MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H Average on-state current .......... 200A Average forward current .......... 200A Repetitive peak reverse voltage .......... 400/800/1200/1600V VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 no t fo Re rN c o ew m m De e n sig d n * IT (AV) * IF (AV) * VRRM * * * * (RZ Type) APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (RZ) 3-6.5 3-M8 A1 K1 K2 A2 CR K1 A2 40 20 A1 K2 SR K1 K2 SR K1 G1 16 30 18 32 68.5 16 30 68.5 (EZ) CR 150 A1 Tab#110, t=0.5 23 9 32 39 18 LABEL A2 CR A1 K1 K2 A2 SR (RZ Type) K1 G1 (GZ) 7 6 K1 G1 K1 G1 (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Voltage class M H 24 H Unit Repetitive peak reverse voltage 400 800 1200 1600 V Non-repetitive peak reverse voltage 480 960 1350 1700 V VR (DC) DC reverse voltage 320 640 960 1280 V VDRM Repetitive peak off-state voltage 400 800 1200 1600 V VDSM Non-repetitive peak off-state voltage 480 960 1350 1700 V VD (DC) DC off-state voltage 320 640 960 1280 V no t fo Re rN c o ew m m De e n sig d n VRRM VRSM Symbol Conditions Ratings Unit 310 A Single-phase, half-wave 180 conduction, TC=67C 200 A Surge (non-repetitive) current One half cycle at 60Hz, peak value 4000 A I2t I2t for fusing Value for one cycle of surge current 6.7 x 104 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125C 100 A/s PGM Peak gate power dissipation 10 W PG (AV) Average gate power dissipation 3.0 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 4.0 A Tj Junction temperature -40~125 C Tstg Storage temperature -40~125 C Viso Isolation voltage Parameter IT (RMS), IF (RMS) RMS current IT (AV), IF (AV) Average current ITSM, IFSM Charged part to case Main terminal screw M8 -- Mounting torque Mounting screw M6 -- Weight Typical value 2500 V 8.83~10.8 N*m 90~110 kg*cm 1.96~3.92 N*m 20~40 kg*cm 300 g ELECTRICAL CHARACTERISTICS Limits Symbol Test conditions Parameter Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125C, VRRM applied -- -- 30 mA IDRM Repetitive peak off-state current Tj=125C, VDRM applied -- -- 30 mA VTM, VFM Forward voltage Tj=125C, ITM=IFM=600A, instantaneous meas. -- -- 1.35 V dv/dt Critical rate of rise of off-state voltage Tj=125C, VD=2/3VDRM 500 -- -- V/s VGT Gate trigger voltage Tj=25C, VD=6V, RL=2 -- -- 3.0 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.25 -- -- V IGT Gate trigger current Tj=25C, VD=6V, RL=2 15 -- 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) -- -- 0.2 C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) -- -- 0.1 C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 -- -- M -- Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) -- -- -- Tj Tstg dv/dt VGT VGD IGT -- -- -- -- I2t di/dt Thyristor no t fo Re rN c o ew m m De e n sig d n Diode Item PGM PG (AV) VFGM IFGM -- -- -- -- -- Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM VTM IDRM VFM Rth (j-c) Rth (c-f) Thyristor -- Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 4000 3500 SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 4 7 Tj=125C 5 3 2 3000 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.5 RATED SURGE (NON-REPETITIVE) CURRENT 2500 2000 1500 1000 500 1.0 1.5 2.0 0 2.5 FORWARD VOLTAGE (V) GATE VOLTAGE (V) 7 5 3 2 PGM=10W VGT=3.0V Tj=25C 10 0 7 5 IGT= 100mA 3 2 PG(AV)= 3.0W 10 -1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) TRANSIENT THERMAL IMPEDANCE (C/W) VFGM=10V 10 1 2 3 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 1 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 4 5 7 10 1 2 3 0.25 0.20 0.15 0.10 0.05 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -12 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130 no t fo Re rN c o ew m m De e n sig d n AVERAGE POWER DISSIPATION (W) 320 240 200 180 120 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 160 90 60 =30 120 80 40 350 80 120 90 80 70 50 200 =30 0 120 160 200 LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) DC 270 180 150 100 50 130 120 360 110 100 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 90 80 70 60 50 =30 60 40 40 80 90 120 180 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 60 =30 0 40 60 AVERAGE CURRENT (A) RESISTIVE, INDUCTIVE 120 LOAD PER SINGLE 90 ELEMENT 200 0 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 AVERAGE CURRENT (A) 360 300 160 CASE TEMPERATURE (C) 0 400 250 360 110 60 40 0 AVERAGE POWER DISSIPATION (W) 120 360 CASE TEMPERATURE (C) 280 80 120 160 200 240 280 320 AVERAGE CURRENT (A) 30 0 40 120 90 180 270 DC 80 120 160 200 240 280 320 AVERAGE CURRENT (A) Feb.1999