2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 -4 to -10 30 5 4 2N/PN/SST4392 -2 to -5 60 5 4 2N/PN/SST4393 -0.5 to -3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 4391<30 D Fast Switching--tON: 4 ns D High Off-Isolation: ID(off) with Low Leakage D Low Capacitance: < 3.5 pF D Low Insertion Loss D D D D D D D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Commutators DESCRIPTION The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. TO-206AA (TO-18) The 2N series hermetically-sealed TO-206AA (TO-18) can is available with processing per MIL-S-19500 (see Military Information). Both the PN, TO-226AA (TO-92), and SST, TO-236 (SOT-23), series are available in tape-and-reel for automated assembly (see Packaging Information). For similar dual products, see the 2N5564/5565/5566 data sheet. TO-226AA (TO-92) S D 1 S 2 1 TO-236 (SOT-23) D 3 S 2 3 D G 1 G 2 3 G and Case Top View Top View Top View 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 SST4391 (CA)* SST4392 (CB)* SST4393 (CC)* *Marking Code for TO-236 For applications information see AN104 and AN106 . Document Number: 70241 S-04028--Rev. F, 04-Jan-01 www.vishay.com 7-1 2N/PN/SST4391 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage: (2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . -40 V (SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . -35 V Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . -55 to 200 _C (PN/SST Prefixes) . . . . . . . . . . . -55 to 150 _C Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power Dissipation : Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix)a . . . . . . . . . . (TC = 25_C) 1800 mW (PN/SST Prefixes)b . . . . . . . . . . . . . . . 350 mW Notes a. Derate 10 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C (2N Prefix) . . . . . . . . . . . . . . . . . . -65 to 200 _C (PN/SST Prefixes) . . . . . . . . . . . -55 to 150 _C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 4391 Parameter Symbol Test Conditions Typa V(BR)GSS IG = -1 A, VDS = 0 V -55 Min -40 4392 Max Min 4393 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb VGS(off) IDSS VDS = 20 V 2N/PN: ID = 1 nA VDS = 15 V SST: ID = 10 nA VDS = 20 V, VGS = 0 V VGS = -20 V VDS = 0 V Gate Reverse Current Gate Operating Current IGSS IG ID(off) VDS = 20 V TA = 150_C VDS = 20 V TA = 100_C VDS = 10 V TA = 125_C Drain-Source On-Voltage VDS(on) VGS = 0 V -2 -5 -0.5 -3 50 150 25 75 5 30 50 150 25 100 5 60 SST 50 25 2N/SST -5 -100 -100 -100 PN -5 -1000 -1000 -1000 -13 -200 -200 -200 -1 -200 -200 -200 SST: TA = 125_C -3 5 2N: VGS = -7 V 5 5 PN: VGS = -5 V 0.005 PN: VGS = -7 V 0.005 PN: VGS = -12 V 0.005 1 5 100 2N: VGS = -5 V 13 2N: VGS = -7 V 13 2N: VGS = -12 V 13 PN: VGS = -5 V 1 PN: VGS = -7 V 1 PN: VGS = -12 V 1 SST: VGS = -10 V 3 ID = 3 mA 0.25 ID = 6 mA 0.3 ID = 12 mA 0.35 VGS(F) IG = 1 mA VDS = 0 V nA 100 2N 0.7 PN/SST 0.7 pA 100 2N: VGS = -12 V Gate-Source Forward Voltage pA -5 2N: VGS = -5 V VGS = 0 V, ID = 1 mA mA 5 2N: TA = 150_C rDS(on) 7-2 -10 PN: TA = 100_C Drain-Source On-Resistance www.vishay.com V -4 2N SST VDS = 10 V, VGS = -10 V Drain Cutoff Current -40 PN VDG = 15 V, ID = 10 mA VDS = 20 V -40 100 1 1 100 nA 100 pA 200 200 200 200 nA 200 200 0.4 0.4 V 0.4 30 60 100 1 1 1 V Document Number: 70241 S-04028--Rev. F, 04-Jan-01 2N/PN/SST4391 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 4391 Parameter Symbol Typa Test Conditions Min 4392 Max Min 4393 Max Min Max Unit Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs 6 mS 25 S VDS = 20 V, ID = 1 mA, f = 1 kHz gos rDS(on) Ciss Crss en VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 20 V, VGS = 0 V f = 1 MHz VDS = 0 V f = 1 MHz 30 60 100 2N 12 14 14 14 PN 12 16 16 16 SST 13 2N: VGS = -5 V 3.3 2N: VGS = -7 V 3.2 2N: VGS = -12 V 2.8 PN: VGS = -5 V 3.5 PN: VGS = -7 V 3.4 PN: VGS = -12 V 3.0 SST: VGS = -5 V 3.6 SST: VGS = -7 V 3.5 SST: VGS = -12 V 3.1 VDS = 10 V, ID = 10 mA f = 1 kHz 3.5 3.5 3.5 5 pF 5 5 nV Hz 3 Switching td(on) Turn-On Time tr td(off) Turn-Off Time tf VDD = 10 V VGS(H) = 0 V See Switching Circuit 2N/PN 2 SST 2 2N/PN 2 SST 2 2N/PN 6 SST 6 2N/PN 13 SST 13 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 s duty cycle v3%. Document Number: 70241 S-04028--Rev. F, 04-Jan-01 15 15 15 5 5 5 20 35 50 15 20 30 ns NCB www.vishay.com 7-3 2N/PN/SST4391 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 80 160 IDSS rDS 60 120 40 80 20 40 0 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 V IDSS @ VDS = 20 V, VGS = 0 V TA = 25_C 80 VGS(off) = -2 V 60 40 -4 V -8 V 20 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) 0 On-Resistance vs. Drain Current 100 200 IDSS - Saturation Drain Current (mA) rDS(on) - Drain-Source On-Resistance ( ) 100 -10 1 10 ID - Drain Current (mA) Turn-On Switching On-Resistance vs. Temperature 5 tr approximately independent of ID VDD = 5 V, RG = 50 W VGS(L) = -10 V ID = 1 mA rDS changes X 0.7%/_C 160 4 tr Switching Time (ns) rDS(on) - Drain-Source On-Resistance ( ) 200 120 VGS(off) = -2 V 80 -4 V -8 V 40 0 -55 -35 3 td(on) @ ID = 12 mA 2 td(on) @ ID = 3 mA 1 0 -15 5 65 25 45 TA - Temperature (_C) 85 105 0 125 Turn-Off Switching 30 -10 f = 1 MHz VDS = 0 V 24 18 Capacitance (pF) 24 Switching Time (ns) -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) Capacitance vs. Gate-Source Voltage 30 td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = -10 V VGS(off) = -2 V tf 12 18 12 td(off) Ciss 6 6 VGS(off) = -8 V Crss 0 0 0 www.vishay.com 7-4 100 2 4 6 ID - Drain Current (mA) 8 10 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 Document Number: 70241 S-04028--Rev. F, 04-Jan-01 2N/PN/SST4391 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Forward Transconductance and Output onductance vs. Gate-Source Cutoff Voltage* Noise Voltage vs. Frequency 100 50 500 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz Hz en - Noise Voltage nV / 10 ID = 1 mA ID = 10 mA 1 10 100 1k f - Frequency (Hz) 10 k 40 400 gfs 30 200 10 100 0 VDG = 10 V ID = 10 mA TA = 25_C ID = 10 mA 1 mA 10 pA 10 mA 0 10 1 mA 100 pA -10 gig big (mS) IG - Gate Leakage) 1 nA -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) 100 IGSS @ 125_C TA = 125_C -2 Common-Gate Input Admittance Gate Leakage Current 10 nA 200 20 0 100 k gos gos - Output Conductance (S) gfs - Forward Transconductance (mS) VDS = 10 V IGSS @ 25_C 1 TA = 25_C 1 pA IG(on) @ ID 0.1 pA 0.1 0 6 12 18 24 VDG - Drain-Gate Voltage (V) 100 30 Common-Gate Forward Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C bfg 1.0 10 (mS) gfg (mS) 1000 Common-Gate Reverse Admittance 10 VDG = 10 V ID = 10 mA TA = 25_C -gfg 200 500 f - Frequency (MHz) -brg -grg +grg 0.1 1 0.01 0.1 100 Document Number: 70241 S-04028--Rev. F, 04-Jan-01 200 500 f - Frequency (MHz) 1000 100 200 500 f - Frequency (MHz) 1000 www.vishay.com 7-5 2N/PN/SST4391 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transconductance vs. Drain Current Common-Gate Output Admittance 100 100 VGS(off) = -2 V gfs - Forward Transconductance (mS) VDG = 10 V ID = 10 mA TA = 25_C bog (mS) 10 gog 1 0.1 TA = -55_C 25_C 10 125_C 1 100 200 500 0.1 1000 1.0 10 ID - Drain Current (mA) f - Frequency (MHz) Output Characteristics Transfer Characteristics 100 100 VGS(off) = -4 V VGS(off) = -4 V VDS = 20 V 80 ID - Drain Current (mA) 80 ID - Drain Current (mA) VDS = 10 V f = 1 kHz VGS = 0 V 60 -0.5 V 40 -1.0 V -1.5 V 20 TA = -55_C 60 25_C 40 20 -2.0 V 125_C -2.5 V 0 0 0 2 4 6 10 8 0 -1 VDS - Drain-Source Voltage (V) -2 -3 -4 -5 VGS - Gate-Source Voltage (V) VDD RL SWITCHING TIME TEST CIRCUIT 4391 OUT 4392 4393 VGS(L) -12 V -7 V -5 V RL* 800 1600 3000 ID(on) 12 mA 6 mA 3 mA VGS(H) VGS(L) 1 k 51 *Non-inductive INPUT PULSE SAMPLING SCOPE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Rise Time 0.4 ns Input Resistance 10 M Input Capacitance 1.5 pF VIN Scope 51 See Typical Characteristics curves for changes. www.vishay.com 7-6 Document Number: 70241 S-04028--Rev. F, 04-Jan-01