Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
TM200RZ/EZ/GZ-M,-H,24,-2H
•IT (AV) Average on-state current .......... 200A
•IF (AV) Average forward current .......... 200A
•VRRM Repetitive peak reverse voltage
.......... 400/800/1200/1600V
•VDRM Repetitive peak off-state voltage
.......... 400/800/1200/1600V
•MIX DOUBLE ARMS
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
3–φ6.5
3–M8
A1K1A2K2
K1
G1
18 16 18 16
32 30
68.5
30
68.5
150
Tab#110, t=0.5
40
39
32
23
7
A1
CR K1
K2SR
A2
K1
G1
(RZ)
(EZ)
(GZ)
A1
CR
K1K2SR
A2
K1
G1
A1
CR K1K2
SR
A2
K1
G1
206
9
LABEL
(RZ Type)
(RZ Type)
(Bold line is connective bar.)
not Recommend
for New Design
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180° conduction, TC=67°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=125°C
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Ratings
310
200
4000
6.7 × 104
100
10
3.0
10
5.0
4.0
–40~125
–40~125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
—
—
Parameter
RMS current
Average current
Surge (non-repetitive) current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Limits
Symbol
IRRM
IDRM
VTM, VFM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tj=125°C, ITM=IFM=600A, instantaneous meas.
Tj=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, RL=2Ω
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
30
30
1.35
—
3.0
—
100
0.2
0.1
—
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
H
800
960
640
800
960
640
24
1200
1350
960
1200
1350
960
H
1600
1700
1280
1600
1700
1280
not Recommend
for New Design
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM VRSM VR (DC) VDRM
—
VDSM
—
VD (DC)
—
IT (RMS)
IF (RMS)
IT (AV)
IF (AV)
ITSM
IFSM
I2tdi/dt
—
Item
Thyristor
Diode
PGM
—
PG (AV)
—
VFGM
—
IFGM
—
TjTstg
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM IDRM
—
dv/dt
—
VGT
—
VGD
—
VTM
VFM
IGT
—
Rth (j-c)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
CURRENT
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
CURRENT (A)GATE VOLTAGE (V)
SURGE (NON-REPETITIVE)
CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V)
GATE CURRENT (mA) TIME (s)
Rth (c-f)
0
10
1
10
0
10
–1
10
–2
10
–3
10
1
10
0
10
1
10 2
10 4
10
3
10
–1
10
4
10
3
10
2
10
1
10
705030207532
0
500
4000
101 100
1000
1500
2000
2500
3000
3500
753275327532
3
2
7
5
3
2
7
5
3
2
4
7
5
4
VGT=3.0V
IGT=
100mA
IFGM=4.0A
PGM=10W
VFGM=10V
VGD=0.25V
PG(AV)=
3.0W
Tj=25°C
0.5
7
5
3
2
7
5
3
2
7
5
3
2
1.0 2.0 2.51.5
Tj=125°C
753275327532
0.25
0
7532
0.05
0.10
0.15
0.20
324
not Recommend
for New Design
Feb.1999
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE CURRENT (A)AVERAGE CURRENT (A)
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
AVERAGE CURRENT (A) AVERAGE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
00 32040
400
16080 120
50
100
150
200
250
300
350
200 240 280
θ=30°
60°
90°
θ
360°
270°
DC
120°
180°
30 0 32040
130
40
280120 200
80 160 240
50
60
70
80
90
100
110
120
180°
DCθ=30°
θ
360°
60° 270°
90°
120°
00 200
320
40
80
120
160
200
240
280
40 80 120 160
θ=30°
120°
90°
180°
θ
360°
60°
130
50 0 120 20040
60
70
80
90
100
110
120
80 160
θ=30° 60° 90°
θ
360°
180°120°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
not Recommend
for New Design
