CD4085BMS - Harris Semiconductor - Datasheet.Directory

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.

SEMICONDUCTOR

CD4085BMS

CMOS Dual 2 Wide 2 Input

AND-OR-INVERT Gate

Features

• High Voltage Type (20V Rating)

• Medium Speed Operation

- tPHL = 90ns

- tPLH = 125ns (Typ.) at 10V

• Individual Inhibit Controls

• 5V, 10V and 15V Parametric Ratings

• Standardized Symmetrical Output Characteristics

• 100% Tested for Quiescent Current at 20V

• Maximum Input Current of 1µA at 18V Over Full Pack-

age Temperature Range; 100nA at 18V and +25oC

• Noise Margin (Over Full Package/Temperature Range)

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• Meets All Requirements of JEDEC Tentative Standard

No. 13B, “Standard Speciﬁcations for Description of

‘B’ Series CMOS Devices”

Description

CD4085BMS contains a pair of AND-OR-INVERT gates, each

consisting of two 2 input AND gates driving a 3 input NOR gate.

Individual inhibit controls are provided for both A-O-I gates..

The CD4085BMS is supplied in these 14 lead outline pack-

ages:

Braze Seal DIP H4H

Frit Seal DIP H1B

Ceramic Flatpack H5W

December 1992

File Number 3327

Pinout

CD4085BMS

TOP VIEW

Functional Diagram

E1 = INHI + A1B1 + C1D1

E2 = INH2 + A2B2 + C2D2

VSS

VDD

INHIBIT 2

INHIBIT 1

VDD = 14

VSS = 7

INHIBIT 1

3E1

INHIBIT 2

4E2

E = INHIBIT + AB + CD

LOGIC 1 = HIGH

LOGIC 0 = LOW

7-1047

Speciﬁcations CD4085BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

Thermal Resistance . . . . . . . . . . . . . . . . θja θjc

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K). . . . . . 500mW

For TA = +100oC to +125oC (Package Type D, F, K) . . . . .Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1) GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-2µA

2 +125oC - 200 µA

VDD = 18V, VIN = VDD or GND 3 -55oC-2µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

2 +125oC -1000 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

2 +125oC - 1000 nA

VDD = 18V 3 -55oC - 100 nA

Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV

Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA

Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA

N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V

P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V

Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD/2 VOL <

VDD/2 V

VDD = 20V, VIN = VDD or GND 7 +25oC

VDD = 18V, VIN = VDD or GND 8A +125oC

VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low

(Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25 oC, +125oC, -55oC - 1.5 V

Input Voltage High

(Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25 oC, +125oC, -55oC 3.5 - V

Input Voltage Low

(Note 2) VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC- 4 V

Input Voltage High

(Note 2) VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC11 - V

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

3. For accuracy, voltage is measured differentially to VDD. Limit

is 0.050V max.

7-1048

Speciﬁcations CD4085BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTES 1, 2) GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

Propagation Delay

Data TPHL1 VDD = 5V, VIN = VDD or GND 9 +25oC - 450 ns

10, 11 +125oC, -55oC - 608 ns

Propagation Delay

Data TPLH1 VDD = 5V, VIN = VDD or GND 9 +25oC - 620 ns

10, 11 +125oC, -55oC - 837 ns

Propagation Delay

Inhibit TPHL2 VDD = 5V, VIN = VDD or GND 9 +25oC - 300 ns

10, 11 +125oC, -55oC - 405 ns

Propagation Delay

Inhibit TPLH2 VDD = 5V, VIN = VDD or GND 9 +25oC - 500 ns

10, 11 +125oC, -55oC - 675 ns

Transition Time TTHL

TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

10, 11 +125oC, -55oC - 270 ns

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

UNITSMIN MAX

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA

+125oC-30µA

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

+125oC-60µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

+125oC - 120 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC-50mV

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC-50mV

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC4.95 - V

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC9.95 - V

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

-55oC 0.64 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

-55oC 1.6 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

-55oC 4.2 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

-55oC - -0.64 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

-55oC - -2.0 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

-55oC - -2.6 mA

7-1049

Speciﬁcations CD4085BMS

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

-55oC - -4.2 mA

Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25 oC, +125oC,

-55oC-3V

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25 oC, +125oC,

-55oC+7 - V

Propagation Delay Data TPHL1 VDD = 10V 1, 2, 3 +25oC - 180 ns

VDD = 15V 1, 2, 3 +25oC - 130 ns

Propagation Delay Data TPLH1 VDD = 10V 1, 2, 3 +25oC - 250 ns

VDD = 15V 1, 2, 3 +25oC - 180 ns

Propagation Delay

Inhibit TPHL2 VDD = 10V 1, 2, 3 +25oC - 120 ns

VDD = 15V 1, 2, 3 +25oC - 80 ns

Propagation Delay

Inhibit TPLH2 VDD = 10V 1, 2, 3 +25oC - 200 ns

VDD = 15V 1, 2, 3 +25oC - 140 ns

Transition Time TTHL

TTLH VDD = 10V 1, 2, 3 +25oC - 100 ns

VDD = 15V 1, 2, 3 +25oC - 80 ns

Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized

on initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

UNITSMIN MAX

Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 7.5 µA

N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V

N Threshold Voltage

Delta ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V

P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V

P Threshold Voltage

Delta ∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V

Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >

VDD/2 VOL <

VDD/2 V

VDD = 3V, VIN = VDD or GND

Propagation Delay Time TPHL

TPLH VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x

+25oC

Limit

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit.

4. Read and Record

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC

PARAMETER SYMBOL DELTA LIMIT

Supply Current - MSI-1 IDD ± 0.2µA

Output Current (Sink) IOL5 ± 20% x Pre-Test Reading

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

UNITSMIN MAX

7-1050

Speciﬁcations CD4085BMS

Output Current (Source) IOH5A ± 20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

CONFORMANCE GROUP MIL-STD-883

METHOD GROUP A SUBGROUPS READ AND RECORD

Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

Final Test 100% 5004 2, 3, 8A, 8B, 10, 11

Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11

Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11

Subgroup B-6 Sample 5005 1, 7, 9

Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3

NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

TABLE 7. TOTAL DOSE IRRADIATION

CONFORMANCE GROUPS MIL-STD-883

METHOD

TEST READ AND RECORD

PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD

Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

FUNCTION OPEN GROUND VDD 9V ± -0.5V

OSCILLATOR

50kHz 25kHz

Static Burn-In 1

Note 1 3, 4 1, 2, 5-13 14

Static Burn-In 2

Note 1 3, 4 7 1, 2, 5, 6, 8-14

Dynamic Burn-

In Note 1 - 7 14 3, 4 1, 2, 5, 6, 8, 9,

12, 13 10, 11

Irradiation

Note 2 3, 4 7 1, 2, 5, 6, 8-14

NOTE:

1. Each pin except VDD and GND will have a series resistor of 10K± 5%, VDD = 18V ± 0.5V

2. Each pin except VDD and GND will have a series resistor of 47K±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,

VDD = 10V ± 0.5V

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC

PARAMETER SYMBOL DELTA LIMIT

7-1051

CD4085BMS

Schematic

FIGURE 1. CD408B SCHEMATIC DIAGRAM

VDD

ALL INPUTS PROTECTED BY

*CMOS PROTECTION NETWORK

VSS

INHIBIT 1 *

VDD

VSS

VDD

VSS

INHIBIT 2 *

VDD

VSS

TERM. 14 = VDD

TERM. 7 = VSS VDD

VSS

7-1052

CD4085BMS

Typical Performance Characteristics

FIGURE 2. TYPICAL VOLTAGE AND CURRENT TRANSFER

CHARACTERISTICS FIGURE 3. MINIMUM AND MAXIMUM VOLTAGE TRANSFER

CHARACTERISTICS

FIGURE 4. TYPICAL POWER DISSIPATION vs FREQUENCY FIGURE 5. TYPICAL DATA HIGH-TO-LOW LEVEL PROPAGA-

TION DELAY TIME vs LOAD CAPACITANCE

FIGURE 6. TYPICAL DATA LOW-TO-HIGH PROPAGATION

DELAY TIME vs LOAD CAPACITANCE FIGURE 7. TYPICAL DATA PROPAGATION DELAY TIME vs

SUPPLY VOLTAGE

VSS

VDD

DRAINCURRENT (ID) - mA

OUTPUT VOLTAGE (VO) - V

10V

CURRENT

PEAK

CURRENT

PEAK

151050 INPUT VOLTAGE (VI) - V

AMBIENT TEMPERATURE (TA) = +25oC

SUPPLY VOLT AGE (VDD) = 15V

OUTPUT VOLTAGE (VO) - V

0INPUT VOLTAGE (VI) - V

AMBIENT TEMPERATURE (TA) = +25oC

2.5 5 7.5 10 12.5 15 17.5 20 22.5

2.5

7.5

12.5

17.5

VSS

VDD

MAX

MIN

AMBIENT TEMPERATURE (TA) = +25oC

10V

SUPPLY VOLTAGE (VDD) = 15V

105

102

100

101

104

FREQUENCY (f) (kHz)

10-1 100102103104

103

101

POWER DISSIPATION (PD) (µW)

CL = 50pF

CL = 15pF

AMBIENT TEMPERATURE (TA) = +25oC

15V

10V

SUPPLY VOLTAGE (VDD) = 5V

300

250

200

150

100

0 20 40 60 80 100

LOAD CAPACITANCE (CL) (pF)

HIGH-TO-LOW LEVEL PROPAGATION

DELAY TIME (tPHL) (ns)

AMBIENT TEMPERATURE (TA) = +25oC

15V

10V

SUPPLY VOLTAGE (VDD) = 5V

0 20 40 60 80 100

LOAD CAPACITANCE (CL) (pF)

LOW-TO-HIGH LEVEL PROPAGATION

DELAY TIME (tPLH) (ns)

100

150

200

250

300

350

400

SUPPLY VOLTAGE (VDD) (V)

250

AMBIENT TEMPERATURE (TA) = +25oC

LOAD CAPACITANCE (CL) = 50pF

500

750

1000

1250

2.5 5 7.5 10 12.5 15 17.5 20

PROPAGATION DELAY TIME (tPHL, tPLH) (ns)

tPLH

tPHL

7-1053

CD4085BMS

FIGURE 8. TYPICAL OUTPUT LOW (SINK) CURRENT

CHARACTERISTICS FIGURE 9. MINIMUM OUTPUT LOW (SINK) CURRENT

CHARACTERISTICS

FIGURE 10. TYPICAL TRANSITION TIME vs LOAD

CAPACITANCE FIGURE 11. TYPICAL OUTPUT HIGH (SOURCE) CURRENT

CHARACTERISTICS

FIGURE 12. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS

Typical Performance Characteristics

(Continued)

10V

AMBIENT TEMPERATURE (TA) = +25oC

GATE-TO-SOURCE VOLT AGE (VGS) = 15V

0 5 10 15

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

10V

AMBIENT TEMPERATURE (TA) = +25oC

GATE-TO-SOURCE VOLT AGE (VGS) = 15V

0 5 10 15

7.5

5.0

2.5

10.0

12.5

15.0

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

AMBIENT TEMPERATURE (TA) = +25oC

LOAD CAPACITANCE (CL) (pF)

0 40 60 80 10020

100

150

200

SUPPLY VOLT AGE (VDD) = 5V

10V

15V

TRANSITION TIME (tTHL, tTLH) (ns)

-10V

-15V

AMBIENT TEMPERATURE (TA) = +25oC

GATE-TO-SOURCE VOLT AGE (VGS) = -5V

-5

-10

-15

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

-20

-25

-30

0-5-10-15

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

-10V

-15V

AMBIENT TEMPERATURE (TA) = +25oC0

-5

-10

-15

DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 0-5-10-15

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

GATE-TO-SOURCE VOLT AGE (VGS) = -5V

7-1054

CD4085BMS

Chip Dimensions and Pad Layout

Dimensions in parenthesis are in millimeters and are derived from

the basic inch dimensions as indicated. Grid graduations are in

mils (10-3 inch).

METALLIZATION: Thickness: 11kÅ−14kÅ, AL.

PASSIVATION: 10.4kÅ - 15.6kÅ, Silane

BOND PADS: 0.004 inches X 0.004 inches MIN

DIE THICKNESS: 0.0198 inches - 0.0218 inches