5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A FEATURES * Package fully compatible with the industry standard INT-A-PAK power modules series * High thermal conductivity package, electrically insulated case * Excellent power volume ratio * 4000 VRMS isolating voltage * UL E78996 approved * Compliant to RoHS directive 2002/95/EC MTK * Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY IO A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. 55 A to 110 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL IO IFSM I2t CHARACTERISTICS 5.MT...K 9.MT...K 11.MT...K UNITS 55 90 110 A TC 85 85 85 C 50 Hz 390 950 1130 60 Hz 410 1000 1180 50 Hz 770 4525 6380 60 Hz 700 4130 5830 7700 45 250 63 800 A I2t A2s A2s VRRM Range 800 to 1600 V TStg, TJ Range - 40 to 125 C Document Number: 94353 Revision: 13-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 80 800 900 800 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 80 800 900 800 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 5.MT...K 9.MT...K 11.MT...K VRSM, MAXIMUM VDRM, MAXIMUM REPETITIVE IRRM/IDRM, NON-REPETITIVE PEAK PEAK OFF-STATE VOLTAGE, MAXIMUM REVERSE VOLTAGE GATE OPEN CIRCUIT AT TJ = 125 C V V mA 10 20 FORWARD CONDUCTION PARAMETER Maximum DC output current at case temperature SYMBOL IO TEST CONDITIONS 120 rect. conduction angle t = 10 ms Maximum peak, one-cycle forward, non-repetitive on state surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t 5.MT...K No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ maximum No voltage reapplied 100 % VRRM reapplied 9.MT...K 11.MT...K UNITS 55 90 110 A 85 85 85 C 390 950 1130 410 1000 1180 330 800 950 345 840 1000 770 4525 6380 700 4130 5830 540 3200 4510 500 2920 4120 t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 1.17 1.09 1.04 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ maximum 1.45 1.27 1.27 A2s A2s V Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 12.40 4.10 3.93 High level value on-state slope resistance rt2 (I > x IT(AV)), TJ maximum 11.04 3.59 3.37 2.68 1.65 1.57 m Maximum on-state voltage drop VTM Ipk = 150 A, TJ = 25 C, tp = 400 s single junction Maximum non-repetitve rate of rise of turned on current dI/dt TJ = 25 C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s 150 Maximum holding current IH TJ = 25 C, anode supply = 6 V, resistive load, gate open circuit 200 Maximum latching current IL TJ = 25 C, anode supply = 6 V, resistive load 400 www.vishay.com 2 A For technical questions, contact: indmodules@vishay.com V A/s mA Document Number: 94353 Revision: 13-Aug-08 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Three Phase Controlled Bridge Vishay High Power Products (Power Modules), 55 A to 110 A BLOCKING PARAMETER RMS isolation voltage Maximum critical rate of rise of off-state voltage SYMBOL TEST CONDITIONS VISOL TJ = 25 C all terminal shorted, f = 50 Hz, t = 1 s 4000 V TJ = TJ maximum, linear to 0.67 VDRM, gate open circuit 500 V/s dV/dt (1) 5.MT...K 9.MT...K 11.MT...K UNITS Note (1) Available with dV/dt = 1000 V/s, to complete code add S90 i. e. 113MT160KBS90 TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger TEST CONDITIONS 9.MT...K PGM 10 PG(AV) 2.5 TJ = TJ maximum IGM VGT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger IGD UNITS W A 10 TJ = - 40 C 4.0 TJ = 25 C 2.5 V 1.7 Anode supply = 6 V, resistive load TJ = - 40 C IGT 11.MT...K 2.5 - VGT TJ = 125 C Maximum required DC gate current to trigger 5.MT...K 270 TJ = 25 C 150 TJ = 125 C 80 mA 0.25 V 6 mA TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink per module Mounting torque 10 % to heatsink to terminal Approximate weight Document Number: 94353 Revision: 13-Aug-08 TEST CONDITIONS 5.MT...K TJ, TStg RthJC RthCS 9.MT...K 11.MT...K - 40 to 125 C DC operation per module 0.18 0.14 0.12 DC operation per junction 1.07 0.86 0.70 120 C rect. conduction angle per module 0.19 0.15 0.12 120 C rect. conduction angle per junction 1.17 0.91 0.74 Mounting surface smooth, flat and grased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. For technical questions, contact: indmodules@vishay.com UNITS K/W 0.03 4 to 6 3 to 4 225 Nm g www.vishay.com 3 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS 180 120 90 60 30 180 120 90 60 30 5.MT...K 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 9.MT...K 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100 11.MT...K 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082 K/W Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Instantaneous On-State Current (A) 130 Maximum Allowable Case Temperature (C) 5.MT..K Series 120 110 120 (Rect.) 100 + 90 ~ - 80 0 10 20 30 40 50 TJ = 25 C 10 5.MT..K Series Per junction 1 0 1 2 3 4 5 6 7 Instantaneous On-State Voltage (V) 94353_02 Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics 220 220 Maximum Total Power Loss (W) R - 20 K/ W 120 1.0 100 K/W .05 =0 40 W A 60 0.7 W W R thS 80 140 K/ K/ K/ W 100 160 0.5 /W 120 (Rect.) 120 3 4 K/ 140 0. 0. 2 160 200 180 0. 180 2K 5.MT..K Series TJ = 125 C 200 0.1 Maximum Total Power Loss (W) TJ = 125 C 100 60 Total Output Current (A) 94353_01 1000 K/W 1.5 K /W 80 60 40 20 0 0 0 5 94353_03a 0 10 15 20 25 30 35 40 45 50 55 Total Output Current (A) 94353_03b 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 3 - Total Power Loss Characteristics www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 94353 Revision: 13-Aug-08 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Three Phase Controlled Bridge Vishay High Power Products (Power Modules), 55 A to 110 A At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 300 250 200 5.MT..K Series Per junction 130 9.MT..K Series Maximum Allowable Case Temperature (C) Peak Half Sine Wave On-State Current (A) 350 120 100 + 90 80 1 10 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 350 300 250 200 5.MT..K Series Per junction 150 0.01 0.1 60 80 100 Fig. 6 - Current Ratings Characteristic 1000 100 TJ = 25 C TJ = 125 C 10 9.MT..K Series Per junction 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Total Output Current 94353_07 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics 300 K/ W 1.0 100 K/W R - 150 W 0.5 K/ 50 200 W W .05 100 0.4 K/ K/ =0 150 3 A 120 (Rect.) 2 0. R thS 200 0. 250 W K/ 250 12 9.MT..K Series TJ = 125 C 0. Maximum Total Power Loss (W) 300 Maximum Total Power Loss (W) 40 Total Output Current (A) 1 Pulse Train Duration (s) 94353_05 20 94353_06 Instantaneous On-State Current (A) Peak Half Sine Wave On-State Current (A) 400 0 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current 0.7 K/W K/W 1.5 K /W 50 0 0 0 94353_08a ~ - 150 94353_04 120 (Rect.) 110 10 20 30 40 50 60 70 Total Output Current (A) 80 0 90 94353_08b 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 8 - Total Power Loss Characteristics Document Number: 94353 Revision: 13-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A 850 750 11.MT..K Series Maximum Allowable Case Temperature (C) 800 Peak Half Sine Wave On-State Current (A) 130 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 700 650 600 550 500 9.MT..K Series Per junction 450 120 100 + 90 80 10 1 800 700 600 500 9.MT..K Series Per junction 400 300 0.01 0.1 20 40 60 80 100 120 Total Output Current (A) Fig. 11 - Current Ratings Characteristic 1000 100 TJ = 25 C TJ = 125 C 10 11.MT..K Series Per junction 1 0.5 1 Pulse Train Duration (s) 94353_10 0 94353_11 Instantaneous On-State Current (A) Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 900 Peak Half Sine Wave On-State Current (A) 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current 1000 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous On-State Voltage (V) 94353_12 Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 12 - Forward Voltage Drop Characteristics 350 350 Maximum Allowable Ambient Temperature (C) 50 0.5 150 W K/ W R - 100 200 K/ W /W 150 0.4 K/ 8K .05 200 2 0.3 =0 120 (Rect.) 0. 250 W K/ 250 300 A 300 R thS 11.MT..K Series TJ = 125 C 12 0. Maximum Total Power Loss (W) ~ - 400 94353_09 120 (Rect.) 110 K/W 0.7 K/W 1.0 K /W 100 50 1.5 K /W 0 0 0 10 20 30 40 50 60 70 80 90 100 110 94353_13a Total Output Current 0 94353_13b 25 50 75 100 125 Maximum Total Power Loss (W) Fig. 13 - Total Power Loss Characteristics www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 94353 Revision: 13-Aug-08 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Three Phase Controlled Bridge Vishay High Power Products (Power Modules), 55 A to 110 A 1000 800 700 600 500 1000 11.MT..K Series Per junction 94353_14 900 800 700 600 11.MT..K Series Per junction 500 400 1 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 1100 Peak Half Sine Wave On-State Current (A) 900 Peak Half Sine Wave On-State Current (A) 1200 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 10 400 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current 0.1 1.0 Pulse Train Duration (s) 94353_15 Fig. 15 - Maximum Non-Repetitive Surge Current ZthJC - Transient Thermal Impedance (K/W) 10 1 Steady state value RthJC = 1.07 K/W RthJC = 0.86 K/W RthJC = 0.70 K/W (DC operation) 5.MT..K Series 9.MT..K Series 11.MT..K Series 0.1 0.01 Per junction 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 94353_16 Fig. 16 - Thermal Impedance ZthJC Characteristics 1 (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 ; tr = 0.5 s, tp 6 s b) Recommended load line for 30 % rated dI/dt: 20 V, 65 tr = 1 s, tp 6 s IGD 94353_17 0.01 TJ = -40 C VGD TJ = 25 C 0.1 0.01 0.001 (a) (b) TJ = 125 C Instantaneous Gate Voltage (V) 10 (4) 5.MT...K, 9.MT...K, 11.MT...K Series 0.1 1 (3) (2) (1) Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94353 Revision: 13-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A ORDERING INFORMATION TABLE Device code 11 3 MT 160 1 2 3 4 1 - K S90 PbF 5 6 Current rating code: 5 = 55 A (average) 9 = 90 A (average) 11 = 110 A (average) 2 - Circuit configuration code: 1 = Negative half-controlled bridge 2 = Positive half-controlled bridge 3 = Full-controlled bridge 3 - Essential part number 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - Critical dV/dt: None = 500 V/s (standard value) S90 = 1000 V/s (special selection) 6 - PbF = Lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION A B C 6 1 2 4 A A B C 6 1 E C 3 5 D B F D 2 4 3 5 E F D E Full-controlled bridge Positive half-controlled bridge Negative half-controlled bridge (5.MT...K, 9.MT...K, 11.MT..K) (5.MT...K, 9.MT...K, 11.MT..K) (5.MT...K, 9.MT...K, 11.MT..K) F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 www.vishay.com/doc?95004 For technical questions, contact: indmodules@vishay.com Document Number: 94353 Revision: 13-Aug-08 Outline Dimensions Vishay Semiconductors MTK (with and without optional barrier) DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 8.5 0.5 (0.34 0.02) 30 0.5 (1.17 0.02) 24 0.5 (0.94 0.02) 38 0.5 (1.5 0.02) 25.5 0.5 (1.004 0.02) 28 1 (1.11 0.04) Screws M5 x 0.8 length 10 35 0.3 (1.38 0.01) 75 0.5 (2.95 0.02) A 2 3 4 B C 5 6 7 8 O 6.5 0.2 (O 0.26 0.01) 14 0.3 (0.55 0.01) 1 D 18 0.3 (0.71 0.01) 5 0.3 (0.2 0.01) F E 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) Document Number: 95004 Revision: 27-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions MTK (with and without optional barrier) Vishay Semiconductors DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 24 0.5 (0.94 0.02) 8.5 0.5 (0.34 0.02) 30 0.5 (1.17 0.02) 25.5 0.5 (1.004 0.02) 28 1 (1.11 0.04) Screws M5 x 0.8 length 10 35 0.3 (1.38 0.01) 75 0.5 (2.95 0.02) A 2 3 4 B C 5 6 7 8 O 6.5 0.2 (O 0.26 0.01) 14 0.3 (0.55 0.01) 1 D 18 0.3 (0.71 0.01) 5 0.3 (0.2 0.01) F E 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 95004 Revision: 27-Aug-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000