Logic-Level Power MOSFETs RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L N-Channel Logic Level Power Field-Effect Transistors (L? FET) 8 A, 180 V and 200 V lps(On): 0.5Q Features: B Design optimized for 5 volt gate drive @ Can be driven directly from Q-MOS, N-MOS, TTL Circuits = Compatible with automotive drive requirements @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance @ Majority carrier device RFM8N16L RFM8N20L The RFM8N18L and RFM8N20L and the RFP8N18L and RFP8N20L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated con-. duction at gate biases in the 3-5 voit range, thereby facilitat- RFPSN1a8L ing true on-off power control directly from logic circuit RFPSN20L supply voltages. The RFM-series types are supplied in the JEDEC TO- 204AA steel package and the RFP-series types in the wbes 1 JEDEC TO-220AB plastic package. The RFM and RFP series were formerly RCA developmental numbers TA9534 and TA9535. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): RFEM8N18L RFM8N20L DRAIN-SOURCE VOLTAGE ..........- 180 200 DRAIN-GATE VOLTAGE (Rgs= 1 MQ) 180 200 GATE-SOURCE VOLTAGE ........ DRAIN CURRENT, RMS Continuous Pulsed ............-- POWER DISSIPATION @ Tc=25C 75 75 Derate above T;.=25C 06 0.6 OPERATING AND STORAGE TEMPERATURE ...........-..266- Tj, Tstg 5-18 File Number 1514 2 2 $ 92CS-33741 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS SOURCE DRAIN (FLANGE) 92CS-37553 JEDEC TO-204AA SOURCE pt aon Eo care TOP VIEW 92Cs-39526 JEDEC TO-220AB +10 o -55 to +150 RFEPSN18L. RFP8N20L. 180 200 v 180 200 Vv Vv A A 60 60 w 0.48 0.48 wre onELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25 C unless otherwise specified. Logic-Level Power MOSFETs RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L LIMITS CHARACTERISTIC SYMBOL | conmiTIONS lla Reet | UNITS MIN. MAX. MIN. MAX. Drain-Source Breakdown Voltage BVops lot mA 180 _ 200 ~ Vv Gs Gate Threshold Voltage Ves(th) Ves=Vps 1 2 1 2 Vv lo=1 mA Zero Gate Voltage Drain Current loss Vos= 145 V _ 1 _ _ Vos= 160 V _ _ _ 1 To= 125C HA Vos= 145 V _ 50 Vos=160 V _ a _ 50 Gate-Source Leakage Current lass Vos 4 0 v _ 100 _ 100 nA Ds Drain-Source On Voltage Vos(on)* Ib=4 A - 2.0 2.0 Vos=5 Vv Vv 1p=8 A = 46 46 Ves=5 V Static Drain-Source On Resistance Tos(on)* lp=4 A _ 0.5 _ 0.5 Q Ves=5 V Forward Transconductance Qs" Vos= ; a Vv 3.0 _ 3.0 _ mho b= Input Capacitance Coss Vos=25 V = 900 _ 900 Output Capacitance Coss Ves=0 V = 250 = 250 pF Reverse-Transfer Capacitance Cras fEIMHz _ 120 120 Turn-On Delay Time ta(on) Von=50 V 15(typ) 45 15(typ) 45 Rise Time t bon4A 45(typ) 150 45(typ) 150 ns: Turn-Off Delay Time ta(off) Re26.25 0 100(typ) | 135 | 100(typ) | 135 Fall Time te Ves=5 V 60(typ) 105 60(typ) 105 Thermal Resistance R@sc RFM8N148L, _ 1.67 _- 1.67 \ Junction-to-Case RFM8N20L 5 h RFP8N18L, = 2.083 _ 2.083 | C/W | RFPBN20L *Pulsed: Pulse duration = 300 4s max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS CHARACTERISTIC SYMBOL | conmiSIONS Reet Reeencoe . LuNiTs MIN. MAX. MIN. MAX. Diode Forward Voltage Vsp ls0=4 A _ 1.4 - 14 Vv Reverse Recovery Time tre \r=4 A 250(typ) 250(typ) ns die/d.= 100 A/us Pulse Test: Width < 300 ys, duty cycle < 2%.Logic-Level Power MOSFETs RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L CASE TEMPERATURE (Tc) = 25 C (CURVES MUST BE DERATED 6 | LINEARLY WITH INCREASE 4 IN TEMPERATURE) Ip (MAX) CONTINUOUS REGION 1S LIMITED BY 200 V RFM8N20L, 4 6 8 2 4 68 2 4 6 8 1 10 100 1000 DRAIN-TO-SOURCE VOLTAGE - (Vos)- _ 92CM-37391Rt Fig. 1 Maximum safe operating areas for all types. Vps73V Ip* ima 90 50 100 160 CASE TEMPERATURE (Tc )C JUNCTION TEMPERATURE (Ty )C 9208-37504 92Cs-372 Fig. 2 Power vs. temperature derating curve for Fig. 3 Typical normalized gate threshold voltage as a function all types. of junction temperature for ail types. Ip-4A Vos" +5V PULSE TEST PULSE DURATION = 80y8 DUTY CYCLE s2% DRAIN CURRENT [Ip (onl]A To -40C JUNCTION TEMPERATURE (Ty }- C GATE~TO-- SOURCE VOLTAGE (Vgg)-V 9208-37220 92cs-37221 Fig. 4 Normalized drain-to-source on resistance to Fig. 5 Typical transfer characteristics for all types. junction temperature for all types. 5-20Logic-Level Power MOSFETs RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L 200 T T T T 8pss AL = 250 Ig (REF) = 0.45 ma Veg 5V 3 po = Voss. GATE Ypo = Voss SOURCE F VOLTAGE 4 Vpg Volts 0.75 Voss 9.78 Voss. 50 0.50 Vpgg 0.50 Vogs. r 0.25 Vogs 9.25 Vpss: 4 LJ DRAIN SOURCE VOLTAGE Ig (AEF) Ig (REF) 802 ig iach Ug (ACT) TIME Microseconds 20 s2cs-37680 Fig. 6 -Normalized switching waveforms for constant gate-current. Refer to RCA application notes AN-7254 and AN-7260. =5V TEST DURATION = 8Q,s DUTY CYCLE <2% < 2 DRAIN-TO-SOURCE RESISTANCE ORAIN CURRENT {Ip)-A 92CS-37224 Fig. 8 Typical drain-to-source on resistance as a function of drain current for all types. Vgg710V PULSE TEST PULSE DURATION = 60 us DUTY CYCLE < 2% DRAIN CURRENT (I))-A 9208-37226 Fi q of drain current for ail types. Vgg Volts . 10 Typical forward transconductance as a function PULSE TEST PULSE DURATION #8048 DUTY CYCLE < 2% CASE TEMPERATURE (To) =2 DRAIN CURRENT (Io) A 4 DRAIN-~TO- SOURCE VOLTAGE (Vpg )~V 92CS-37223 Fig. 7 Typical saturation characteristics for all types. ()=1 MHz u 2 4 w Q 2 < E Q = tt 3 oO lo 20 30 40 50 DRAIN -TO- SOURCE VOLTAGE (Vpg)V 92CS- 37225 Fig. 9 Capacitance as a function of drain-to-source voltage for all types. 252 (2.52 TO SCOPE = Yop = looVv KELVIN CONTACT 92CS~-37358 Fig. 11 - Switching Time Test Circuit. 5-21