 3 38 46 dB
⎪ΔVOSDC output offset voltage V17 v14⎪−0 150 mV
Ziinput impedance (pin 3) 15 20 25 kΩ
Minimum gain (V7=0.5V)
Gvvoltage gain −−44 dB
Vo(n)(rms) noise output voltage (RMS value) note 4 20 30 μV
Mute position
Vo(mute) output voltage in mute position VVC 0.3 V;
VI= 600 mV; note 4 35 45 μV
DC volume control
ΔGvvoltage gain control range 75 80 dB
IVC control current VVC =0V 60 70 80 μA
1998 Feb 23 7
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
Fig.3 Quiescent curre nt as a function of the
supply voltage.
V5=1.4V; no load.
handbook, halfpage
20
0
4
MGM578
8
12
16
04 2081216
Iq
(mA)
VP (V)
Fig.4 THD as a functio n of ou tput power.
VDC =1.4V.
(1) VP=12V; R
L=16Ω.
handbook, halfpage
12
0
MGM579
Po (W)
THD
(%)
101110
2
4
6
10
8
(1)
Fig.5 THD as a function of frequency.
VP=12V, P
o= 0.5 W, VDC =1.4V.
(1) RL=16Ω.
handbook, halfpage
0
2
4
6
8
MGM580
10 10
2
10
3
10
4
10
5
f (Hz)
THD
(%)
(1)
Fig.6 Ripple rejec tio n as a function of frequency.
VP=12V; R
L=16Ω; Vr=200mV.
(1) V7=0.3V; R
s=5kΩ.
(2) V7=1.4V; R
s=0Ω.
(3) V7=1.4V; R
s=5kΩ.
handbook, halfpage
0
100
20
40
60
80
MGM581
10 10
2
10
3
10
4
10
5
f (Hz)
RR
(dB)
(2)
(3)
(1)
1998 Feb 23 8
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
Fig.7 Gain control as a function of DC volume
control.
handbook, halfpage
MGM582
40
80
20
20
40
0
0 1.2 2.00.4 1.60.8 V7 (V)
gain
(dB)
60
Fig.8 Noise output voltage as a function of DC
volume control.
Measured with Rs=5kΩ unweighted; f = 22 Hz to 22 kHz.
handbook, halfpage
1000
0
800
400
200
600
0 1.2 2.0
MGM583
0.4 1.60.8
Vn
(μV)
V7 (V)
Fig.9 Input signal handlin g as a function of the
supply voltage.
Tamb =25°C; THD = 1%; RL=16Ω; VDC =0.8V.
handbook, halfpage
1000
0
200
MGM584
400
600
800
04 2081216
Vi
(mV)
VP (V)
Fig.10 Output power as a function of the supply
voltage.
Measured at THD = 10%. The maximum output power is limited by
the maximum power dissipation an d the maximum available output
current.
(1) RL=8Ω.
(2) RL=16Ω.
(3) RL=25Ω.
handbook, halfpage
5
0
1
MGM585
2
3
4
04 2081216
Po
(W)
VP (V)
(1) (2) (3)
1998 Feb 23 9
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
Fig.11 Total worst case power dissipation as a
function of supply voltage.
(1) RL=8Ω.
(2) RL=16Ω.
(3) RL=25Ω.
handbook, halfpage
0
3
2
1
0420
MGM586
81216
P
(W)
VP (V)
(1) (3)(2)
Fig.12 Control current as a function of DC volume
control.
handbook, halfpage
0 1.2 2.0
100
20
MGM587
60
20
60
100 0.4 1.60.8 V7 (V)
I5
(μA)
1998 Feb 23 10
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
Fig.13 Printed-circu it bo ard layout.
handbook, full pagewidth
MGM591
+VP
OUT
volume
+OUT
1
20
TDA7056A/BT
5 kΩ
220 μF
0.47 μF
100 nF
100
nF
IN
GND
D&A AUDIO POWER
CIC NIJMEGEN
b. Top view of component s i de.
a. Top view of bottom copper.
1998 Feb 23 11
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
TEST AND APPLICATION INFO RMATION
Test conditions
Tamb =25°C if not specified: VP=12V; V
DC =1.4V;
f=1kHz; R
L=16Ω; audio bandpass: 22 Hz to 22 kHz.
In Figures 5 and 6 a low-pass filter of 80 kHz was applied.
It should be noted that capacitive loads (100 pF and 5 nF)
connected between the output pins to a co mmon ground
can cause oscillations. The BTL application circuit diagram
is shown in Fig.14. To avoid instabilities and too high
distortion, the input and power ground traces must be
separated as far as possible and connected together as
close as possible to the IC. The quiescent current has
been measured w i thout load impeda nce.
Voltage gain
The maximum closed-loop voltage gain has been
internally fixed at 35.5 dB. The input sensitivity at
maximum gain for Po=3W (R
L=16Ω) is 115 mV.
The gain bandwidth is 20 Hz to 300 kHz within 1 dB.
Output power
The output power as a function of supply voltage has been
measured at THD = 10%. The maximum output powe r is
limited by the maximum allowe d power dissipation at
Tamb =25°C app rox imately 2 W, and the maximum
available output current is 1.25 A repetitive peak current.
Switch-on/switch-off
The switch-on behaviour depends on the following:
The rise time of the power su pply (if tr>40ms for
VP= 0 to 12 V then the switch-on behaviour will be
good)
The input capacitor and source impedance (a hi gher
source impedance and/or lower input capacitor value
will have a positive influence on the switch-on/switch-off
behaviour)
The DC volume control pin (a capacitor of >0.1 μF
avoids disturbances).
Thermal behaviour:
The measured thermal resistance of the IC package is
highly depende nt on the configuration and size of the
application board. Data may not be comparable between
different semiconductors manufacturers because the
application boards and tes t methods are not (yet)
standardized. The thermal performance of packages for a
specific application may also be differ ent than presented
here, because the configuration of the application boa rds
(copper area) may be different. NXP Semiconductors uses
FR-4 type application boards with 1 oz copper traces with
solder coating . The measur ements ha ve been carr ied out
with vertical placed bo ar ds.
Using a practical PCB layout with wider copper tracks and
some copper area to the IC pins and just under the IC, the
thermal resistance from junction to ambient can be
reduced. In the demonstration application PCB the
Rth(j-a) = 56 K/W for the SO20 plastic package. For a
maximum ambient temperature of Tamb =50°C the
following calculation can be made for the maximum power
dissipation:
For the application at VP= 12 V and RL=16Ω the worst
case sine wave di ssipation is 1.85 W. Because in pr actice
the ‘music-power’ causes about the half of the s ine wave
dissipation, this application (VP=12V; R
L=16Ω) has
been allowed.
Short-circuit protection:
The output pins (pins 14 and 17) can be short-circuited to
ground respec tive ly to +V P. The Missing Current Limiter
(MCL) protection circuit will shut-off the amplifier.
Removing the short-circuit will reset the amplifier
automatically. Short-circuit across the load
(pins 14 and 17) will activate the thermal protection circuit;
this will result in reducing the short-circuit current.
150 K/W 50 K/W()
56 K/W
----------------------------------------------------- 1.79 W=
1998 Feb 23 12
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
For single-end application the output peak current may not exceed 100 mA; at highe r output currents the short circuit
protection (MLC) will be activated.
Fig.14 Test and applicatio n diagram.
To avoid instabilities and too high distortion, the input- and power ground must be separated as long as possible and connected together as close as
possibl e to the IC.
(1) This capacitor can be omitted if the 220 μF elect r olytic capacitor is connected close to pin 2.
handbook, full pagewidth
positive input
MGM588
5
kΩ
0.47 μF
100 nF 220 μF
RL = 16 Ω
(1)
ground
DC
volume
control
Rs
VP
15
4
5
TDA7056AT
7
14
I + i
17I i
STABILIZER TEMPERATURE
PROTECTION
6
Vref
+
+
+
1 to 3, 8 to 13,
16, 18 to 20
n.c.
1998 Feb 23 13
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
Fig.15 Application with potentiometer as volume
control; maximum gain = 30 dB.
handbook, halfpage
MGM589
7
100 kΩ
1 μF
GND
volume
control TDA7056AT
Fig.16 Application with potentiometer as volume
control; maximum gain = 36 dB.
handbook, halfpage
MGM590
7
TDA7056AT
22 kΩ
82 kΩ
1 μF
GND
VP = 12 V
volume
control
1998 Feb 23 14
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
PACKAGE OUTLINE
UNIT A
max. A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZ
ywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
2.65 0.3
0.1 2.45
2.25 0.49
0.36 0.32
0.23 13.0
12.6 7.6
7.4 1.27 10.65
10.00 1.1
1.0 0.9
0.4 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
1.1
0.4
SOT163-1
10
20
wM
bp
detail X
Z
e
11
1
D
y
0.25
075E04 MS-013
pin 1 index
0.1 0.012
0.004 0.096
0.089 0.019
0.014 0.013
0.009 0.51
0.49 0.30
0.29 0.05
1.4
0.055
0.419
0.394 0.043
0.039 0.035
0.016
0.01
0.25
0.01 0.004
0.043
0.016
0.01
0 5 10 mm
scale
X
θ
A
A1
A2
HE
Lp
Q
E
c
L
vMA
(A )
3
A
S
O20: plastic small outline package; 20 leads; body width 7.5 mm SOT163
-1
99-12-27
03-02-19
1998 Feb 23 15
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth acco un t of sold er ing ICs can be found in
our “IC Package Databook” (order cod e 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-s yringe dispensing before packag e plac ement.
Several techniques ex is t for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending o n heating
method. Typical reflow temperatures range from
215to250°C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observ ed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
techniqu e sh ould be used.
The longitudinal ax is of the package footprint must be
parallel to the solder flow.
The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adh esive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temp erature is 260 °C, and
maximum duration of pack age immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first so ldering two diagonally-
opposite end leads. Use only a low voltage solder ing iron
(less than 24 V) applied to th e flat part of the lead. Con tact
time must be limit ed to 10 seconds at up t o 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operatio n wi th in 2 to 5 seconds bet we en
270 and 320 °C.
1998 Feb 23 16
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document b efore initiating or completing a design.
2. The product status of device (s) described in this document may have ch anged since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective s pe cification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet P roduction This docume nt contains the product specification.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, busin es s interru ption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cu mulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditio ns of comme rcial
sale of NXP Semiconductors.
Right to make changes NXP Semiconductors
reserves the right to make changes to informa tion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereo f.
Suitability for use NXP Semiconduct ors pr oduc ts are
not designed, au thorized or warran ted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductor s pr oducts in such equi pme nt or
application s and therefor e such inclusion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors pro du ct is su itable and fit for the
customer’s applications and products planned, as well as
for the planned a pplication and use of customer’s third
party customer(s). Customers should provide appropriate
design and opera t ing saf eg ua rd s to minimize the risks
associated with their applications and products.
NXP Semiconduc tors does n ot a ccept any liabil ity rela ted
to any default, damage, costs or problem which is based
on any weakne ss or default in t he customer’s applic ations
or products, or the application or use by customer’s third
party customer( s) . C us to m er is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applic ations and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
1998 Feb 23 17
NXP Semiconductors Product specification
3 W mono BTL audio amplifier with DC
volume control TDA7056AT
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions abo ve those given in th e Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the qua l ity and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditio ns of commercial sale, as published at
http://www.nxp.com/profile/terms, unless other wise
agreed in a valid written ind i vidual agreement. In case an
individual agreeme nt is co nc luded only the terms and
conditions of the resp ective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semicon ductors products by customer.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control This document as well as the item(s)
described he re in may be subject to export control
regulations. Export might require a prior authorization from
national auth or itie s.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is au tomotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor te sted in accordanc e with automot ive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified prod ucts in automotive eq uip m en t or
applications.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such au t omo tive application s, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own ris k, and (c) customer fully inde m nifies
NXP Semiconductors for any liability, damages or failed
product clai ms r esult ing fr om custo mer desi gn an d us e o f
the product for automotive ap plic ations beyond NXP
Semiconductors st andard warranty and NXP
Semiconductors’ product specifications.
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form par t o f an y q uotation or contra ct, is believed to be accur ate a nd re li a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual pr operty rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 545102/25/01/pp18 Date of releas e : 1998 Feb 23 Document order number: 9397 750 03253